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    2SB11 Search Results

    2SB11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1115A-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1149-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SB1114-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1115-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1115(0)-T1-AY Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
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    2SB11 Price and Stock

    PanJit Group 2SB1197A_R1_00001

    SOT-23, TRANSISTOR
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    DigiKey 2SB1197A_R1_00001 Cut Tape 8,668 1
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    Ozdisan Elektronik 2SB1197A_R1_00001
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    ROHM Semiconductor 2SB1198KT146Q

    TRANS PNP 80V 0.5A SMT3
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    CoreStaff Co Ltd 2SB1198KT146Q 2,468
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    2SB1198KT146Q 24
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    onsemi 2SB1122T-TD-E

    TRANS PNP 50V 1A PCP
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    Bristol Electronics 2SB1122T-TD-E 2,700
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    Quest Components 2SB1122T-TD-E 2,160
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    Rochester Electronics 2SB1122T-TD-E 29,000 1
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    ROHM Semiconductor 2SB1198KT146R

    TRANS PNP 80V 0.5A SMT3
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    DigiKey 2SB1198KT146R Cut Tape 2,694 1
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    Mouser Electronics 2SB1198KT146R 3,126
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    TME 2SB1198KT146R 10
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    Chip1Stop 2SB1198KT146R Cut Tape 9,865
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    Win Source Electronics 2SB1198KT146R 72,000
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    Micro Commercial Components 2SB1198HE3-R-TP

    TRANS PNP 80V 0.5A SOT23
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    DigiKey 2SB1198HE3-R-TP Cut Tape 2,484 1
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    2SB11 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB110 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB110 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB110 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB110 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB110 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB110 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB110 Unknown Cross Reference Datasheet Scan PDF
    2SB110 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB1100 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1100 NEC Semiconductor Selection Guide Original PDF
    2SB1100 Various Russian Datasheets Transistor Original PDF
    2SB1100 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1100 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1100 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1101 Hitachi Semiconductor Silicon PNP Triple Diffused Original PDF
    2SB1101 Renesas Technology Silicon PNP Triple Diffused Original PDF
    2SB1101 Hitachi Semiconductor LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 Scan PDF
    2SB1101 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    ...

    2SB11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd marking BA

    Abstract: 2sb111 2SB1118
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


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    2SB1118 -100mA -10mA -50mA smd marking BA 2sb111 2SB1118 PDF

    2SB1119

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25


    Original
    2SB1119 -500mA -50mA 2SB1119 PDF

    BD transistor

    Abstract: smd marking BD 2SB1189 BD marking
    Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80


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    2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking PDF

    2SB1192

    Abstract: 2SD1770
    Text: Inchange Semiconductor Product Specification 2SB1192 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High VCEO ・Large PC ・Complement to type 2SD1770 APPLICATIONS ・Power amplifier ・TV vertical deflection output PINNING PIN DESCRIPTION


    Original
    2SB1192 O-220Fa 2SD1770 -100mA -300mA 2SB1192 2SD1770 PDF

    2SB1157

    Abstract: 120-80 2sb115 2SD1712
    Text: Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING


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    2SB1157 2SD1712 -20mA 2SB1157 120-80 2sb115 2SD1712 PDF

    2SB1100

    Abstract: 2SD1591 2SB1100 npn Ic 10a npn DARLINGTON 10A
    Text: Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING


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    2SD1591 O-220Fa 2SB1100 O-220Fa) 2SB1100 2SD1591 2SB1100 npn Ic 10a npn DARLINGTON 10A PDF

    2SB1185

    Abstract: 2SD1762
    Text: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION


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    2SB1185 O-220Fa 2SD1762 -500mA 2SB1185 2SD1762 PDF

    2SB1154

    Abstract: 2SD1705
    Text: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING


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    2SB1154 2SD1705 10MHz 2SB1154 2SD1705 PDF

    2SB1157

    Abstract: 2SD1712
    Text: JMnic Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION


    Original
    2SB1157 2SD1712 -100V; -20mA 2SB1157 2SD1712 PDF

    2SB1160

    Abstract: 2SD1715
    Text: JMnic Product Specification 2SB1160 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1715 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


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    2SB1160 2SD1715 -150V; -20mA 2SB1160 2SD1715 PDF

    2SB1101

    Abstract: 2SD1601
    Text: JMnic Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION


