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    Samtec Inc SFSD-06-28-H-47.20-DR-NDX

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    DigiKey SFSD-06-28-H-47.20-DR-NDX Bag 1
    • 1 $20.58
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    Avnet Americas SFSD-06-28-H-47.20-DR-NDX Bulk 1
    • 1 $20.58
    • 10 $19.48
    • 100 $15.84
    • 1000 $15.84
    • 10000 $15.84
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    Mouser Electronics SFSD-06-28-H-47.20-DR-NDX
    • 1 $20.58
    • 10 $19.48
    • 100 $15.84
    • 1000 $13.38
    • 10000 $13.38
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    Master Electronics SFSD-06-28-H-47.20-DR-NDX
    • 1 $27.21
    • 10 $24.28
    • 100 $16.27
    • 1000 $13.91
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    Sager SFSD-06-28-H-47.20-DR-NDX 1
    • 1 $20.58
    • 10 $19.48
    • 100 $15.84
    • 1000 $15.02
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    28H4720 Datasheets Context Search

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    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M ibm0116
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P ibm0116

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - last order; 3/99 last ship IBM01164054M x 412/10, 5.0V, EDOMMDD62DSU-001015231. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SRMMDD62DSU-001015231. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SRMMDD62DSU-001015231. IBM0116405B4M x 412/10, 3.3V, EDOMMDD62DSU-001015231.


    Original     		PDF IBM01164054M EDOMMDD62DSU-001015231. IBM0116405P4M SRMMDD62DSU-001015231. IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M

    0116405

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P SA14-4226-06 0116405

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P 200nA 100nA

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power Dissipation - Active max - 85mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P 28H4720 28H4720. 350ns) 28H4720

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power Dissipation - Active max - 90 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) -1.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features Low Power Dissipation - Active max - 90 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 1 . 0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P