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    Text: 2SB1207Q Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SB1207Q Freq90M req90M