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    2SB1101 O-220 2SD1601 O-220) -40mA 2SB1101 2SD1601 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


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    2SB1116, 2SD1616 2SB1116 2SB1116A PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 PDF

    SMD TRANSISTOR MARKING 2A

    Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
    Text: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage


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    2SB1188 100ms 30MHz SMD TRANSISTOR MARKING 2A smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc PDF

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r : EN 2 0 4 0 A J 2SB1122/2SD1622 SA\YO PN P/N PN Epitaxial Planar Silicon Transistors i Low-Frequency Power Amp Applications Applications . Voltage regulators relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET process


    OCR Scan
    2SB1122/2SD1622 2SB1122 PDF

    2SB1118

    Abstract: 2sd1618
    Text: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,


    OCR Scan
    1784B 2SB1118/2SD1618 2SB1118 4107KI/0216AT/2065MY 118/2SD1618 2SB1118 2sd1618 PDF

    marking 210

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: E N 4 5 3 7 F eatures •Composite type with 2 transistors PNP contained in one package,facilitating high-density mounting. • The FP210 is formed with 2 chips.being equivalent to the 2SB1123,placed in one package. A bsolute M axim um R atings at Ta = 25°C


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    FP210 2SB1123 250mm2X marking 210 PDF

    103 transistor

    Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
    Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)


    OCR Scan
    2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 001470a 001471G 2SB1183F5, 103 transistor marking code SSs transistor PNP 2sb transistor LB 122 transistor PDF

    B1326

    Abstract: 2SB1175 2SD1745
    Text: Power Transistors 2SB1175 2SB1175 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1745 •Features U n it : mm 3.7max. 7.3max. • Low collector-eim itter saturation voltage Vce<,.o 3.2m ax. £L • Good linearity of DC c u rre n t gain (hFE)


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    2SB1175 2SD1745 2SB1173/A) b132652 B1326 2SD1745 PDF

    D1669

    Abstract: 2SB1136 2SD16 AOOS
    Text: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.


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    EN2092B 2092B 2SB1136/2SD1669 0V/12A 2SB1136 D1669 2SD16 AOOS PDF

    2SB1190

    Abstract: 2SB1190A 2SD1770 2SD1770A
    Text: Power Transistors 2SB1190, 2SB.il 90A 2SB1190, 2SB1190A Silicon PNP Epitaxial Planar Type Package Dimensions Powêr Amplifier TV Vertical Deflection Output Complementary Pair.with 2SD1770, 2SD1770A •Features U n it I mm 10.5±0.5 É 4.8m ax. N H ,9.8max.


    OCR Scan
    2SB1190, 2SB1190A 2SD1770, 2SD1770A 2SB1190 2SB1190A b132flSE 2SD1770 2SD1770A PDF

    2SB1192

    Abstract: 2SB1192A 2SD1772 2SD1772A
    Text: Power Transistors 2SD1772, 2SD1772A 2SD1772, 2SD1772A Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Vertical Deflection Output Complementary Pair with 2SB1192, 2SB1192A • Features U n it ! m n 4 . 4 m a \. 10 . 2 m a \. ¡2 9 m a \


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    2SD1772, 2SD1772A 2SB1192, 2SB1192A 2SD1772 2SB1192 2SB1192A 2SD1772A PDF

    2SD1608

    Abstract: 2SB1108
    Text: P o w er T ra n s is to rs 2SD1608 2S D 1608 Package D im ensions Silicon NPN Triple Diffused Planar Darlington Type M edium Speed Power S w itching C om plem entary Pair w ith 2SB1108 • Features • H igh D C c u r re n t gain hFE • H igh s p e e d s w itc h in g


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    2SD1608 2SB1108 O-220 001b773 2SD1608 2SB1108 PDF

    2SB1148

    Abstract: 2SB1148A 2SD1752 2SD1752A panasonic 2SB
    Text: Power Transistors 2 S 1 1 4 8 , B 2 2SB1148, 2SB1148A S B 1 1 4 8 A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair w ith ‘2S D 1752, 2S D 1752A U nit I mm • Features • Low co llecto r-eim itter saturation voltage V ceisjo


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    2SB1148, 2SB1148A 2SB1148 2SB1148A 100mA --40mA --35mA 2SD1752 2SD1752A panasonic 2SB PDF