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    Microchip Technology Inc 2N4225

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    2N4225 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4225 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4225 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4225 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4225 Unknown Vintage Transistor Datasheets Scan PDF
    2N4225 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4225 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4225 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4225 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4225 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4225 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N4225 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4225 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF
    2N4225 PPC Products Transistor Selection Guide Scan PDF
    2N4225 PPC Products Transistor Short Form Data Scan PDF
    2N4225 Semico NPN Silicon Power Transistors Scan PDF
    2N4225 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N4225 Solitron Devices 3 Amp NPN Power Transistors Scan PDF

    2N4225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1718

    Abstract: 2N1720 2N1714
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


    Original     		PDF

    bu808 equivalent

    Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
    Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200


    Original     		PDF 2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143

    2N1720

    Abstract: 2N1718 2N1714 2N2992 2N486
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


    Original     		PDF

    2n1720

    Abstract: 2N1716 N2989 2N1718 2N1252 2N3665 2N5682 MT-13 2N2993 2N4001
    Text: high-rei power transistors 77 SILICON NPN TRANSISTORS 2 Amp BREAKDOWN VOLTAGE I TYPE NUMBER CASE SIZE 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 N2988 N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666


    Original     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 N2989 2N3665 2N5682 MT-13 2N2993 2N4001

    2N3666

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


    Original     		PDF SPHV405 SPHV406 SPHV407 SPHV408 SPHV409 SPHV420 SPHV421 SPHV422 SPHV423 SPHV424 2N3666

    JAN2N5339

    Abstract: JANTX2N4150 JANS2N3439
    Text: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S


    OCR Scan     		PDF

    2N4225

    Abstract: Solidev 2N4226 ic 4588 34164 Solitron Transistor
    Text: ° , 8368602 SOL ITRON DEVICES INC - S0LITR0N DEVICES INC ~ kïi DE | flHbflbDE 00DlHci4 L | ~ ^ O l i t r o n DEVICES, INC. T R A N S IS T O R L /g* D IV IS IO N 2N4225 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLA. 33404 * <305 848-4311 P 3 2N4226 KPN POWER TRANSISTORS


    OCR Scan     		PDF 2N4225 2N4226 2N4226 2N4225 Solidev ic 4588 34164 Solitron Transistor

    2N1718

    Abstract: 2N1720 2N3665 SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716
    Text: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 MT-13 2N1720 2N3665 SDT5052

    2N3016

    Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
    Text: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 MT-13 2N1720 2N3016 SDT5052

    2n3223

    Abstract: 2N3543 2N3222 2N2632 2k4075
    Text: 81 3 4 6 9 3 S E M I C O A 40 D E | fll34bT3 □ □ □ D I E S 1 1 ^ 2 7 - 0 / NPN SILICON POWER TRANSISTORS Electrical Characteristics @ 25°C Maximum Ratings Device Type No. NPN Dissipation @ 25°C Case Watts (Cont.) Amps VCB Volts VCE Volts 2N3595 2N3596


    OCR Scan     		PDF 2n3595 2n3596 2n5662 2n5660 2n3917 to-66 2n3918 2n3222 2n3223 2n2890 2N3543 2N2632 2k4075

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N3053

    Abstract: 2N5330 2N5011 2N6226 2N6278 2N6352 2N6353 2N2102 2N2727 2N3119
    Text: C |:.;g ä ^ ji :tosto?»«îtM J t e ? ja^vMWT iSiiH ^ïi^,. ìp afeaw ^ 'g^w ìym ì O I I — • 6856191 TYPE CASE S IX Ìk S s w D ? . «rv if^ - ^ a ^ i- Æ ÿ sV si -.1 ao » 2N Numbe r Types P P C PRO D U C TS BREAKDOWN VOLTAGES VCB VCE CO RP Ô3D


    OCR Scan     		PDF 2N2102 2N2727 2N299Q 2N3053 2N3119 2N3420 2N3490 2N3491 2N3492 2N3867a 2N5330 2N5011 2N6226 2N6278 2N6352 2N6353