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    Microchip Technology Inc TC4429MJA

    IC GATE DRVR LOW-SIDE 8CERDIP
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    DigiKey TC4429MJA Tube 5 1
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    Avnet Americas TC4429MJA Tube 6 Weeks 56
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    Mouser Electronics TC4429MJA 27
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    Newark TC4429MJA Bulk 56
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    RS TC4429MJA Bulk 9 Weeks 56
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    Microchip Technology Inc TC4429MJA Tube 1,904 6 Weeks
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    NAC TC4429MJA Tube 1,680 1
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    Avnet Silica TC4429MJA 8 Weeks 56
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    EBV Elektronik TC4429MJA 7 Weeks 56
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    Master Electronics TC4429MJA 51
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    Microchip Technology Inc TC429MJA

    IC GATE DRVR LOW-SIDE 8CERDIP
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    DigiKey TC429MJA Tube 56
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    Bristol Electronics TC429MJA 3
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    Analog Devices Inc LT1229MJ8

    IC OPAMP CFA 2 CIRCUIT 8CERDIP
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    DigiKey LT1229MJ8 300
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    Maxim Integrated Products MAX4429MJA-883B

    IC GATE DRVR LOW-SIDE 8CERDIP
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    DigiKey MAX4429MJA-883B Tube
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    Analog Devices Inc MAX4429MJA/883B

    IC MOSFET DRVR COTS
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    Ameya Holding Limited MAX4429MJA/883B 28
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    29MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk2564

    Abstract: F8F60VX2 29mJ
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2564 F8F60VX2) FTO-220 00-200V 290mJ 2sk2564 F8F60VX2 29mJ

    F8F60VX2

    Abstract: 2sk2564
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2564 F8F60VX2) FTO-220 00-200V 290mJ F8F60VX2 2sk2564

    Untitled

    Abstract: No abstract text available
    Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and


    Original     		PDF NTE2969 NTE2969

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    IXAN0017

    Abstract: 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC
    Text: New 1600V BIMOSFET™ Transistors Open Up New Applications IXAN0017 by Ralph E. Locher IXYS Corporation Santa Clara, CA Introduction There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are


    Original     		PDF IXAN0017 IXBH40N160, IXAN0017 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC

    2SK2564

    Abstract: F8F60VX2 N channel 600v 8a mosfet 60
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2564 F8F60VX2) FTO-220 00-200V 290mJ 2SK2564 F8F60VX2 N channel 600v 8a mosfet 60

    BERULUB FR 16

    Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
    Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits


    Original     		PDF ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B

    IXLD4429

    Abstract: X1ev IXLD4425 IXLD IXLD429 IXLD4424 IXLD1426 ixld1428 C 4429 4429
    Text: RTYVC • J A A I I X y S CORP IflE D ■ 4böb22b 0000723 5 I PRELIMINARY INFORMATION - p ü 5 2 ,- l^ - q o Latch-Immune High-Speed, High-Current Single MOSFET/IGBT Driver IXLD4420/4429 General Description Features The IX L D 4 4 2 0 /4 4 2 9 MOSFET/IGBT Drivers are tough, e ffi­


    OCR Scan     		PDF IXLD4420/4429 IXLD426/1426/4426 IXLD4420/4429 1XLD4420/4429 IXLD4423 IXLD4429 X1ev IXLD4425 IXLD IXLD429 IXLD4424 IXLD1426 ixld1428 C 4429 4429