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    2SB60 Search Results

    2SB60 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SB601-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SB605-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SB605-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SB60 Price and Stock

    Taiwan Semiconductor D2SB60H

    2A, 600V, STANDARD BRIDGE RECTIF
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    DigiKey D2SB60H Tube 1,200 1
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    • 1000 $0.31742
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    Avnet Americas D2SB60H Tube 1,200
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    Mouser Electronics D2SB60H
    • 1 $0.7
    • 10 $0.611
    • 100 $0.423
    • 1000 $0.302
    • 10000 $0.235
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    Taiwan Semiconductor D2SB60

    BRIDGE RECT 1PHASE 600V 2A GBL
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    DigiKey D2SB60 Tube 870 1
    • 1 $0.87
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    • 10000 $0.233
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    Avnet Americas D2SB60 Tube 6 Weeks 1,200
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    Mouser Electronics D2SB60
    • 1 $0.7
    • 10 $0.611
    • 100 $0.423
    • 1000 $0.353
    • 10000 $0.254
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    EBV Elektronik D2SB60 8 Weeks 1,200
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    Schaffner FN9222SB-6-06

    PWR ENT RCPT IEC320-C14 PANEL QC
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    DigiKey FN9222SB-6-06 Tray 145 1
    • 1 $10.06
    • 10 $7.72
    • 100 $6.62425
    • 1000 $4.78871
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    Mouser Electronics FN9222SB-6-06
    • 1 $8.77
    • 10 $7.34
    • 100 $6.63
    • 1000 $4.78
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    TME FN9222SB-6-06 120
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    Sager FN9222SB-6-06 1
    • 1 $5.28
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    • 100 $4.99
    • 1000 $4.73
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    Schaffner FN9262SB-6-06

    PWR ENT MOD RCPT IEC320-C14 PNL
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    DigiKey FN9262SB-6-06 Tray 60 1
    • 1 $21.25
    • 10 $17.319
    • 100 $14.77467
    • 1000 $13.375
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    Mouser Electronics FN9262SB-6-06 92
    • 1 $22.02
    • 10 $18.24
    • 100 $16.45
    • 1000 $13.75
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    TME FN9262SB-6-06 60
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    Master Electronics FN9262SB-6-06
    • 1 $22.84
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    • 100 $14.97
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    Sager FN9262SB-6-06 1
    • 1 $15.51
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    • 100 $13.9
    • 1000 $12.98
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    Schaffner FN9262SB-6-07

    PWR ENT MOD RCPT IEC320-C14 PNL
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    DigiKey FN9262SB-6-07 Box 59 1
    • 1 $30.47
    • 10 $23.503
    • 100 $19.49067
    • 1000 $15.84441
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    Mouser Electronics FN9262SB-6-07 53
    • 1 $22.97
    • 10 $18.59
    • 100 $17.15
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    TME FN9262SB-6-07 60
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    Sager FN9262SB-6-07 1
    • 1 $18.29
    • 10 $18.29
    • 100 $16.39
    • 1000 $15.3
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    2SB60 Datasheets (118)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB60 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB60 General Instrument Bridge Rectifier Cross Reference Guide Scan PDF
    2SB60 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB60 Unknown Cross Reference Datasheet Scan PDF
    2SB60 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB60 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB60 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB60 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB600 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB600 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB600 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB600 Unknown Transistor Replacements Scan PDF
    2SB600 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB600 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    2SB600 Unknown Cross Reference Datasheet Scan PDF
    2SB600 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB600 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB600 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB600 Unknown NPN/PNP Silicon Triple Diffused MESA Transistor, Audio Frequency Power Amp Scan PDF

    2SB60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD555

    Abstract: 2SB600
    Text: Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING see Fig.2 PIN


    Original     		PDF 2SD555 2SB600 2SD555 2SB600

    2SB600

    Abstract: 2SD555
    Text: SavantIC Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING see Fig.2 PIN


    Original     		PDF 2SB600 2SD555 -25mA -200V; 2SB600 2SD555

    2SB600

    Abstract: 2SD555
    Text: JMnic Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1


    Original     		PDF 2SB600 2SD555 -25mA -200V; 2SB600 2SD555

    2SB600

    Abstract: 2SD555
    Text: Inchange Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2


    Original     		PDF 2SB600 2SD555 -200V; 2SB600 2SD555

    2SB600

    Abstract: 2SD555 200w audio amplifier ic 200w audio power amplifier 200W POWER TRANSISTORS
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB600 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·High Power Dissipation: PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 APPLICATIONS ·Audio frequency power amplifier applications.


    Original     		PDF 2SB600 -200V 2SD555 -200V; -50mA; 2SB600 2SD555 200w audio amplifier ic 200w audio power amplifier 200W POWER TRANSISTORS

    2SB601

    Abstract: ic3a 17C IC
    Text: SavantIC Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications


    Original     		PDF 2SB601 O-220C -100V, 2SB601 ic3a 17C IC

    2SB609

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base


    Original     		PDF 2SB609 -10mA 2SB609

    2SD555

    Abstract: 2SB600
    Text: SavantIC Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING see Fig.2 PIN


    Original     		PDF 2SD555 2SB600 2SD555 2SB600

    2SD560

    Abstract: 2SB601
    Text: SavantIC Semiconductor Product Specification 2SD560 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use PINNING PIN DESCRIPTION


    Original     		PDF 2SD560 O-220C 2SB601 2SD560 2SB601

    2SB601

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High-DC current gain due to Darlington connection • Low collector saturation voltage


    Original     		PDF 2SB601 2SB601

    2SB609

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base


    Original     		PDF 2SB609 -10mA 2SB609

    2SB601

    Abstract: ic3a
    Text: Inchange Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications


