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    2SB12 Search Results

    2SB12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1261(0)-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1217-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E2-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
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    2SB12 Price and Stock

    ROHM Semiconductor 2SB1260T100R

    TRANS PNP 80V 1A MPT3
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    DigiKey 2SB1260T100R Cut Tape 2,948 1
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    2SB1260T100R Digi-Reel 2,948 1
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    2SB1260T100R Reel 2,000 1,000
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    Mouser Electronics 2SB1260T100R
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    Bristol Electronics 2SB1260T100R 840
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    TME 2SB1260T100R 3
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    ComSIT USA 2SB1260T100R 3,000
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    Avnet Silica 2SB1260T100R 1,000 16 Weeks 1,000
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    onsemi 2SB1201T-TL-E

    TRANS PNP 50V 2A TP-FA
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    DigiKey 2SB1201T-TL-E Digi-Reel 1,138 1
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    2SB1201T-TL-E Cut Tape 1,138 1
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    Flip Electronics 2SB1201T-TL-E 13,300
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    ROHM Semiconductor 2SB1260T100Q

    TRANS PNP 80V 1A MPT3
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    DigiKey 2SB1260T100Q Digi-Reel 556 1
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    2SB1260T100Q Cut Tape 556 1
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    Mouser Electronics 2SB1260T100Q
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    Verical 2SB1260T100Q 1,594 283
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    Bristol Electronics 2SB1260T100Q 700
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    Ameya Holding Limited 2SB1260T100Q 40 1
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    ComSIT USA 2SB1260T100Q 24,988
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    Avnet Asia 2SB1260T100Q 24 Weeks 1,000
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    Avnet Silica 2SB1260T100Q 11 Weeks 1,000
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    Chip Stock 2SB1260T100Q 36,151
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    CoreStaff Co Ltd 2SB1260T100Q 1,594
    • 1 $0.361
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    onsemi 2SB1202S-TL-E

    TRANS PNP 50V 3A TP-FA
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    DigiKey 2SB1202S-TL-E Cut Tape 519 1
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    Rochester Electronics 2SB1202S-TL-E 28,620 1
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    Flip Electronics 2SB1202S-TL-E 1,400
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    onsemi 2SB1216S-E

    TRANS PNP 100V 4A TP
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    DigiKey 2SB1216S-E Bulk 170 1
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    Rochester Electronics 2SB1216S-E 28,496 1
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    2SB12 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB12 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB12 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB12 Unknown Cross Reference Datasheet Scan PDF
    2SB12 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB12 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB12 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB120 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB120 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB120 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB120 Unknown Cross Reference Datasheet Scan PDF
    2SB120 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB120 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB120 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1201 Kexin High-Current Switching Applications Original PDF
    2SB1201 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistors High-Curr Original PDF
    2SB1201 Sanyo Semiconductor High-current switch Original PDF
    2SB1201 TY Semiconductor High-Current Switching Applications - TO-252 Original PDF
    2SB1201 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    ...

    2SB12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD 1a 9

    Abstract: 2SB1275 50MHZ
    Text: Transistors SMD Type Power Transistor 2SB1275 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High transition frequency. fT = 50MHZ +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


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    PDF 2SB1275 O-252 50MHZ) -160V) -120V 30MHz TRANSISTOR SMD 1a 9 2SB1275 50MHZ

    2SB1205

    Abstract: strobe ic 555
    Text: Transistors SMD Type Strobe High-Current Switching Applications 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1


    Original
    PDF 2SB1205 O-252 -500mA -60mA 2SB1205 strobe ic 555

    2SD1913

    Abstract: 2SB1274
    Text: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS


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    PDF 2SD1913 O-220F 2SB1274 O-220F) 2SD1913 2SB1274

    2SD1832

    Abstract: 2SB1292
    Text: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation


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    PDF 2SB1292 O-220Fa 2SD1832 2SD1832 2SB1292

    2SB1230

    Abstract: 2SD1840
    Text: JMnic Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching


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    PDF 2SB1230 2SD1840 -100V; 2SB1230 2SD1840

