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    2SD1766 Search Results

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    2SD1766 Price and Stock

    Micro Commercial Components 2SD1766-R-TP

    TRANSISTOR NPN SOT-89
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    ROHM Semiconductor 2SD1766T100P

    TRANS NPN 32V 2A MPT3
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    ROHM Semiconductor 2SD1766T100Q

    TRANS NPN 32V 2A MPT3
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    2SD1766T100Q Digi-Reel 1
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    Chip1Stop 2SD1766T100Q Cut Tape 3
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    ROHM Semiconductor 2SD1766T100R

    TRANS NPN 32V 2A MPT3
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    2SD1766T100R Reel 1,000
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    2SD1766T100R Digi-Reel 1
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    Mouser Electronics 2SD1766T100R
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    Win Source Electronics 2SD1766T100R 95,000
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    ROHM Semiconductor 2SD1766

    2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SD1766 241
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    2SD1766 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1766 Kexin Medium Power Transistor Original PDF
    2SD1766 ROHM Medium Power Transistor (32V, 2A) Original PDF
    2SD1766 ROHM Medium power transistor Original PDF
    2SD1766 ROHM Medium Power Transistor (32V, 2A) Original PDF
    2SD1766 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
    2SD1766 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1766 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1766 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1766 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1766 ROHM Transistor Selection Guide Scan PDF
    2SD1766 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1766T100P ROHM TRANS DVR NPN 32V 2A SOT-89 TR Original PDF
    2SD1766T100Q ROHM TRANS NPN 32V 2A SOT-89 Original PDF
    2SD1766T100Q ROHM Medium Power Transistor (32 V, 2 A) Original PDF
    2SD1766T100R ROHM TRANS NPN 32V 2A SOT-89 Original PDF

    2SD1766 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


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    PDF 2SD1766-die 2SB1188-die

    2SD1862

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SD1862 2SB1240 2SB1182 T100

    2SD1758

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 65Max. 2SB1240 2SB1182 2SB1188 2SD1862 T100

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original
    PDF 2SD1766-dies

    SMD TRANSISTOR MARKING 2A

    Abstract: 2SD1766
    Text: Transistors SMD Type Medium Power Transistor 2SD1766 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 Low VCE sat , VCE(sat) = 0.5V (typical) +0.1 0.80-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1


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    PDF 2SD1766 OT-89 -500mA, 100MHz SMD TRANSISTOR MARKING 2A 2SD1766

    Untitled

    Abstract: No abstract text available
    Text: 2SD1766 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — — 2.6 4.25 2.4 3.75 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF 2SD1766 OT-89 OT-89 2SB1188 500mA 100MHz

    736 33

    Abstract: 8069 2SD1766
    Text: SPICE PARAMETER 2SD1766 by ROHM TR Div. * 2SD1766 NPN BJT model * Date: 2006/12/04 .MODEL 2SD1766 NPN + IS=600.00E-15 + BF=185.52 + VAF=33.033 + IKF=10 + ISE=600.00E-15 + NE=1.8069 + BR=73.093 + VAR=100 + IKR=75.250E-3 + ISC=3.4894E-12 + NC=1.2296 + NK=.43296


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    PDF 2SD1766 Q2SD1766 00E-15 250E-3 4894E-12 000E-3 891E-3 88E-12 736 33 8069 2SD1766

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR PNP SOT-89-3L FEATURES 1. BASE 2. COLLECTOR 1 z Low VCE(sat). z Complements the 2SD1766 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-89-3L 2SB1188 OT-89-3L 2SD1766 30MHz

    PNP 200V 2A SOT89

    Abstract: cj sot 89
    Text: 2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP FEATURES z Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) z Complements the 2SD1766 z Weight: 0.05 g z RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"


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    PDF OT-89 2SB1188 2SD1766 060TYP M140-MH FM150-MH FM160-MH FM180-M FM1100-MH PNP 200V 2A SOT89 cj sot 89

    2SD1766

    Abstract: No abstract text available
    Text: 2SB1188 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B 2.6 4.25 2.4 3.75 Features 0.8 MIN — Low VCE(sat). — 0.44 0.37 Complements the 2SD1766 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


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    PDF 2SB1188 OT-89 OT-89 2SD1766 30MHz 2SD1766

    2SB1182

    Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100 302 ROHM
    Text: Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 Dimensions (Unit : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.9 2.3±0.2 3.0±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 0.65±0.1 0.75 2.3+0.2 −0.1


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SB1182 2SB1240 R0039A 2SB1240 2SD1862 T100 302 ROHM

    Untitled

    Abstract: No abstract text available
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SB1188 2SB1182 2SB1240 2SD1766

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


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    PDF 2SD1766-die 2SB1188-die

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1766 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 Low VCE sat , VCE(sat) = 0.5V (typical) +0.1 0.80-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1


    Original
    PDF 2SD1766 OT-89 -500mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1766 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-89-3L 2SD1766 OT-89-3L 2SB1188 500mA 100MHz

    npn 200V 0.2A SOT89

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN process design, excellent power dissipation offers


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    PDF OT-89 OD-123+ 060TYP 118TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH npn 200V 0.2A SOT89

    2SD1766

    Abstract: No abstract text available
    Text: 2SD1766 2SD1766 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


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    PDF 2SD1766 OT-89 500mA 100MHz 2SD1766

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1766 Features • • • 2.0Amp Medium Power Transistor 32 Volts Low VCE sat : VCE(sat) =0.5V(Typ.)(IC/IB=2.0A/0.2A) Complements the 2SB1188


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    PDF 2SD1766 2SB1188 OT-89 2SD1862)

    TRANSISTOR BI 237

    Abstract: NPN/TRANSISTOR BI 237
    Text: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for


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    PDF 2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237

    2SD1766

    Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1


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    PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M SC-62 2SD1766 2SD1758 2SD1766) 2SD1758) 2SD1862, 2SD1227M) 2SD1189F) 2SD1766 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055

    2SD1766

    Abstract: No abstract text available
    Text: / T ransistors 2SD1766 2SD1766 X t ° ^ '> 7 ; U 7 V - ^ N P N Epitaxial Planar NPN Silicon Transistor 4 ,^ ^ * l lliffl/M edium Power Amp. • W f^ iS E I/D im e n s io n s Unit : mm Pc = 2 W T * 5 ( 4 0 X 1) 5y 0 40X0.7mm '•s-;:1 2) VcE(sat) VCE(sat)=0.16V (Typ.)


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    PDF 2SD1766 2SB1188 40X40X0 SC-62 2SD1766

    2SD1189F

    Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1


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    PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 2SB822/ 2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SB822 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000

    2SD1189F

    Abstract: 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M
    Text: Transistors Medium Power Transistor 32V, 2A 2 S D 1 7 6 6 /2 S D 1 7 5 8 /2 S D 1 8 6 2 /2 S D 1 1 8 9 F / 2 S D 1 0 5 5 /2 S D 1 9 1 9 /2 S D 1 2 2 7 M •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0.16V (Typ.) 2SD1766


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    PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 891F/2SB822/2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SD1766 2SD1189F 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M

    2SD1766

    Abstract: No abstract text available
    Text: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x


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    PDF 2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 2SD1766