    Original     		PDF 2SB601 O-220C 2SB601 ic3a

    DARLINGTON 3A 100V npn

    Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601


    Original     		PDF 2SB601 VCC50V 2SD560 DARLINGTON 3A 100V npn 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor

    2sb601

    Abstract: 2SB60
    Text: JMnic Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications


    Original     		PDF 2SB601 O-220C -100V, 2sb601 2SB60

    2SD555

    Abstract: 2SB600 NEC 2SB600 2SD666C 2SD666
    Text: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SB600/2SD555 AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D ESC R IPTIO N PACKAGE DIM EN SIO N S in millimeters inches The 2SB600/2SD555 are triple diffused high power transistors designed for use


    OCR Scan     		PDF 2SB600/2SD555 2SB600/2SD555 2SB600 2SD555 2SB600 NEC 2SD666C 2SD666

    2SB641 r

    Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
    Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #


    OCR Scan     		PDF 2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686

    2SD555

    Abstract: 2SB600 300W TRANSISTOR AUDIO AMPLIFIER 200V transistor npn 10a 300 watts audio amplifier
    Text: r 2SD555/2SB600 2 8 0 5 5 5 /2SB600 v & i / 'J 3 V I* 7 V * * * / N PN /PN P N P N /P N P SILICON TRIPLE DIFFUSED MESA TRANSISTOR Frequency Power Amplifier ft »/F E A T U R E S • Mfflttifi 200~300W Hi-Fi 7 v 7'iOtB^/M zi v y ' t v 9 ') \ v y 7* ? X *i> Z o


    OCR Scan     		PDF 2SD555/2SB600 00-300W 2SB600 2SD555 ycleS50% 2SB600/2SD555 200/200V, 50/50mA* 10/10A, 300W TRANSISTOR AUDIO AMPLIFIER 200V transistor npn 10a 300 watts audio amplifier

    2SB1099

    Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
    Text: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A


    OCR Scan     		PDF 2SA1706 2SB880 2SB676 2SB601 2SB950 2SB1341 2SB886 2SB673 2SB1108 2SB1343 2SB1099 2SB615 nec 2SB1099 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613

    2SB605

    Abstract: transistor 2sb605 2SD571
    Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SB605 The 2SB605 is designed for use in driver and output stages of audio frequency amplifiers. PACKAG E D IM E N S IO N S in millimeters inches FE A T U R E S 7 0 MAX (0 275 MAX • High Total Power Dissipation and High Breakdown Voltage:


    OCR Scan     		PDF 2SB605 2SB605 2SD571 -5m-10m-20m -50m-Â 00m-200m-500m-I transistor 2sb605

    2SB638

    Abstract: 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA953 2SA1217 2SB793 2SA1108
    Text: - 66 - « m Type ft No. € M a n uf. E ft 2SA886 2SB1314 2SB601 2SB1434 2SA1286 893 - 2SB 894 ^ 2 SB 895 2SB 895A 2SB 899 2SB 900 2SB 901 2S8 902 2SB 905 2SB 908 2SB 907 2SB 908 2SB 909- 2SB 910- 2SB 911 2SB 912 2SB 913 2SB 914 ; - „ . - 2SB 915 2SB 916


    OCR Scan     		PDF 2SA984 2SA562TM 2SA953 2SA673A 2SA720 2SB1142 2SA1217 2SB744 2SA715 2SA886 2SB638 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SB793 2SA1108

    A3JE

    Abstract: 4-0992 5w0i JE 33 2SB601 T460 E25EB
    Text: SEC k l ï r / \ f Z Silicon P o w e r T ran sistor A 2SB601 PNPXf ^ > V 3 > h=7v ^ <J> hV & m x i f f l PNP Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Medium Speed Switching Industrial Use ^fl^IS| Unit : mm) o r o - U > -3 v


    OCR Scan     		PDF 2SB601 A3JE 4-0992 5w0i JE 33 2SB601 T460 E25EB

    2sb605

    Abstract: transistor 2sb605
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB605 AUDIO FREQUENCY POWER AM PLIFIER PNP SILICON EPITAXIAL TRANSISTOR D E SC R IP T IO N The 2 S B 6 0 5 is designed for use in driver output stages of audio frequency amplifiers. FEATURES PA C K A G E D IM E N S IO N S


    OCR Scan     		PDF 2SB605 2SB605 transistor 2sb605

    S1WB(A)60B

    Abstract: LN1VB60 LN1WBA60 LN2SB60 LN6SB60 S1NB20 S1YB20 S1ZB20
    Text: Bai 1V iL/gw tötete iWgJg©- ®fexa ©g Electrical Characteristics Absolute Maximum Ratings Type No. V rm [V ] L.M1 W B A 6 0 L N 1V B 6 0 LN 2SB60 600 IliilSSlSSIlB LN6SB60 io [A ] - Conctas: Tc [ ”C ] IFSM 1.1 25* 50 Tstg Vf (maxi Tj iäiiiSS. I=


    OCR Scan     		PDF LN1WBA60 LN1VB60 LN2SB60 LN6SB60 S1YB20 S1ZB20 S1NB20 S1WB(A)60B LN1VB60 LN2SB60 LN6SB60

    BA60

    Abstract: rectifier s1wb Bridge diodes
    Text: Rectifier Diodes Low Noise Bridge Diodes Electrical Characteristics Absolute Maximum Ratings rm lo Conditions [V] [A] [°C] V Part No. If s m Tstg Tj [A] [°C] [°C] Ir tre eil eja ejc Conditions max (max) (max) (max) (max) If V r=Vrm [A] [mA] Vf (max) To


    OCR Scan     		PDF LN1VB60 2SB60 4SB60 6SB60 S1YB20 S1ZB20 S1NB20 BA60 rectifier s1wb Bridge diodes