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    2SD215 Price and Stock

    ROHM Semiconductor 2SD2153T100W

    TRANS NPN 25V 2A MPT3
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    DigiKey 2SD2153T100W Cut Tape 4,251 1
    • 1 $1.02
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    2SD2153T100W Digi-Reel 4,251 1
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    2SD2153T100W Reel 3,894 1,000
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    Mouser Electronics 2SD2153T100W 1,138
    • 1 $0.51
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    ROHM Semiconductor 2SD2153T100U

    TRANS NPN 25V 2A MPT3
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    DigiKey 2SD2153T100U Cut Tape 685 1
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    2SD2153T100U Digi-Reel 685 1
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    2SD2153T100U Reel 1,000
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    Mouser Electronics 2SD2153T100U 166
    • 1 $0.62
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    ROHM Semiconductor 2SD2153T100V

    TRANS NPN 25V 2A MPT3
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    DigiKey 2SD2153T100V Cut Tape 45 1
    • 1 $1.39
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    2SD2153T100V Digi-Reel 45 1
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    2SD2153T100V Reel 1,000
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    Mouser Electronics 2SD2153T100V
    • 1 $1.23
    • 10 $0.797
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    Verical 2SD2153T100V 1,375 183
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    2SD2153T100V 1,336 19
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    Newark 2SD2153T100V Cut Tape 1
    • 1 $0.874
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    Quest Components 2SD2153T100V 1,100
    • 1 $1.11
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    • 100 $0.555
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    TME 2SD2153T100V 3
    • 1 -
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    • 100 $0.217
    • 1000 $0.182
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    Ameya Holding Limited 2SD2153T100V 80 1
    • 1 $0.7502
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    • 100 $0.44
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    Avnet Silica 2SD2153T100V 16 Weeks 1,000
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    Chip1Stop 2SD2153T100V Cut Tape 1,336
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    CoreStaff Co Ltd 2SD2153T100V 1,375
    • 1 $1.493
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    • 100 $0.274
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    Micro Commercial Components 2SD2150-R-TP

    TRANS NPN 20V 3A SOT89
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    DigiKey 2SD2150-R-TP Reel
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    ROHM Semiconductor 2SD2150T100R

    TRANS NPN 20V 3A MPT3
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    DigiKey 2SD2150T100R Cut Tape 1
    • 1 $0.84
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    2SD2150T100R Digi-Reel 1
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    2SD2150T100R Reel 1,000
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    Mouser Electronics 2SD2150T100R 438
    • 1 $0.87
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    Verical 2SD2150T100R 990 321
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    Quest Components 2SD2150T100R 846
    • 1 $0.635
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    2SD2150T100R 179
    • 1 $0.3309
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    • 100 $0.2206
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    TTI 2SD2150T100R Reel 1,000
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    CoreStaff Co Ltd 2SD2150T100R 990
    • 1 $0.351
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    • 100 $0.156
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    2SD2150T100R 68
    • 1 $0.351
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    • 100 $0.156
    • 1000 $0.127
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    Find more 2SD215 price and stock on Findchips.com

    2SD215 Datasheets (114)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD215 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD215 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD215 Unknown Cross Reference Datasheet Scan PDF
    2SD215 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD215 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD215 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD215 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD215 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2150 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN) Original PDF
    2SD2150 Kexin Low Frequency Transistor Original PDF
    2SD2150 ROHM Low Frequency Transistor (20V, 3A) Original PDF
    2SD2150 TY Semiconductor Low Frequency Transistor - SOT-89 Original PDF
    2SD2150 Weitron NPN Epitaxial Planar Transistors Original PDF
    2SD2150 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2150 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2150 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2150 ROHM Transistor Selection Guide Scan PDF
    2SD2150R ROHM Low Frequency Transistor (20V, 3A) Original PDF
    2SD2150-R-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD2150S ROHM Low Frequency Transistor (20V, 3A) Original PDF

    2SD215 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2153 SMD

    Abstract: DN marking 2SD2153 SMD Transistor DN sot-89 marking dn
    Text: Transistors SMD Type High Gain Amplifier Transistor 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1


    Original     		PDF 2SD2153 OT-89 -10mA, 100MHz 2SD2153 SMD DN marking 2SD2153 SMD Transistor DN sot-89 marking dn

    2SB1429

    Abstract: 2SD2155
    Text: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB1429 2SD2155 2SB1429 2SD2155

    2SD2151

    Abstract: No abstract text available
    Text: Power Transistors 2SD2151 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SD2151 2SD2151

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)


    Original     		PDF 2SD2150 2SC4115S 2SD2264 2SB1424 2SA1585S. 96-237-C74)

    2SD2153

    Abstract: T100 ROHM marking hFE ROHM marking hFE CODE
    Text: High gain amplifier transistor 25V, 2A 2SD2153 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5 (1) 0.5 3.0 1.5 0.4 1.0


    Original     		PDF 2SD2153 SC-62 R0039A 2SD2153 T100 ROHM marking hFE ROHM marking hFE CODE

