28C64
Abstract: STK10C68 STK11C68 embedded microprocessors eeprom 28c64 low cost eeprom programmer circuit diagram
Text: Common nvSRAM Questions Common nvSRAM Questions Simtek Corporation manufactures a complete family of high speed, high performance nonvolatile Static Random Access Memories nvSRAM . Simtek's entire product line is guaranteed nonvolatile for a minimum of 10 years, without any source of external power, special
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28C64
Abstract: STK10C68 STK11C68 STK14C88 FeRAM eeprom 28c64
Text: nvSRAM Basics Introduction Stores can be initiated in three ways: Hardware STORE, Software STORE, or AutoStore , depending on the family of component selected. Simtek Corporation manufactures a family of high speed, high performance nonvolatile Static Random
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EPROM retention bake
Abstract: 24LC04A 24c04 National Semiconductor MICROCHIP TECHNOLOGY 920 1075
Text: M Product Reliability OVERVIEW Microchip Technology Inc.’s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip’s products are supported by
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27C256
27C512A
DS11008K-page
EPROM retention bake
24LC04A
24c04 National Semiconductor
MICROCHIP TECHNOLOGY 920 1075
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Untitled
Abstract: No abstract text available
Text: M Product Reliability OVERVIEW Microchip Technology Inc.'s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip's products are supported by
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ATMEL 350
Abstract: 5962-87514 AT28C64-15DM/883 transistor smd list at28hc64b-70dm atmel 718 AT28C64-20DM "SMD Code" SMD CODE list smd code book
Text: SMD Products Introduction to the SMD Product Listing Each Standard Microcircuit Drawing SMD part number that Atmel supplies corresponds to an Atmel /883 part number. SMD products are compliant to MILSTD-883, paragraph 1.2.1 and to the requirements of the applicable standard
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MILSTD-883,
lAT28HC256-90LM/883
AT28HC256-90FM/883
AT28HC256F-90UM/883
AT28HC256F-90DM/883
AT28HC256F-90LM/883
AT28HC256F-90FM/883
ATMEL 350
5962-87514
AT28C64-15DM/883
transistor smd list
at28hc64b-70dm
atmel 718
AT28C64-20DM
"SMD Code"
SMD CODE list
smd code book
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Untitled
Abstract: No abstract text available
Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically
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28C64
28C64
000cycles
MD400004/D
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seeq 28C64
Abstract: 28C64 EEPROM eeprom 28c64 28C64-250 28C64-300 28C64 28C64-350 2SC64 at 28c64s 28C64 military
Text: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features Power Up/Down Protection Circuitry • Military, Extended and Commercial Temperature Range • - 5 5 eC to +125°C Operation Military . -40°C to +8S°C Operation (Extended)
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28C64
-55eC
MD400106/A
28C64
MD400106/A
seeq 28C64
28C64 EEPROM
eeprom 28c64
28C64-250
28C64-300
28C64-350
2SC64
at 28c64s
28C64 military
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28c64 military
Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
Text: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range
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28C64
0106/A
28C64
MD400106/A
28c64 military
28C64 plcc
28c64-200
28C64 EEPROM
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seeq 28C64
Abstract: 8c643 28C64 EEPROM 28C64 plcc 28C64-250 28C64 military eeprom+28c64
Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time a Byte Write Mode ■ Write Cycle Completion Indication
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28C64
28C64
MD400004/D
seeq 28C64
8c643
28C64 EEPROM
28C64 plcc
28C64-250
28C64 military
eeprom+28c64
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26c64
Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
Text: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low
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blG3201
28C64
DS11108A-8
26c64
28C64 EEPROM
28C64 plcc
eeprom 28c64
28C64I
28c64 ram
28C64 military
28C648
28c64
28c64 833
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28C64 military
Abstract: No abstract text available
Text: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • Military and Extended Temperature Range • -55°C to +125°C Operation Military • -40°C to +85°C Operation (Extended) SEEQ's E/M28C64 is a CMOS 5V only, 8K x 8 Electrically
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E/M28C64
E/M28C64
MD400001/D
28C64
28C64 military
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Untitled
Abstract: No abstract text available
Text: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron
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E/M28C64
E/M28C64
M28C64
MD400001/D
28C64
125-C
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E38C32
Abstract: No abstract text available
Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry
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E/M38C16
E/M38C32
3SC16
38C32
28C64
MD400030/C
E38C32
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J990
Abstract: E38C32 36C32 eeprom 2816A seeq 2816A
Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ Military and Extended Temperature flange • -5 5 ° C to +125°C Operation Military • - 4 0 ° C to +85°C Operation (Extended) CMOS Technology
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E/M38C16
E/M38C32
38C16
38C32
28C64
E/M38C5
MD400030/C
J990
E38C32
36C32
eeprom 2816A
seeq 2816A
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation
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28C64B
250ns
64-Byte
DS11120A-7
blQ3E01
28C64B_
28C64B-
DS11120A-8
120ns
150ns
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DS60037
Abstract: 28C64B-25 28C64B M/28C64B
Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation
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28C64B
28C64B
DS11120A-7
120ns
150ns
200ns
250ns
DS60037
28C64B-25
M/28C64B
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26c64
Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times
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28C64B
250ns
64-Byte
DS11120A-7
bl03S01
28C64B_
T-46-13-27
28C64B-
120ns
150ns
26c64
26C64B
28C64B
28C64B-25
28C64B-70
28C64
28C64B-12
28C64B-90
28C64B EEPROM
*26C64
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Untitled
Abstract: No abstract text available
Text: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output
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AT28C64/X
AT28C64
Electric5962-87514
Military/883C
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Untitled
Abstract: No abstract text available
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -1 2 0 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte W rite Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
Military/883C
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AT28C64X15PI
Abstract: No abstract text available
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -12 0 ns Fast Byte Write - 200 |as or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
DM/883,
FM/883,
LM/883
AT28C64X15PI
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5962-87514
Abstract: 28c64 military ST 28C64 28D6 at28c64
Text: AT28C64/X Features • • • Fast Read Access Time -120 ns Fast Byte Write - 200 us o r 1 ms Self-Timed Byte W rite Cycle Internal Address and Data Latches Internal Control Timer Autom atic Clear Before W rite • Direct Microprocesso r Control READY/BUSY Open Drain Output
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AT28C64/X
AT28C64
Military/883C
Wilitary/883C
5962-87514
28c64 military
ST 28C64
28D6
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5962-87514
Abstract: ScansUX7 AT28C64X-15DC 28C64 A12C AT28C64 AT28C64E AT28C64X 28D6 28C64 military
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Tim e-120 ns Fast Byte Write - 200 us or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
AT28C64X
DM/883,
FM/883,
LM/883
5962-87514
ScansUX7
AT28C64X-15DC
28C64
A12C
AT28C64E
28D6
28C64 military
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T28C64X-25DI
Abstract: 28C64 military
Text: AT28C64 Features • • • • • • • • • • Fast Read Access Time - 1 50ns Fast Byte Write - 200ns o r 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64
200ns
AT28C64
AT28C64/X
T28C64X-25DI
28C64 military
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X28C
Abstract: x28c64
Text: im X28C64 64K 8 K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or Vpp Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms
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X28C64
150ns
--60mA
X28C
x28c64
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