2C800 Search Results

2C800 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJCSE2C800102		Amphenol Communications Solutions	Modular Jack - 8P8C, Right Angle, Surface Mount, Single Port, Shield With No EMI Tabs and Two Side PCB Tabs, No Board Pegs, No LEDs

2C800 Price and Stock

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Aearo Technologies G-502-C8002 SCREW GROMMET THERMOPLASTIC BLUE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G-502-C8002	Bag	1,637		1	1 $0.7 10 $0.542 100 $0.4487 1000 $0.38791 10000 $0.38791	Buy Now
Aearo Technologies G-402-C8002 SCREW GROMMET THERMOPLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G-402-C8002	Bag	1,517		1	1 $0.38 10 $0.282 100 $0.2263 1000 $0.19114 10000 $0.19114	Buy Now
Aearo Technologies G-462-C8002 SCREW GROMMET THERMOPLASTIC BLUE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G-462-C8002	Bag	1,315		1	1 $0.26 10 $0.249 100 $0.249 1000 $0.249 10000 $0.249	Buy Now
Hirose Electric Co Ltd KW30-2P-2C(800) CONN PLUG HSG 2POS 1.00MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KW30-2P-2C(800)	Bag	904		1	1 $0.25 10 $0.202 100 $0.1643 1000 $0.13391 10000 $0.12147	Buy Now
Avnet Americas	KW30-2P-2C(800)	Bag	1,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $0.12707 10000 $0.12707	Buy Now
Newark	KW30-2P-2C(800)	Bulk			1,000	1 $0.186 10 $0.186 100 $0.186 1000 $0.186 10000 $0.164	Buy Now
TME	KW30-2P-2C(800)		1,000		1	1 $0.276 10 $0.201 100 $0.161 1000 $0.129 10000 $0.107	Buy Now
Interstate Connecting Components	KW30-2P-2C(800)		204			1 $0.182 10 $0.182 100 $0.182 1000 $0.182 10000 $0.182	Buy Now

Avnet Abacus	KW30-2P-2C(800)			14 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Sager	KW30-2P-2C(800)				1,000	1 - 10 - 100 - 1000 $0.154 10000 $0.132	Buy Now
Aearo Technologies G-512-C8002 SCREW GROMMET THERMOPLASTIC BLUE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G-512-C8002	Bag	744		1	1 $0.17 10 $0.165 100 $0.165 1000 $0.165 10000 $0.165	Buy Now

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2C800 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function	Original	PDF	78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD
48C20 Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout	Original	PDF	3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	PDF	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
CompactCellTM Static RAM Abstract: No abstract text available Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS	Original	PDF	Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM
GL032A Abstract: S71GL032A S71GL032 Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this	Original	PDF	S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032
M15451E Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can	Original	PDF	PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	PDF	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX
740-0007 Abstract: EN29GL064 6A000 Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and	Original	PDF	EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000
110R Abstract: S29GL128N Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this	Original	PDF	Am29LV6402M S29GL128N 110R
SA-275 Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document	Original	PDF	Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G
LH28F640BFHG-PBTL70A Abstract: No abstract text available Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	PDF	LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A
LRS1830 Abstract: No abstract text available Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.	Original	PDF	LRS1830 LRS1830) EL14Z046 LRS1830
M29W640DB Abstract: M29W640D M29W640DT A0-A21 6A000 Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns	Original	PDF	M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000
M420000000 Abstract: FSB073 3FE00 Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector	Original	PDF	Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00

MBM29BS64LF Abstract: MBM29BS64LF-18 MBM29BT64LF-18 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed	Original	PDF	DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18
LHF12F16 Abstract: wp 146 LH28F128BFHT-PTTL75A Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	PDF	LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A
BGA-101P-M01 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM	Original	PDF	DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	PDF	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
MX29LV640D Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales	Original	PDF	MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
MX29LV640ebt Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable	Original	PDF	MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
C000H-DFFFH Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation	Original	PDF	MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
FTA073 Abstract: No abstract text available Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am50DL128BH FTA073--73-Ball FTA073
Untitled Abstract: No abstract text available Text: n S I ELECTRONICS INC 3SE J> S8 -2/90 EB SbSbMbb 00003=14 R BIMSI S TR IP LIN E PA C K A G ED SERIES 1S800 • 1S809 electronics. 2C800 - 2C809 H Y P E R A B R U P T T U N IN G D IO D E S With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800	OCR Scan	PDF	1S800 1S809 2C800 2C809 1S800 2C800
2C800 Abstract: stripline 2c806 2C809 2C805 1S800 1S801 1S809 2C802 2C DIODE Text: M S I ELECTRONICS INC 35E D ES SbSbMbb 0 G 0 0 3 lìLl ì Mi M S I STRIPLINE PACKAGED electronics. HYPERABRUPT TU N IN G DIODES With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800 series hyperabrupt diodes in stripline packages are especially suitable for	OCR Scan	PDF	1S800 1S809 2C800 2C809 1S800 environmenC808 2C809 stripline 2c806 2C805 1S801 2C802 2C DIODE

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2C800 Search Results

2C800 Result Highlights (1)

2C800 Price and Stock

Aearo Technologies G-502-C8002

Aearo Technologies G-402-C8002

Aearo Technologies G-462-C8002

Hirose Electric Co Ltd KW30-2P-2C(800)

Aearo Technologies G-512-C8002

2C800 Datasheets Context Search

Untitled

48C20

SAMSUNG MCP

CompactCellTM Static RAM

GL032A

M15451E

Untitled

740-0007

110R

SA-275

LH28F640BFHG-PBTL70A

LRS1830

M29W640DB

M420000000

MBM29BS64LF

LHF12F16

BGA-101P-M01

BA102

MX29LV640D

MX29LV640ebt

C000H-DFFFH

FTA073

Untitled

2C800