    6551

    Abstract: 9848 2SD2150 300-24
    Text: SPICE PARAMETER 2SD2150 by ROHM TR Div. * 2SD2150 NPN BJT model * Date: 2006/12/14 .MODEL 2SD2150 NPN + IS=500.00E-15 + BF=300.24 + VAF=23.700 + IKF=13.956 + ISE=500.00E-15 + NE=1.6551 + BR=105.07 + VAR=100 + IKR=.75363 + ISC=1.9215E-9 + NC=2.1772 + NK=.97444


    Original     		PDF 2SD2150 Q2SD2150 00E-15 9215E-9 000E-3 704E-3 57E-12 136E-12 6551 9848 2SD2150 300-24

    Untitled

    Abstract: No abstract text available
    Text: 2SD2150Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SD2150Q

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage V VEBO 6 Collector Current - DC


    Original     		PDF 2SD2150U OT-89

    0-12v

    Abstract: 2SD2153 T100
    Text: 2SD2153 Transistors High gain amplifier transistor 25V, 2A 2SD2153 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5


    Original     		PDF 2SD2153 SC-62 0-12v 2SD2153 T100

    2SB1424

    Abstract: 2SD2150 T100
    Text: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1


    Original     		PDF 2SD2150 2SB1424. SC-62 2SB1424 2SD2150 T100

    smd transistor marking cf

    Abstract: CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF
    Text: Transistors SMD Type Low Frequency Transistor 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.


    Original     		PDF 2SD2150 OT-89 100MHz smd transistor marking cf CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2156, 2SD2156A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 0.7±0.1 10.0±0.2 2.7±0.2 Parameter TC=25˚C Symbol Collector to 2SD2156 base voltage 2SD2156A Collector to


    Original     		PDF 2SD2156, 2SD2156A 2SD2156 2SD2156A 2SD2156

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2158, 2SD2158A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio • Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with


    Original     		PDF 2SD2158, 2SD2158A 2SD2158 2SD2158A

    2SD2150

    Abstract: No abstract text available
    Text: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6


    Original     		PDF 2SD2150 OT-89 15-Aug-05 OT-89 500TYP 2SD2150

    2SD2156

    Abstract: 2SD215 2SD2156A
    Text: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features Package Dimensions Power Amplifier h FE , • High DC c u rre n t gain (Iife) (Iife ) • “Full Pack” package for simplified m ounting on a heat sink with one


    OCR Scan     		PDF 2SD215Ã 2SD2156A 2SD2156, 2SD2156 2SD215 2SD2156A

    Untitled

    Abstract: No abstract text available
    Text: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SD2155 2SB1429 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­


    OCR Scan     		PDF 2SD2150/2SC4115S/2SD2264 96-237-C74) 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    Transistor MARKING CODE AW SOT89

    Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
    Text: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,


    OCR Scan     		PDF 2SD2153 OT-89, SC-62) 2SD2153; 00mfl70 G014fl71 Transistor MARKING CODE AW SOT89 Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62

    Untitled

    Abstract: No abstract text available
    Text: h ~7 > V 7 . $ /Transistors 2 S 2 D 1 5 2SD2150 1 * S yT J t f l s - i - B NPN y V 3 > Nÿ >y Epitaxial Planar NPN Silicon Transistor 1ì£^ J&^^iSi|Ìffl/Low Freq. Power Amp. 5 T -7 fi\r/D im e n s io n s Unit : mm) 1 ) VcE(sat) V c E (s a t)= 0 .5 V (M ax.)


    OCR Scan     		PDF 2SD2150 SC-62

    2SD2158

    Abstract: 2SD2158A
    Text: 2SD2158, 2SD2158A Power Transistors 2SD 2158, 2SD 2158A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain Package Dim ensions Power A m plifier Ii f e , • Features U n it 1 mm 4 .4 m a x . 10.2max. 5.7max. • H igh D C c u r r e n t gain (h FE)


    OCR Scan     		PDF 2SD2158, 2SD2158A 2SD2158 2SD2158A

    Untitled

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C


    OCR Scan     		PDF ZSB14Z9 2SD2155 Ta-25 VCB--180V, -50mA, VCB--10V, 2SB1429

    2SB1429

    Abstract: No abstract text available
    Text: 2SB1429 SILICON PNP TRIPLE DIFFUSED TYPE POWER A MPL I F I E R APPLICATIONS. Unit in m m 20.5MAX . C omplementary to 2SD2155 # 3 .3 ±0.2 . R ecommend for 100W H i g h Fiderity A udio F requency Ampl i f i e r Output Stage. 2.5 3.0 +2.5 1 .0 -0 .2 5 MA XI M U M RATINGS Ta~25°C


    OCR Scan     		PDF 2SB1429 2SD2155 2SB1429

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFE , Power Amplifier U n it I m m 4 .4 m a x . 1 0 .2 m a x . • Features 5 .7 m a x . • H ig h D C c u r r e n t g a in ( h FE)


    OCR Scan     		PDF 2SD215Ã 2SD2156A 2SD2156,

    Untitled

    Abstract: No abstract text available
    Text: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .


    OCR Scan     		PDF 2SB1427 2SD2153 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.