Si4562DY
Abstract: No abstract text available
Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 –20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5.0 D1 D1 S2 SO-8 S1
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Si4562DY
S-54940--Rev.
29-Sep-97
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Si4982DY
Abstract: No abstract text available
Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4982DY
S-54938--Rev.
29-Sep-97
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SI3443DV
Abstract: No abstract text available
Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm
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Si3443DV
S-54948--Rev.
29-Sep-97
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Si4542DY
Abstract: No abstract text available
Text: Si4542DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V "6.9 0.035 @ VGS = 4.5 V "5.8 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 D1 S2 SO-8 S1 G1 S2 G2 8
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Si4542DY
S-54950--Rev.
29-Sep-97
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Si4562DY
Abstract: SI4562
Text: Si4562DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5.0 D1 D1 S2 SOĆ8 S1 1 8
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Si4562DY
S-54940--Rev.
29-Sep-97
SI4562
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Untitled
Abstract: No abstract text available
Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm
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Si3443DV
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm
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Si3443DV
S-54948--Rev.
29-Sep-97
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET
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Si4966DY
Temperature50
S-54939--Rev.
29-Sep-97
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET
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Si4966DY
Storag50
S-54939--Rev.
29-Sep-97
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Si4982DY
Abstract: No abstract text available
Text: Si4982DY Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4982DY
S-54938--Rev.
29-Sep-97
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET
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Si4966DY
S-54939--Rev.
29-Sep-97
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Si4562DY
Abstract: No abstract text available
Text: Si4562DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5.0 D1 D1 S2 SOĆ8 S1 1 8
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Si4562DY
S-54940--Rev.
29-Sep-97
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Si4982DY
Abstract: No abstract text available
Text: Si4982DY Siliconix Dual N-Channel 100-V D-S Rated MOSFET New Product Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4982DY
Rang100
S-54938--Rev.
29-Sep-97
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Untitled
Abstract: No abstract text available
Text: AMP 108-7066 Product Specification 29Sep97 Rev B Switch, Rotary, Hexadecimal 1. SCOPE 1.1. Content This specification covers the performance, tests and quality requirements for the AMP* Hexadecimal preprogrammed printed circuit board switch. These switches are 16 step and 10 step rotary, 8-4-2-1 binary,
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29Sep97
20NOV96
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V
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4542DY
S-54950--Rev.
29-Sep-97
S-54950--
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Untitled
Abstract: No abstract text available
Text: _ SÌ3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY V o s (VI -2 0 to (A) R dS{ON) (¿2) 0.065 @ V Gs = “ 4-5 V ± 4 .4 0 .090 @ V GS * -2 .7 V ± 3 .7 0.100 @ V GS = -2 .5 V ± 3 .5 (4 )S o TSOP-6 Top View
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3443DV
S-54948--
29-Sep-97
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. AA DIST R E V IS IO N S 22 LTR REV; EC 0502-0351-98 B 00. 1 [.004] Z Y © X 0 o 37 .85 [1 .490] 0 0 . 8 9 ± 0 .08 [.0 3 5 ± . 003]
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22SEP97
23FEB95
24-JUN-
amp36051
/home/amp36051/edmmod
29SEP97
060CT97
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ3443DV S e m i c o n d u c t o r s P-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS(V) r DS(on) ( ß ) 0.065 @ V GS= -4 .5 V ± 4.4 -20 0.090 @ V GS = -2 .7 V ±3.7 0.100 @ Vqs = -2.5 V ±3.5 Id (A) (4) S o T S O P -6 T o p V iew 3 m nm i
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3443DV
S-54948--
29-Sep-97
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PDF
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Untitled
Abstract: No abstract text available
Text: Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET P R O D U C T SUM M ARY v Ds m Rds«m ) ( ) I d {A) 0.025 @ VGS = 4.5 V ±7.1 0.035 @ VGS = 2.5 V ±6.0 i» -* 20 u D, SO -8 D, U o jl d2 ~5~1 D2 Dg D2 PARAMETER Ô Ô Si S2 N-Channel MOSFET N-Channet MOSFET
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S-54939--
29-Sep-97
Si4966DY
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC DIST AD ALL RIGHTS RESERVED. R EVISIO N S 47 LTR R DESCRIPTION REVISED PER EC 0G21-0164-98 DATE DUN APVD 8-24-98 JG JG A±. 0 0 8 [0. 2] □ += 000i- + 0 -|
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0G21-0164-98
000i-
C17510.
CB1100.
29-SEP-97
qmp12439
ne/ssrv172a/dsk01/dept3621/ornp12439/draw
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. 4RN A U COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST AA R E V IS IO N S 22 P LTR C DESCRIPTION DATE DWN TK JW 28FEB07 REV PER ECO—07—004331 APVD MATERIAL:
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28FEB07
UL94V-0;
81//m[
27yum
22SEP97
31MAR2000
29SEP97
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic Si3443DV Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V D S (V ) -2 0 r DS(on) (£2) I d (A ) 0 .0 6 5 @ V Gs = - 4 .5 V ± 4 .4 0 .0 9 0 @ V Gs = - 2 .7 V ± 3 .7 0 .1 0 0 @ V Gs = - 2 . 5 V ± 3 .5 (4 )S Q TSOP-6 Top View 3 mm
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Si3443DV
S-54948â
29-Sep-97
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Untitled
Abstract: No abstract text available
Text: T em ic SÌ4982DY S e m i c o n d u c t o r s Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS(V) I d (A) n>S(on) (ß ) 100 0.150 @ Vqs = 10 V ±2.6 0.180 @ Vqs = 6 V ±2.4 po*e SO-8 s' E 0, IX Œ g2 q : ~ n D! T 1 D, ID ~5~l D2 Top View Ô s Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4982DY
S-54938--
29-Sep-97
S-54938--Rev.
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. AA REVISIONS DIST 22 LTR DATE OWN APVD 22JUN98 DD EL DESCRIPTION REV; EC 0502-0351-98 MATERIAL: HOUSING - HIGH TEMPERATURE THERMOPLASTIC,
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22JUN98
UL94V-0;
27jim
27fim
amp36051
/home/amp36051/edmmod
22SEP97
29SEP97
060CT97
24-JUN-98
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