Untitled
Abstract: No abstract text available
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 (5) 0.85 (4) 0~0.1 0.3∼0.6 0.7 0.16 (3)
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QSL12
2SD2675
RB461F
QSL12
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Untitled
Abstract: No abstract text available
Text: 2SD2675 Transistors General purpose amplification 30V, 1A 2SD2675 zExternal dimensions (Units : mm) zApplication Low frequency amplifier 2.8 Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO
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2SD2675
350mV
500mA
15with
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Untitled
Abstract: No abstract text available
Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
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US5L12
2SD2675
RB461F
85Max.
15Max.
US5L12
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Untitled
Abstract: No abstract text available
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver QSL12 ROHM : TSMT5 Structure
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QSL12
2SD2675
RB461F
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2SD2675
Abstract: No abstract text available
Text: 2SD2675 Transistors General purpose amplification 30V, 1A 2SD2675 zExternal dimensions (Units : mm) zApplication Low frequency amplifier 2.8 Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V VEBO 6 V IC 1 A ICP 2 A ∗1
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2SD2675
350mV
500mA
2SD2675
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diode in 5392
Abstract: 302 ROHM 558 npn 19 338 3951 2SD2675
Text: SPICE PARAMETER 2SD2675 by ROHM TR Div. * 2SD2675 NPN BJT model * Date: 2006/12/06 .MODEL 2SD2675 NPN + IS=400.00E-15 + BF=450.89 + VAF=30.003 + IKF=3.5392 + ISE=400.00E-15 + NE=1.5487 + BR=26.558 + VAR=100 + IKR=10.108 + ISC=1.8381E-12 + NC=1.3479 + NK=.95223
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2SD2675
Q2SD2675
00E-15
8381E-12
447E-12
345E-12
25E-12
6417E-9
diode in 5392
302 ROHM
558 npn
19 338
3951
2SD2675
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2SD2675
Abstract: No abstract text available
Text: 2SD2675 Transistors General purpose amplification 30V, 1A 2SD2675 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max.350mV At IC = 500mA / IB = 25mA
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2SD2675
350mV
500mA
50ipment
2SD2675
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2SD2675
Abstract: QSL12 RB461F
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 zStructure
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QSL12
2SD2675
RB461F
QSL12
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Untitled
Abstract: No abstract text available
Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. External dimensions (Unit : mm) (1) (5) 0.2 Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
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US5L12
2SD2675
RB461F
85Max.
15Max.
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Untitled
Abstract: No abstract text available
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 zStructure
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QSL12
2SD2675
RB461F
QSL12
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Untitled
Abstract: No abstract text available
Text: 2SD2675 Transistors General purpose amplification 30V, 1A 2SD2675 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max.350mV At IC = 500mA / IB = 25mA
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2SD2675
350mV
500mA
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Untitled
Abstract: No abstract text available
Text: 2SB1733 / 2SB1710 Datasheet PNP -1.0A -30V Middle Power Transistor lOutline Parameter Value TUMT3 -30V -1.0A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1710 SC-96 2SB1733 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2703, 2SD2675
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2SB1733
2SB1710
SC-96)
2SB1733
2SD2703,
2SD2675
-500mA/
-25mA)
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Untitled
Abstract: No abstract text available
Text: 2SD2675 Transistors General purpose amplification 30V, 1A 2SD2675 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 1.0MAX Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max.350mV At IC = 500mA / IB = 25mA
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2SD2675
350mV
500mA
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2SD2675
Abstract: QSL12 RB461F marking code L12
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 (5) 0.85 (4) 0~0.1 0.3∼0.6 0.7 0.16 (3)
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QSL12
2SD2675
RB461F
1000m
QSL12
marking code L12
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Untitled
Abstract: No abstract text available
Text: 2SD2703 / 2SD2675 Datasheet NPN 1.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 30V 1.0A Base Base Emitter Emitter 2SD2675 SC-96 2SD2703 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1733, 2SB1710
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2SD2703
2SD2675
SC-96)
2SD2703
2SB1733,
2SB1710
500mA/25mA)
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Untitled
Abstract: No abstract text available
Text: 2SD2703 / 2SD2675 Datasheet NPN 1.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 30V 1.0A Base Base Emitter Emitter 2SD2675 SC-96 2SD2703 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1733, 2SB1710
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2SD2703
2SD2675
SC-96)
2SD2703
2SB1733,
2SB1710
500mA/25mA)
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2SD2675
Abstract: RB461F US5L12
Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
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US5L12
2SD2675
RB461F
85Max.
15Max.
US5L12
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Untitled
Abstract: No abstract text available
Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
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US5L12
2SD2675
RB461F
85Max.
15Max.
US5L12
1000m
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great
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2008-Feb.
SC-75A
OT-416
50P5876E
pioneer mosfet audio amp ic
12V ENERGY LIGHT CIRCUIT DIAGRAM
vmn3 package
DTC143T datasheet
TRANSISTOR SMD catalog
Equivalent transistors for UMD2N
smd ya transistor
2SD2211
2SA1576UB
2SC6114
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2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.
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R0039A
52P6215E
2SC6144
IMD16A
potential divider
2SA1576UB
DTD513Z
MP6T3
2SCR514
2SA1514K equivalent
2SCR543
2SC6114
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mW
500mW
15Min.
85Max.
15Max.
2sc5922
2SC5734
2SC5917
2SC5989
2SA2054
2sc5919
2SC5987
2SC5734K
2SC5918
2SC5982
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