74BJ3
Abstract: No abstract text available
Text: RF-13 Rev 28FEB14 GRF7H–4–0500–1–CA3–S–73SP1 (5,00 mm) .197" 75Ω HYBRID MICRO-MINI RF CABLE SPECIFICATIONS For complete specifications see www.samtec.com?GRF7H-C High performance 30 AWG RG 179 coax cable Mates with: GRF7-J, MCX7, MMCX7, SMB7H, DIN7A, BNC7T
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RF-13
28FEB14)
73SP1
78SP4
77RP1
77SP1
78SP4
74BJ3
74SP3*
74BJ3
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smd diode a7
Abstract: No abstract text available
Text: SFH628A, SFH6286 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Low Input Current FEATURES • High common mode interference immunity • Isolation test voltage, 5300 VRMS • Low coupling capacitance 1 A/C 1 4 C C/A 2
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SFH628A,
SFH6286
i179080-3
SFH628A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
smd diode a7
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PAD Pattern
Abstract: MLP66-40L
Text: PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK MLP66-40L 2.200 0.100 0.100 0.200 0.276 0.025 0.025 0.100 1 1 40 40 0.100 0.100 0.310 0.320 0.100 1.700 2.600 0.100 0.100 0.600 0.276 2.200 0.100 4.600 0.100 All Dimensions are in milimeters
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MLP66-40L
28-Feb-14
PAD Pattern
MLP66-40L
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Untitled
Abstract: No abstract text available
Text: VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • • • • • Base cathode 2 3 Anode 1 D2PAK N/C • • • • PRODUCT SUMMARY IF AV 10 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C
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VS-MBRB1035-M3,
VS-MBRB1045-M3
O-220
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiC781CD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged
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SiC781CD
SiC781
SiC781
MLP66-40L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-MBRB15.CT-M3, VS-MBR15.CT-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap TO-220 package • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-MBRB15.
VS-MBR15.
O-262
O-220
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 6 A FEATURES Base cathode 2 • 175 °C TJ operation • High frequency operation • Low forward voltage drop D2PAK • High purity, high temperature epoxy
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VS-6TQ35S-M3,
VS-6TQ40S-M3
VS-6TQ45S-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 115101-19-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: BNC CRIMP PLUG - P/N: 112116 CABLE RG-58 COAXIAL CABLE REV DESCRIPTION A THIRD ANGLE PROJ. RELEASE TO MFG. B DATE ECO APPR 12-Mar-14 2705 MB 30-Nov-10 SEE SHEET 1 - KR 2. ELECTRICAL:
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115101-19-XX
RG-58
12-Mar-14
30-Nov-10
115101-19-M0
28-Feb-14
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Untitled
Abstract: No abstract text available
Text: 115101-01-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: REV A THIRD ANGLE PROJ. BNC CRIMP PLUG - P/N: 112132 CABLE RG-316 COAXIAL CABLE DESCRIPTION RELEASE TO MFG. B DATE ECO APPR 04-Mar-14 2705 MB/BCG 11-Nov-10 SEE SHEET 1 - KR 2. ELECTRICAL:
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115101-01-XX
RG-316
04-Mar-14
11-Nov-10
28-Feb-14
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Untitled
Abstract: No abstract text available
Text: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop
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VS-47CTQ020S-M3,
VS-47CTQ020-1-M3
O-262
VS-47CTQ020S-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-43CTQ.S-M3, VS-43CTQ.-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Low forward voltage drop Base common cathode 2 • High purity, high temperature epoxy
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VS-43CTQ.
O-262
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop
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VS-47CTQ020S-M3,
VS-47CTQ020-1-M3
O-262
VS-47CTQ020S-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQ4470EY www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.012 RDS(on) () at VGS = 6 V 0.014 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ4470EY
AEC-Q101
SQ4470EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-43CTQ.S-M3, VS-43CTQ.-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Low forward voltage drop Base common cathode 2 • High purity, high temperature epoxy
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VS-43CTQ.
O-262
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-48CTQ060S-M3, VS-48CTQ060-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifiers, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation Base
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VS-48CTQ060S-M3,
VS-48CTQ060-1-M3
O-262
VS-48CTQ060S-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 6 A FEATURES Base cathode 2 • 175 °C TJ operation • High frequency operation • Low forward voltage drop D2PAK • High purity, high temperature epoxy
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VS-6TQ35S-M3,
VS-6TQ40S-M3
VS-6TQ45S-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 • • • • 3 Anode 1 D2PAK 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy
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VS-8TQ080S-M3,
VS-8TQ100S-M3
J-STD-020,
58electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiC781CD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged
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SiC781CD
SiC781
SiC781
MLP66-40L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: SiC788, SiC788A www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC788 and SiC788A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power
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SiC788,
SiC788A
SiC788
MLP66-40L
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 • • • • 3 Anode 1 D2PAK 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy
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Original
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VS-8TQ080S-M3,
VS-8TQ100S-M3
J-STD-020,
58electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • • • • • Base cathode 2 3 Anode 1 D2PAK N/C • • • • PRODUCT SUMMARY IF AV 10 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C
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VS-MBRB1035-M3,
VS-MBRB1045-M3
O-220
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: AZ23-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C”
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AZ23-Series
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AN840
Abstract: No abstract text available
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN840 “The Next Step" for Failure Analysis of Vishay Siliconix Power MOSFET By Kandarp Pandya These guidelines chronologically cover most pertinent aspects and information for a proficient and valuable failure
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AN840
92E-06
93E-06
95E-06
96E-06
97E-06
2E-06
01E-06
03E-06
05E-06
AN840
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Untitled
Abstract: No abstract text available
Text: 115101-20-XX.XX NOTES: 1. MATERIALS AND FINISHES: BNC CRIMP PLUG - P/N: 112119 CABLE RG-59 COAXIAL CABLE 2. 3. DRAWING NO. REVISIONS REV DESCRIPTION A THIRD ANGLE PROJ. RELEASE TO MFG. B ELECTRICAL: A. IMPEDANCE: 75 OHM, NOMINAL B. FREQUENCY RANGE: DC-4.0 GHz
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115101-20-XX
RG-59
12-Mar-14
30-Nov-10
115101-20-M0
28-Feb-14
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