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    2N7002BKM Price and Stock

    Nexperia 2N7002BKM,315

    MOSFET N-CH 60V 450MA DFN1006-3
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    DigiKey 2N7002BKM,315 Cut Tape
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    2N7002BKM,315 Digi-Reel 1
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    Nexperia 2N7002BKMB,315

    MOSFET N-CH 60V 450MA DFN1006B-3
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    2N7002BKMB,315 Reel
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    Bristol Electronics 2N7002BKMB,315 2,809
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    NXP Semiconductors 2N7002BKM 315

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    Bristol Electronics 2N7002BKM 315 18,662
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    NXP Semiconductors 2N7002BKMB,315

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.45A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components 2N7002BKMB,315 58
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    NXP Semiconductors 2N7002BKMB

    60 V, SINGLE N-CHANNEL TRENCH MOSFET Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 2N7002BKMB 19,300
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    Win Source Electronics 2N7002BKMB 381,000
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    2N7002BKM Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002BKM NXP Semiconductors 60 V, 450 mA N-channel Trench MOSFET Original PDF
    2N7002BKM,315 NXP Semiconductors 2N7002BKM - 60 V, 450 mA N-channel Trench MOSFET, SOT883 Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF
    2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET Original PDF
    2N7002BKMB NXP Semiconductors Discretes for portable devices and mobile handsets Original PDF
    2N7002BKMB NXP Semiconductors Chinese Version Original PDF
    2N7002BKMB,315 NXP Semiconductors 2N7002BKMB - 2N7002BKMB - 60 V, single N-channel Trench MOSFET Original PDF

    2N7002BKM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF 2N7002BKMB DFN1006B-3 OT883B)

    Untitled

    Abstract: No abstract text available
    Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF 2N7002BKMB DFN1006B-3 OT883B)

    2012051

    Abstract: NXP SMD mosfet MARKING CODE 2n7002bk
    Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF 2N7002BKMB DFN1006B-3 OT883B) 2012051 NXP SMD mosfet MARKING CODE 2n7002bk

    smd transistor marking z8

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc
    Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF 2N7002BKM OT883 SC-101) AEC-Q101 smd transistor marking z8 MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF 2N7002BKM OT883 SC-101) AEC-Q101

    smd transistor marking z8

    Abstract: 771-2N7002BKM315
    Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF 2N7002BKM OT883 SC-101) AEC-Q101 771-2N7002BKM315 2N7002BKM smd transistor marking z8

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    NX3008NBKMB

    Abstract: IP4303CX4 PCMF2DFN1
    Text: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL


    Original     		PDF PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DSN0603 DFN2520 DFN4020 NX3008NBKMB IP4303CX4 PCMF2DFN1

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    NX3008NBKMB

    Abstract: No abstract text available
    Text: AN11159 Distributed power in portable devices Rev. 2 — 27 April 2012 Application note Document information Info Content Keywords distributed power, Low DropOut LDO regulators, DC-to-DC converter, load switch, quiescent current, load current Abstract This document describes concepts for portable appliances using


    Original     		PDF AN11159 NX3008NBKMB

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


    Original     		PDF OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030

    NX3008NBKMB

    Abstract: PCMF2DFN1
    Text: 使用本手册推荐的恩智浦主要产品 保护敏感的IC – 延长电池寿命 – 节省空间 接口/功能 说明 产品型号 封装 NFC天线保护 18/24 V双向低电容 ESD保护二极管 PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006


    Original     		PDF PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DSN0603 DFN2520 DFN4020 NX3008NBKMB PCMF2DFN1

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


    Original     		PDF OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF

    BSS84AKS

    Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
    Text: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9


    Original     		PDF