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    2SC2562 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2562 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2562 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2562 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2562 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2562 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2562 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2562 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2562 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC2562 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2562 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2562 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2562 Unknown Cross Reference Datasheet Scan PDF
    2SC2562 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2562 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2562 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2562 Toshiba Integrated Circuits for TV Systems Scan PDF
    2SC2562 Toshiba Toshiba Shortform Catalog Scan PDF
    2SC2562-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2562-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC2562 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sa1012

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220


    Original     		PDF 2SA1012 2SC2562 O-220 2SA1012L 2SA1012-TA3-T 2SA1012L-TA3-T O-220 QW-R209-008 2sa1012

    2SA1012

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER


    Original     		PDF 2SA1012 2SC2562 O-251 QW-R213-012 2SA1012

    2sc2562

    Abstract: 2SA1012
    Text: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		PDF 2SC2562 O-220 2SA1012 O-220) 2sc2562 2SA1012

    KELTRON

    Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507


    Original     		PDF 1000n 127var 220AB 220AB 20var KELTRON b0949 B0539 sot6001 2SC2516M B0123 2n5978

    2sc2562

    Abstract: 2SA1012
    Text: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage


    Original     		PDF 2SA1012 O-220 2SC2562 O-220 -10mA 2sc2562 2SA1012

    2SA1012

    Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.


    Original     		PDF 2SA1012 2SC2562 2SA1012 transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor

    2SA1012

    Abstract: 2sc2562
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . „ FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0 s(Typ.) *Complementary To 2SC2562 „ ORDERING INFORMATION


    Original     		PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R 2SA1012 2sc2562

    2SA1012

    Abstract: 50V 1A PNP power transistor
    Text: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features — 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562


    Original     		PDF 2SA1012 O-220 O-220 2SC2562 tp300S, -100A, 150mA 50V 1A PNP power transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION .  FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0s(Typ.) *Complementary To 2SC2562  ORDERING INFORMATION


    Original     		PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R

    2N1152

    Abstract: 2N1149 2N1150 2N1151 2N1265 2N1193 2N1212 RCA 2n1184a 2N1247 2N1264
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507


    Original     		PDF

    2sc2562

    Abstract: 2SA1012 2SA1012 jmnic
    Text: JMnic Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2SC2562 O-220 2SA1012 O-220) 2sc2562 2SA1012 2SA1012 jmnic

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION .  FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0s(Typ.) *Complementary To 2SC2562  ORDERING INFORMATION


    Original     		PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T O-220 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T O-220F 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T

    2SA1012

    Abstract: 2SA1012L 2sc2562 transistor 2sA1012
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION 1 TO- 251 . FEATURES 1 TO-252 *Low collector saturation voltage VCE SAT =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562


    Original     		PDF 2SA1012 O-252 2SC2562 O-220 O-220F 2SA1012L 2SA1012-x-TA3-T 2SA1012L-x-TA3-T 2SA1012-x-TF3-T 2SA1012L-x-TF3-T 2SA1012 2SA1012L 2sc2562 transistor 2sA1012

    transistor 2sA1012

    Abstract: 2sa1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . „ FEATURES *Low collector saturation voltage VCE SAT =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 *Pb-free plating product number: 2SA1012L


    Original     		PDF 2SA1012 2SC2562 2SA1012L 2SA1012-x-TA3-T 2SA1012L-x-TA3-T 2SA1012-x-TF3-T 2SA1012L-x-TF3-T 2SA1012-x-TM3-T 2SA1012L-x-TM3-T 2SA1012-x-TN3-R transistor 2sA1012 2sa1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A

    2SC2562

    Abstract: 2SA1012
    Text: Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING


    Original     		PDF 2SC2562 O-220 2SA1012 O-220) 2SC2562 2SA1012

    2SA1012

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER


    Original     		PDF 2SA1012 2SC2562 O-252 QW-R209-008 2SA1012

    Untitled

    Abstract: No abstract text available
    Text: 2SC2562 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240


    Original     		PDF 2SC2562 Freq120M StyleTO-220AB

    2SC2562

    Abstract: 2SC2562 Toshiba
    Text: 2SC2562 SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in m m HIGH CURRENT SW IT C H IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic= 3A ) High Speed Switching Time : tgtg=1.0,us (Typ.)


    OCR Scan     		PDF 2SC2562 2SA1012. O-220AB SC-46 2-10A1A 2SC2562 2SC2562 Toshiba

    Untitled

    Abstract: No abstract text available
    Text: ~5h TOSHIBA { D IS CR ETE/O PT O} 9097250 TOSHIBA <DISCRETE/OPTO 2SC2562 DE I T D T T E S D □ □ □ 7 S S Eì fl | ' L)7 - 3 ¿ - o f J7559 SILICON NPN EPITAXIA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2SC2562 J7559 2SA1012.

    2SC2562

    Abstract: 2SC2562 Toshiba
    Text: 2SC2562 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1D.3MAX. FEATURES: 0 3-6±0.3 • Low Collector Saturation Voltage : vCE sat =0-4v (Max-) (at IC=3A) • High Speed Switching Time : ts tg=1.0iJS (Typ.)


    OCR Scan     		PDF 2SC2562 2SA1012. -55vL50 12CK240 7CH140, 2SC2562 2SC2562 Toshiba

    2SC2625

    Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
    Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)


    OCR Scan     		PDF 01l3Tc 2SC2556 2SC2556A 2SC2558-KA 800MHz 2SC2558-MA 2SC2559-KA 2SC2559-MA 2SC2625 2SC2559 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C

    nec 2401

    Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
    Text: - tt - 2SC 2388A 2SC 2389 ^ 2SC 2 3 9 0 ^ 2SC 2391 2SC 2392 s a *±a □— A □— A 2SC3040 2SC2Û75 2SD743 £ 2SC2562 2SC2634 2SD812 2SC1645 2SC3802K 2SC2619 2SC3124 2SC2755 2SC2812 2SC3324 2SC1622A 2SC2462 2SC241 2 K L N 2SC2312 2SC3324 2SC1622A 2SC2463


    OCR Scan     		PDF 2SC2387 2SC3040 2SC2740 2SC2631 2SC2634 2SC2139 2SC2362K 2SC2362 2SC2286-KA 2SC2380 nec 2401 nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508

    2SC2562

    Abstract: 2SC2562 Toshiba 2SA1012 AC75 K240
    Text: ~5b TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DI S C R E T E / O P T O 2SC2562 DE 1 ^ 0 ^ 7 2 5 0 □ □□755E1 A | ‘ O j -•3 3 , 0 ^ J7559 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF J7559 2SC2562 2SA1012. 11I1II 2SC2562 Toshiba 2SA1012 AC75 K240

    2SC2534

    Abstract: 2SC3558
    Text: m —3 Application * M AX. Atr O •O IC v CEO Type No. 2SC3558 2SC2562 2SA1012 2SC3258 2SA1293 2SD553 2SB553 2SD843 2SB753 2SC3257 SWITCHING REG. 2SA1328 2SC3346 2SA1329 2SC36Z5 A 0.6 2 0.2 f=1MHz VCB tön tstg tf (MHz) CV) (A) (pF) (V) (ms) (ß s) (ms)


    OCR Scan     		PDF 2SA1012 2SA1293 2SB553 2SB753 2SA1328 2SA1329 20MIN. 10MIN. 2SC2534 2SC3558