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    2SA1419 Price and Stock

    onsemi 2SA1419S-TD-E

    TRANS PNP 160V 1.5A PCP
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    DigiKey 2SA1419S-TD-E Cut Tape 6,441 1
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    Mouser Electronics 2SA1419S-TD-E 5,488
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    Onlinecomponents.com 2SA1419S-TD-E
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    TME 2SA1419S-TD-E 1
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    Avnet Silica 2SA1419S-TD-E 24 Weeks 1,000
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    onsemi 2SA1419T-TD-H

    TRANS PNP 160V 1.5A PCP
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    DigiKey 2SA1419T-TD-H Digi-Reel 1
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    2SA1419T-TD-H Cut Tape 1
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    onsemi 2SA1419S-TD-H

    TRANS PNP 160V 1.5A PCP
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    onsemi 2SA1419T-TD-E

    TRANS PNP 160V 1.5A PCP
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    DigiKey 2SA1419T-TD-E Cut Tape 1
    • 1 $0.71
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    2SA1419T-TD-E Digi-Reel 1
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    2SA1419 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1419 Kexin High-Voltage Switching Applications Original PDF
    2SA1419 On Semiconductor 2SA1419 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, PCP, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1419 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistors High-Volt Original PDF
    2SA1419 TY Semiconductor High-Voltage Switching Applications - SOT-89 Original PDF
    2SA1419 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1419 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1419 Unknown PNP Epitaxial Planar Silicon Transistors High-Volt Scan PDF
    2SA1419 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1419 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SA1419 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SA1419 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SA1419R On Semiconductor 2SA1419 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, PCP, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1419R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1419R Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SA1419S On Semiconductor 2SA1419 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, PCP, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1419S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1419S Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SA1419S-TD-E On Semiconductor 2SA1419 - PNP Bipolar Transistor for Low-Frequency General-Purpose Amplifier Applications Original PDF
    2SA1419S-TD-H On Semiconductor 2SA1419S - Bipolar Transistor 160V 1.5A VCE(sat);500mV max. PNP Single PCP Original PDF
    2SA1419T On Semiconductor 2SA1419 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, PCP, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SA1419 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3649

    Abstract: 2SA1419
    Text: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート 半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用


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    PDF 2SA1419 2SC3649 N2007A 2SA1419 250mm2 100mA 2SC3649

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


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    PDF 2SA1419 2SC3649 EN2007B 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO


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    PDF 2SA1419 -50mA

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


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    PDF EN2007C 2SA1419/2SC3649 2SA1419 250mm2

    2SC3649

    Abstract: 2SA1419
    Text: Ordering number:EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Very small size making it easy to provide highdensity hybrid ICs.


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    PDF EN2007A 2SA1419/2SC3649 2SA1419/2SC3649] 2SA1419 2SC3649 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


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    PDF 2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


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    PDF EN2007B 2SA1419 2SC3649 2SA1419 250mm20

    SMD iC MARKING AE

    Abstract: 2SA1419 ae marking
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage


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    PDF 2SA1419 -500mA -50mA SMD iC MARKING AE 2SA1419 ae marking

    2SC3649

    Abstract: ITR03571 ITR03572 2SA1419
    Text: Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity hybrid ICs.


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    PDF ENN2007A 2SA1419/2SC3649 2SA1419/2SC3649] 25max 2SA1419 2SC3649 ITR03571 ITR03572 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419T Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m


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    PDF 2SA1419T Freq120M

    2SC3649

    Abstract: 2SA1419 ITR03571 2SA141
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


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    PDF 2SA1419 2SC3649 EN2007B 2SA1419 2SC3649 ITR03571 2SA141

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


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    PDF 2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK412-750

    Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
    Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: [email protected] Website: www.magnatec-tt.com A subsidiary of TT electronics plc


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    PDF SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870

    C3649

    Abstract: CQ 419 2007a 2SA1419 2SC3649 SC3649 2SA419
    Text: Ordering number: EN 2007A 2SA1419/2SC3649 PNP/NPN Epitaxial Planar Silicon Transistors H igh-V oltage Sw itching A pplications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs


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    PDF 2SA1419/2SC3649 2SA1419 C3649 CQ 419 2007a 2SC3649 SC3649 2SA419

    2007A

    Abstract: 2sc3649
    Text: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs


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    PDF 2SA1419/2SC3649 2SA1419 250inm2x0 250mmzx0 2007A 2sc3649

    transistor b985

    Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
    Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.


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    PDF 250mm! 2SA1882/2SC4984 2SB1118/2SD1618 2SB1119/2SD1619 2SB1120 2SD1620 2SB1121/2SD1621 2SB1122/2SD1622 2SB1123/2SD1623 2SB1124/2SD1624 transistor b985 transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    2SA1410

    Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
    Text: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40


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    PDF 2SA1407 2SA1408 2SA1409 2SA1410 2SC3668 2-7D101A) 2SA1428 2SC3669 2SA1429 2-7D101A 2SA1441 HV COB 2SA1408 2SA1412 2SA1412-Z 2SA1413

    C3117

    Abstract: transistor b764 TRANSISTOR D400 transistor D1207 s transistor b985 TRANSISTOR D1347 B892 D1207 s Transistor d1153 B985
    Text: SA0YO P C P Power C h i p Pack o te Transistor Series C a s e s F* s at ur* ♦ Very small size making it possible to provide high-densi ty, small-sized hybrid ICs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.


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    PDF 250mm 2SA1882/2SC4984 2SB1118/2SD1618 2SB1119/2SD1619 2SB1120 2SD1620 2SB1121/2SD1621 2SB1122/2SD1622 2SB1123/2SD1623 2SB1124/2SD1624 C3117 transistor b764 TRANSISTOR D400 transistor D1207 s transistor b985 TRANSISTOR D1347 B892 D1207 s Transistor d1153 B985

    2SB1013

    Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
    Text: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020


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    PDF 2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564

    2SC3660A

    Abstract: 2SC3660 2SC3654 2SC3629 2SC3631 2SC3631-Z 2SC3632 2SC3632-Z 2SC3636 2SC3637
    Text: - 166 - Ta=25cC, *EP(áTc=25°C m « a 2SC3629 35 s Ä HF PA VcBO VcEO Ic(DO Pc Pc* I c BO (V) (V) (A) (W) (W) <*A> 20 1 % S /\IU 1• \hF 'UB (V) 5 200 4# 14 (Ta=25t;) E \i* a a / U*s\ Ic / I e "(V)' (A) (V) [lEPtttypffi] (V) Ic (A) Ib (A) ZSC3631 a m H V HS PSf


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    PDF 2SC3629 2SC3631 2SC3631-Z 2SC3632 2SC3632-Z 2SC3636 2SC3637 2SC3638 10K/10K 2SA1423 2SC3660A 2SC3660 2SC3654 2SC3636 2SC3637