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onsemi 2N6426 TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6426	Bulk			10,000	1 - 10 - 100 - 1000 - 10000 $0.05184	Buy Now
Quest Components	2N6426		303			1 $1.15 10 $1.15 100 $0.575 1000 $0.575 10000 $0.575	Buy Now
onsemi 2N6426G TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6426G	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	2N6426G		948		1	1 $0.1517 10 $0.1517 100 $0.1426 1000 $0.1289 10000 $0.1289	Buy Now
Rochester Electronics LLC 2N6426RLRA TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6426RLRA	Bulk			4,438	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
onsemi 2N6426RLRA TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6426RLRA	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.05184	Buy Now
Rochester Electronics	2N6426RLRA		198,994		1	1 $0.065 10 $0.065 100 $0.0611 1000 $0.0553 10000 $0.0553	Buy Now
onsemi 2N6426RLRAG TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6426RLRAG	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2N6426 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6426	Central Semiconductor	Leaded Small Signal Transistor Darlington	Original	PDF
2N6426	Central Semiconductor		Original	PDF
2N6426	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
2N6426	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
2N6426	Motorola	Bipolar Transistor, NPN Silicon Annular Darlington Transistor	Original	PDF
2N6426	On Semiconductor	Darlington Transistors NPN	Original	PDF
2N6426	On Semiconductor	Darlington Transistors NPN Silicon	Original	PDF
2N6426	ROHM	TRANS DARLINGTON NPN 40 MINV 0.5A 3TO-92	Original	PDF
2N6426	Siemens	Cross Reference Guide 1998	Original	PDF
2N6426	Sinyork	Mini size of Discrete semiconductor elements	Original	PDF
2N6426	Central Semiconductor	SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)	Scan	PDF
2N6426	Fairchild Semiconductor	NPN Darlington Transistor	Scan	PDF
2N6426	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6426	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N6426	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6426	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6426	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6426	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6426	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6426	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N6426 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6427 Abstract: 2N6426 Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc	Original	PDF	2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426
2N6426G Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64 Text: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	PDF	2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
Untitled Abstract: No abstract text available Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N6426 MPSA14
BC237 Abstract: 2n6426 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage	Original	PDF	2N6426* 2N6427 226AA) Juncti218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2n6426 equivalent
PN2222N Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247 Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N6426 MPSA14 PN2222N 2N6426 CBVK741B019 F63TNR transistor k 0247
2N6426 Abstract: MPSA14 Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N6426 MPSA14 2N6426
2N6426 Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage	Original	PDF	2N6426, 2N6427 2N6426 2N6426/D 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
2N6427 Abstract: No abstract text available Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc	Original	PDF	2N6426* 2N6427 226AA) 2N6427
2N6426 Abstract: No abstract text available Text: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	PDF	2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D.
2n6426 Abstract: No abstract text available Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage	Original	PDF	2N6426, 2N6427 2N6426 2N6426/D
2N6426 Abstract: 2N6427 Text: 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous	Original	PDF	2N6426* 2N6427 226AA) r14525 2N6426/D 2N6426 2N6427
TRANSISTOR c 5578 B Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor Text: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●	Original	PDF	2N6426 2N6427 AN-41 AN-569. TRANSISTOR c 5578 B 2N6427 2N6426 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
2N6426 Abstract: 2N6427 2N6427 MOTOROLA Text: MOTOROLA Order this document by 2N6426/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO	Original	PDF	2N6426/D 2N6426* 2N6427 2N6426/D* 2N6426 2N6427 2N6427 MOTOROLA
MPSA13 Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14 Text: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area	Original	PDF	CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14

2N5963 Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830 Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) VCES VEBO ICBO @ VCB (nA) (V) ICES (V) ICEV hFE hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) Crb TYP	Original	PDF	O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR • 2N6426 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted	OCR Scan	PDF	2N6426 MPSA14
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted	OCR Scan	PDF	2N6426 PSA14
2N6426 Abstract: 2N6427 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2 N6427 NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol Value Unit	OCR Scan	PDF	2N6426* N6427 2N6426 2N6427 2N6427
2N6426 Abstract: MPSA14 Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted	OCR Scan	PDF	2N6426 MPSA14 2N6426
2N6427 Abstract: 2n6426 Text: 2N6426* 2N6427 M A X IM U M R A T IN G S Rating 2 Sym b o l Value Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage V cBO 40 V dc Emitter-Base Voltage Vebo 12 V dc Collector Current — C o n tinu ous 'c 500 m A dc Total Device Dissip ation <a- T a = 25’C	OCR Scan	PDF	2N6426* 2N6427 O-226AA) 2N6426, 2N6427 2n6426
2n6427 Abstract: 2N6426 Text: 2N6426* 2N6427 M A X IM U M RATINGS Rating Symbol Value U n it v CEO 40 Vdc C ollector-Base V o ltage v CBO 40 Vdc Em itter-Base V o ltage v EBO 12 Vdc C o lle ctor-E m itter V o ltage CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector C u rrent — C o ntinuous	OCR Scan	PDF	2N6426* 2N6427 O-226AA) 2N6426 2n6427
2N6427 Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6426/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2 N6 4 2 6 * 2N 64 27 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Unit VCEO 40 Vdc C o lle c to r-B a s e Voltage VCBO 40 Vdc E m itte r-B a s e Voltage	OCR Scan	PDF	2N6426/D 2N6427
2N5832 Abstract: 2n6008 Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C	OCR Scan	PDF	0SD433Ô TP5810 TP5812 TP5814 TP5816 TP5818 TP5820 TP5822 TP5824 TP5825 2N5832 2n6008
tpq2907 Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays	OCR Scan	PDF	05G433Ã 14-pin TPQ7051 TPQ6700 TPQ6600A TPQ6600 TPQ6502 2N3904 2N3906 tpq2907

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2N6426 Datasheets (41)

2N6426 Datasheets Context Search

2N6427

2N6426G

Untitled

BC237

PN2222N

2N6426

2N6426

2N6427

2N6426

2n6426

2N6426

TRANSISTOR c 5578 B

2N6426

MPSA13

2N5963

Untitled

Untitled

2N6426

2N6426

2N6427

2n6427

2N6427

2N5832

tpq2907