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    b0239c

    Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514


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    PDF OT5503 OT5903 2N6409 2S01516 b0239c diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode

    B0410

    Abstract: MJ050 STI-3007 STI3007 NS034 2N3439S TO5
    Text: POWER SILICON NPN Ic Item Number Part Number I C -5 10 - 15 20 >= -30 g:~g TRS3006 042R2 042R2 2S0198 2S0860A 40327L 40327S 2SC1050 2N5252 044R4 044R4 044R4 2N5253 044R8 044R8 TRS30X5 t~~g~~ 35 40 TRS30X TRS30X TRS30X B0410 2N6772 BUW40A BUW40A 2N5092 ~~~~98


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    PDF ST13006 TIP48 2SC2022 MST30B STI3007 2N6176 STI30 STI305 O-37var B0410 MJ050 STI-3007 NS034 2N3439S TO5

    B0677A

    Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301


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    PDF 2S01164Z SON301 U2T301 SON401 U2T401 2S01764 B0677A B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000

    2SK1973

    Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
    Text: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K


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    PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    2SC2030

    Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
    Text: The Class and Basic Ordering Units for Standard and Semi-standard Products To make it easier for the customer to select the type of product best suited to specific applications, we offer transistors in three types : 1 standard, (2 ) semi­ Package FTR 2SA785


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    PDF 1k--10k 1k--20k DT3C144W DT5A113Z DT5A114E DT5A124E DT5A143E DT5A143T DT5A143X DT5A144E 2SC2030 OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5

    2S81370

    Abstract: No abstract text available
    Text: T ransistors TO-220 • TO-220FP T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    PDF O-220 O-220FP T0-220FN O-220FP O-220 O-220FN 28A1634 2SB13S9 2S81370