2SC1358
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING See Fig.2
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2SC1358
2SC1358
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1359 TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for RF Amplification of FM/AM Radios. z High Transition Frequency fT. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SC1359
200MHz
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2SC1359 C
Abstract: ic CD4081 pin diagram datasheet 2SA733 2SC1359
Text: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be
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2SC1359
2SA733
100mA,
2SC1359 C
ic CD4081 pin diagram datasheet
2SC1359
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2SC1359 C
Abstract: 2SC1359
Text: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC1359
2SC1359 C
2SC1359
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2SC1359 C
Abstract: 2SA0838 2SC1359
Text: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current
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2SC1359
2SA0838
2SC1359 C
2SA0838
2SC1359
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 M Di ain sc te on na
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2SC1359
2SA0838
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2SA838
Abstract: 2SA0838 2SC1359
Text: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C
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2SA0838
2SA838)
2SC1359
2SA838
2SA0838
2SC1359
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Untitled
Abstract: No abstract text available
Text: 2SC1353 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)90 I(C) Max. (A)700m Absolute Max. Power Diss. (W)650m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1353
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2SC1359
Abstract: 2SC1359 C 2SA838
Text: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm • Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings Ta=25˚C Parameter
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2SC1359
2SA838
100MHz
2SC1359
2SC1359 C
2SA838
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2SA838
Abstract: 2SA838 TRANSISTOR equivalent TRANSISTOR 2sa838 2SC1359 2SC135
Text: Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA838
2SC1359
2SA838
2SA838 TRANSISTOR equivalent
TRANSISTOR 2sa838
2SC1359
2SC135
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2SC1358
Abstract: 1400v npn
Text: Inchange Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING See Fig.2
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2SC1358
2SC1358
1400v npn
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2SA838
Abstract: 2SC1359
Text: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5
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2SC1359
2SA838
2SA838
2SC1359
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Untitled
Abstract: No abstract text available
Text: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1
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2SA0838
2SA838)
2SC1359
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Untitled
Abstract: No abstract text available
Text: 2SC1354 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1354
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2SA838
Abstract: 2SA0838 2SC1359
Text: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)
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2SA0838
2SA838)
2SC1359
2SA838
2SA0838
2SC1359
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2SA838
Abstract: 2SA0838 2SC1359
Text: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA0838 2SA838 Unit: mm 5.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. • Absolute Maximum Ratings (Ta=25˚C) Parameter
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2SC1359
2SA0838
2SA838)
2SA838
2SA0838
2SC1359
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2SA838
Abstract: 2SA0838 2SC1359
Text: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 • High transfer ratio fT 0.7±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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2SA0838
2SA838)
2SC1359
2SA838
2SA0838
2SC1359
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Untitled
Abstract: No abstract text available
Text: 2SC1359 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.220 h(FE) Max. Current gain.
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2SC1359
Freq300M
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2SC1359
Abstract: 2SC1359 C
Text: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC1359
2SC1359
2SC1359 C
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2SC1358
Abstract: TRANSISTOR HORIZONTAL NPN Transistor VCEO 1000V 2SC1520 fbt tv NPN Transistor VCEO 30A 1000V C14A triple pulse transformer horizontal transistor
Text: '> y =3 > / \ ° 7 Silicon P o w e r Transistor 2SC1358 NPN = M ÎÉ iM H t S v U 3 > h 7 > v X ^ ^3 ^ “ i r U fcfTM FUjlÉJiii^ïÆ NPN Silicon Triple Diffused Transistor Horizontal Deflection Output for Color TV 0 2 0 -i y f - 90° # ^ — r ^ O u t l i n e U n i t ! mm
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2SC1358
75kHz
O2SC1507
02SC1358
Pw-25/
2SC1520
100mA
2SC1358
TRANSISTOR HORIZONTAL
NPN Transistor VCEO 1000V
fbt tv
NPN Transistor VCEO 30A 1000V
C14A
triple pulse transformer
horizontal transistor
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2SC137
Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Text: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135
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2SC27
2SC130
2SC131
2SC132
2SC134
2SC135
2SC136
30MHz
T0-92ff5
2SC387AGTM
2SC137
2SC306
2SC138
2sc230
2SC458LG C
2SC130
2SC387AGTM
2SC238
2SC309
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NPN Transistor VCEO 1000V
Abstract: No abstract text available
Text: 2SC1358 NPN POWER TRANSISTOR Colour TV Horizontal Output Applications j* — B ——j o-JU UJ cc < if z O C/5 Z ÜJ 5 DIM A B C D E F G H J K L M MtN - - 6,35 0,96 - 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15
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2SC1358
NPN Transistor VCEO 1000V
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2sc1424
Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A
Text: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH
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2SC1318A
2SC1324
2SC1326
2SC1336
2SC1342
2SC1343H
2SC1344
2SC1345
500MHz
2SC1424
2sc1424
SC-5-1
2SC1457
2SC1507
2SC1324
2SC1345K
2SC1326
2SC1449
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2SC1507
Abstract: MS1B
Text: SEC SILICON POWER TRANSISTOR EUCTIUN DEVICE 2SC1358 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV NPN SILICON TRIPLE DIFFUSED MESA TRANSISTOR PACKAGE DIMENSIONS {Unit : mm 4,22.22MAX. • Suitable for Horizontal Deflection Output Applications o f 20", 90° Color TV Receivers.
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2SC1358
22MAX.
75kHz
25/uS
2SC1507
MS1B
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