2SC5212 Search Results

2SC5212 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5212		Isahaya Electronics	FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE		Original	PDF
2SC5212		Kexin	Small Signal Transistor		Original	PDF
2SC5212		TY Semiconductor	Small Signal Transistor - SOT-89		Original	PDF
2SC5212		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF

2SC5212 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25	Original	PDF	2SC5212 180MHz 100mA 500mA -10mA
2SC5212 Abstract: marking ue hFE CLASSIFICATION Marking Text: Transistors SMD Type Small Signal Transistor 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25	Original	PDF	2SC5212 180MHz 100mA 500mA -10mA 2SC5212 marking ue hFE CLASSIFICATION Marking
marking CODE n3 6PIN Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 Text: ２０１０年３月版 Sales Guide セールスガイド小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2	Original	PDF	2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
marking symbol ER transistor Abstract: "marking h" sc-62 Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC5212 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2 S C 5 2 1 2 is a resin seated silicon N P N epitaxial type transistor. It designed with high collector current and small VcE sat).	OCR Scan	PDF	2SC5212 2SC5212 2SA1946. SC-62 marking symbol ER transistor "marking h" sc-62
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266
2SC3928A Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989 Text: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100	OCR Scan	PDF
2SC5212 Abstract: No abstract text available Text: MITSUBISHI SEM ICONDUCTO R SM A LL-SIG N A L T RA NSISTO R 2SA1946 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1946 is a resin sealed silicon PNP epitaxial type transistor. It is designed with high collector current and small VcE(sat).	OCR Scan	PDF	2SA1946 2SA1946 2SC5212. 180MHz 2SC5212