    2SB1258

    Abstract: 2SD1785
    Text: JMnic Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION


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    PDF 2SB1258 O-220F 2SD1785 O-220F) -100V; 2SB1258 2SD1785

    2SB1255

    Abstract: 2SD1895
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895


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    PDF 2SB1255 2SD1895 Collector100 -140V; 2SB1255 2SD1895

    2SB1254

    Abstract: 2SD1894
    Text: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS


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    PDF 2SD1894 2SB1254 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


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    PDF 2SB1260 2SB1260 OT-89 100ms QW-R208-017

    SMD BR 08

    Abstract: 2SB1203
    Text: Transistors SMD Type High-Current Switching Applications 2SB1203 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max


    Original
    PDF 2SB1203 O-252 SMD BR 08 2SB1203

    2SB1258

    Abstract: 12V 3A RELAY PNP 100V 2A 2SD1785
    Text: Inchange Semiconductor Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose


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    PDF 2SB1258 O-220F 2SD1785 O-220F) 2SB1258 12V 3A RELAY PNP 100V 2A 2SD1785

    2SB1218

    Abstract: 2SB1218 equivalent smd BQ BS-B
    Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45 V Collector-emitter voltage


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    PDF 2SB1218 2SB1218 2SB1218 equivalent smd BQ BS-B

    2SB1225

    Abstract: 2SD1827
    Text: Inchange Semiconductor Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS


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    PDF 2SB1225 O-220F 2SD1827 O-220F) -10mA 2SB1225 2SD1827

    2SB1226

    Abstract: 2SD1828
    Text: Inchange Semiconductor Product Specification 2SB1226 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1828 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Motor drivers,printer hammer drivers,relay


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    PDF 2SB1226 O-220F 2SD1828 O-220F) 500IB1 -500IB2 2SB1226 2SD1828

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1203 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SB1203 O-252

    ic sc 4145

    Abstract: 2SD1816S-E
    Text: Ordering number : EN2540B 2SB1216/2SD1816 Bipolar Transistor http://onsemi.com – 100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications


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    PDF EN2540B 2SB1216/2SD1816 2SB1216 ic sc 4145 2SD1816S-E

    2SB1219A

    Abstract: 2SD1820A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic


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    PDF 2002/95/EC) 2SD1820A 2SB1219A 2SB1219A 2SD1820A

    2SB1218A

    Abstract: 2SD1819A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚


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    PDF 2002/95/EC) 2SD1819A 2SB1218A 2SB1218A 2SD1819A

    2SB1299

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SB1299 2SB1299

    2SB1235

    Abstract: sanyo 2033
    Text: Ordering number:EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. unit:mm 2033 [2SB1235/2SD1852]


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    PDF EN2554A 2SB1235/2SD1852 2SB1235/2SD1852] 2SB1235 2SB1235 sanyo 2033

    D1816

    Abstract: No abstract text available
    Text: Ordering number : EN 254ÛA 2SB1216/2SD1816 N 0.254OA SAiYO PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications


    OCR Scan
    PDF 254OA 2SB1216/2SD1816 2SB1216 2SB121 D1816

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.


    OCR Scan
    PDF FX501 FX501 2SB1205, 42695MO BX-1388

    JL-01

    Abstract: 2SB123 2SB1233 2SB1233A panasonic 2SB
    Text: Power T ransistors 2 S 1 B S ilicon 2 3 PN P 3 2 , 2SB12 3 3 , 2S B 1233A S B 1 2 3 3 A E p itaxial P la n a r T yp e P ackage Dim ensions P&wer Am plifier U n it : mn • F eatures *4 3.2m ax. II ■ Absolute M axim um Ratings T c = 2 5 °C Collectorbase voltage


    OCR Scan
    PDF 2SB1233, 2SB1233A 2SB12 2SB1233 2SB1233A JL-01 2SB123 panasonic 2SB

    2SB1252

    Abstract: 2SD1895
    Text: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t


    OCR Scan
    PDF 2SD1895 2SB1252 2SB1252 2SD1895