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Microchip Technology Inc 2N6048 PNP POWER TRANSISTOR SILICON AMP
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Microchip Technology Inc	2N6048			36 Weeks		1 $50.66 10 $50.66 100 $50.66 1000 $50.66 10000 $50.66	Buy Now

Onlinecomponents.com	2N6048					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
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2N6048 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6048	API Electronics	15 AMPS / 20 AMPS NPN Transistors	Scan	PDF
2N6048	API Electronics	Short form transistor data	Short Form	PDF
2N6048	API Electronics	Short form transistor data	Short Form	PDF
2N6048	Diode Transistor	Silicon Transistors / TO-63 Transistors	Scan	PDF
2N6048	Diode Transistor	Silicon Transistors	Scan	PDF
2N6048	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N6048	Diode Transistor	Silicon Transistors	Scan	PDF
2N6048	General Transistor	NPN Power Transistors	Scan	PDF
2N6048	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6048	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6048	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6048	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6048	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6048	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N6048	Unknown	Transistor Replacements	Scan	PDF
2N6048	New England Semiconductor	NPN TO-53 / TO-114 Transistor	Scan	PDF
2N6048	New England Semiconductor	BIPOLAR NPN TRANSISTOR TO-63	Scan	PDF
2N6048	New England Semiconductor	NPN Transistors, TO-63 / TO-114	Scan	PDF
2N6048	Pirgo Electronics	Low Frequency Silicon Power Transistor	Scan	PDF
2N6048	PPC Products	Transistor Short Form Data	Scan	PDF

2N6048 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N4211 Abstract: to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732 Text: Device Type 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N5959 2N6046 2N6047 2N6048 SDT3201 SDT3202 SDT3203 SDT3204 SDT8002 SDT8003 SDT8012 SDT8013 SDT8015 SDT8016 SDT8045 SDT8070 SDT8071 SDT8751 SDT8753 SDT8754 SDT8755 SDT8756 SDT8757	Original	PDF	2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N4211 to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732
Untitled Abstract: No abstract text available Text: 2N6048 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)20 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)20	Original	PDF	2N6048 Freq30M time600n
2N4211 Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228 Text: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110	Original	PDF	2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
2N558B Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002 Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors TypNo. VCEO (•!) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265	OCR Scan	PDF	0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
TO63 package Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3	OCR Scan	PDF	2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150
2N5251 Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114 Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20	OCR Scan	PDF	000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
Untitled Abstract: No abstract text available Text: mI m J E L E C T R O N IC S , INC. \|-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100	OCR Scan	PDF	2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412
4116 2n Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
2N3055 Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 Text: mI m J E L E C T R O N IC S , INC. \|-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100	OCR Scan	PDF	2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
TO63 Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359 Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629	OCR Scan	PDF	f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 TO63 2N3599 2N3772
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	PDF	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Untitled Abstract: No abstract text available Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840	OCR Scan	PDF	2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744
Jan2N3055 Abstract: No abstract text available Text: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100	OCR Scan	PDF	2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 Jan2N3055
2N5314 Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 Text: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F \| d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN	OCR Scan	PDF	0CH3592 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N5314

2N1936 Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772	OCR Scan	PDF	DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
4010 IC Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266 Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)	OCR Scan	PDF	0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
terminals of 2n3055 Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882 Text: mI m J E L E C T R O N IC S , INC. \|-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100	OCR Scan	PDF	2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 terminals of 2n3055 2N4211 TO111 package 2N5882
AP1152 Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772	OCR Scan	PDF	DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 AP1152 2N4211
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
9300 Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301 Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30	OCR Scan	PDF	2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301
TO63 package Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3	OCR Scan	PDF	2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN
2N4211 Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359 Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629	OCR Scan	PDF	f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 2N4211 TO63 2N3599 2N3772
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2	OCR Scan	PDF	2N3848 2N3S49 2N4002 2N4003 2N4210 2N4211 2N5539

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2N6048 Search Results

2N6048 Price and Stock

Microchip Technology Inc 2N6048

2N6048 Datasheets (24)

2N6048 Datasheets Context Search

2N4211

Untitled

2N4211

2N558B

TO63 package

2N5251

Untitled

4116 2n

2N3055

TO63

2NS604

Untitled

Jan2N3055

2N5314

2N1936

4010 IC

terminals of 2n3055

AP1152

MC2259

y51 h 120c

9300

TO63 package

2N4211

Untitled