KMM332F213CS-L
Abstract: No abstract text available
Text: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic RAM high density memory module. The Samsung
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KMM332F203CS-L
KMM332F213CS-L
KMM332F213CS-L
KMM332F20
2Mx32bits
28-pinTSOPII
72-pin
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2864b
Abstract: S-2860B S-2864B s286xb 2860B
Text: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.
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S-2860B/2864B
64k-bit
S-2860B
S-2864B
32byte
S-2864B:
28-pin
2864b
s286xb
2860B
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PR 8501
Abstract: PARALLEL E2PROM 2860B S-2860B S-2864B
Text: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.
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Original
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S-2860B/2864B
64k-bit
S-2860B
S-2864B
32byte
S-2864B:
28-pin
PR 8501
PARALLEL E2PROM
2860B
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Untitled
Abstract: No abstract text available
Text: Contents Features .1 Pin Assignment .1 Block Operation Mode .2
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S-281XA
Abstract: PARALLEL E2PROM
Text: Rev.1.1 CMOS 16K-bit PARALLEL E2PROM S-2812A/2817A The S-2812A and the S-2817A are low power 2Kx8-bit parallel 2 E PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.
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16K-bit
S-2812A/2817A
S-2812A
S-2817A
32byte
S-2812A:
S-281XA
PARALLEL E2PROM
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7u23
Abstract: No abstract text available
Text: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.
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OCR Scan
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KM62256CLI-LV
32Kx8Bit
100ns
72\x\N
108mW
385mW
KM62256CLGI-LV
28-pin
KM62256CLTGI-LV
28-PinTSOP
7u23
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ARD08
Abstract: KM62256CL-LU
Text: Preliminary CMOS SRAM KM62256CL-LU 32Kx8 Bit Extended Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7 -5.5 V • Fast Access Time - 3.0V Operation : 100ns Max. - 3.3V Operation : 70ns (Max.) - 5.0V Operation : 55ns (Max.)
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OCR Scan
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KM62256CL-LU
32Kx8
100ns
KM62256CLG-LU
28-pin
KM62256CLTG-LU
28-PinTSOP
KM62256CLRG-LU
KM62256CL-LU
ARD08
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM62256CLE-LU 32Kx8 Bit Extended Voltage & Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7-5.5V • Extended Temperature Range : -25 to 85°C • Fast Access Time - 3.0V Operation : 120ns Max.
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OCR Scan
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KM62256CLE-LU
KM62256CLE-LU
144-bit
32Kx8
DD2133ti
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Untitled
Abstract: No abstract text available
Text: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic Part Identification
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OCR Scan
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KMM332F203CS-L
KMM332F213CS-L
KMM332F213CS-L
KMM332F20
2Mx32bits
KMM332F203CS-L5/L6
28-pinTSOPII
72-pin
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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OCR Scan
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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TAA 981
Abstract: MSM5117400
Text: O K I Semiconductor MSM5 117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117400
304-Word
MSM5117400
cycles/32ms
A0-A10
b72424D
TAA 981
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Untitled
Abstract: No abstract text available
Text: SONY CXK58257BTM/BYM - 7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM is 262.144 bits high speed C M O S static RAM organized as 3 2,768 CXK58257BTM CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic)
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OCR Scan
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CXK58257BTM/BYM
CXK58257BTM
32768-word
CXK58257BTM/BYM
CXK58257BYM
70LLX
-10LLX
28PINTSOP
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km48v2104bs
Abstract: No abstract text available
Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2Mx32bits Dynamic Part Identification
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OCR Scan
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KMM332F203BS-L
KMM332F213BS-L
KMM332F203BS-L
KMM332F213BS-L
KMM332F20
2Mx32bits
28-pinTSOPII
72-pin
km48v2104bs
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