2SB1396
Abstract: ITR09637 ITR09638
Text: 2SB1396 Ordering number : EN2911A SANYO Semiconductors DATA SHEET 2SB1396 PNP Epitaxial Planar Silicon Transistor DC-DC Converter, Motor Driver Applications Features • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
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2SB1396
EN2911A
2SB1396
ITR09637
ITR09638
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Untitled
Abstract: No abstract text available
Text: Product specification 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage
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2SB1396
250mm
-30mA
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2SB1396
Abstract: No abstract text available
Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter
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2SB1396
250mm
-30mA
2SB1396
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2SB1396
Abstract: No abstract text available
Text: Ordering number:EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density,
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EN2911
2SB1396
2SB1396]
2SB1396
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no291
Abstract: 2SB1396 ITR09637 ITR09638 ITR09639 ITR09640 ITR09641 ITR09642
Text: Ordering number:ENN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features Package Dimensions unit:mm 2038A [2SB1396] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes. · Large current capacity.
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ENN2911
2SB1396
2SB1396]
25max
no291
2SB1396
ITR09637
ITR09638
ITR09639
ITR09640
ITR09641
ITR09642
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dc-dc stepdown converter 12 to 5v 3a
Abstract: IC 555 details dc-dc converter 12v to 5v 3a
Text: Improvement by MBIT-II Conventional MBIT 65k cell / inch2 MBIT-II 114k cell / inch2 PCP SC-62 CPH 2SB1396 (10V, 3A) CPH3106 (12V, 3A) 2.9 (C) 4.5 1.5 (C) CPH PCP 2.8 0.9 4.25 (B) (E) Mount Area : 8.1mm2 (B) (C) (E) MCPH Mount Area : 19.1mm2 f s me Pro i
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SC-62)
2SB1396
CPH3106
MCPH3106
220mV
110mV
100mA
MCH3105
138ns
dc-dc stepdown converter 12 to 5v 3a
IC 555 details
dc-dc converter 12v to 5v 3a
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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TA-0718
Abstract: 2088a FP107 2SB1396
Text: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN5413A
FP107
FP107
2SB1396
SBS001.
FP107]
TA-0718
2088a
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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2sc6096
Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Text: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quick selection guide Road Map Application Example Lineup according to packages
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ECSP1208-4-F
12A01M
15C01M
12A01C
15C01C
12A02CH
15C02CH
30A02CH
30C02CH
2sc6096
2SC5707
2SA2044
ECB23
2sa2039
2sc5707 replacement
30C01M
SCH2102
2sa2169
2SB1396S
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2SB1396
Abstract: FP102 SB07-03C
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
SB07-03C
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2SB1396
Abstract: CPH6704 1.5A COMMON CATHODE
Text: 注文コード No.N 6 9 9 9 CPH6704 No. N 6 9 9 9 62501 新 CPH6704 特長 TR : PNP エピタキシァルプレーナ形シリコントランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・PNP トランジスタとショットキバリアダイオードを 1 パッケージに 2 素子内蔵した複合タイプであり
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CPH6704
CPH6704
2SB1396
SB07-03C
600mm2
IT03088
IT03087
IT03089
IT03090
2SB1396
1.5A COMMON CATHODE
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FP102 equivalent
Abstract: 2SB1396 FP102 SB07-03C No39
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
FP102 equivalent
SB07-03C
No39
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Untitled
Abstract: No abstract text available
Text: I Ordering number : EN 2911 2SB1396 P N P Epitaxial P lana r Silicon T ransistor DC-DC Converter, Motor Driver Applications F eatures . Adoption of FBET, MBIT processes - Large c u rre n t capacity •Low collector to em itter saturation voltage • Small size making it easy to provide high-density, small-sized hybrid ICs
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2SB1396
250mm2
D168MO
1250mm2X
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2SB1205
Abstract: 2SD1801
Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.
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T0-126LP
MT95C123TR
2SB1205
2SD1801
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2sc4983
Abstract: No abstract text available
Text: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.
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35m/25m
min70lRBE
min70
15m/10m
typ210
SC-43
MT931228TR
2sc4983
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transistor b985
Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.
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250mm!
2SA1882/2SC4984
2SB1118/2SD1618
2SB1119/2SD1619
2SB1120
2SD1620
2SB1121/2SD1621
2SB1122/2SD1622
2SB1123/2SD1623
2SB1124/2SD1624
transistor b985
transistor b544
transistor b764
D1111 TRANSISTOR
C3117 TRANSISTOR
D1153
transistor D1207
TRANSISTOR D1347
transistor D863
B892
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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700 v power transistor
Abstract: SB07
Text: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560
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FP101
2SB1121
SB05-05CP
2SB1396
SB07-03C
2SD1621
SB07-03C
FP102
FP301
250mm2
700 v power transistor
SB07
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2SB1205
Abstract: 2S81119 2Sk222 2sa128
Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf
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TQ220ML
T0220ML
T03PB
2SB1205
2S81119
2Sk222
2sa128
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mosfet k 2038
Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB
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2SK2170
2SK1068
2SK1069
2SK1332
2SK2219
2SK303
2SK545
2SK771
mosfet k 2038
TO-40-040
PCP MOSFET
2sd1851 TRANSISTOR
transistor 2SA transistor 2 sa 72
2SB1205
2SC5155
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2SB1370
Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Text: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40
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2SB1369
2SB1370
2SB1371
2SB1372
2SB1373
2SB1375
2SB1376
61393A
09K/0.
2SD2099
2SB1370
2sd2083
2sb1383
2SD2012
2SB1375
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Untitled
Abstract: No abstract text available
Text: Ordering number: E N 3 9 6 1 A _ FP102 No. 3961A PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,
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FP102
FP102
2SB1396
SB07-03C,
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2SB1396
Abstract: no291
Text: Ordering number : EN 2911 2SB 1396 N o.2911 i P N P Epitaxial P la n a r Silicon T ran sisto r SA\YO i DC-DC Converter, Motor Driver Applications F eatu re s . Adoption of FBET, MBIT processes •L arg e c u r r e n t capacity • Low collector to em itte r sa tu ra tio n voltage
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250mm2
2SB1396
no291
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