winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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dmf605
Abstract: optrex dmf660n SAMSUNG UG-13B01 DMF660N DMF666AN LM64032 lm24010z LM721XBNP msm 8255 DMF651
Text: TECHNICAL USER’S MANUAL FOR: Euro Board MSE286 O:\SEKRETAR\HANDBUCH\MSE286.DOC Nordstr. 4F, CH-4542 Luterbach Tel.: +41 0 32 681 53 33 - Fax: +41 (0)32 681 53 31 DIGITAL-LOGIC AG MSE286 Manual V6.1 COPYRIGHT 1992-95 BY DIGITAL-LOGIC AG No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, in
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MSE286
\SEKRETAR\HANDBUCH\MSE286
CH-4542
MSE286
RS232
dmf605
optrex dmf660n
SAMSUNG UG-13B01
DMF660N
DMF666AN
LM64032
lm24010z
LM721XBNP
msm 8255
DMF651
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programming 29F400
Abstract: 29F016 29F040 29f800 29f400 29F080 28F010 28F020 28F256 28F512 29F010
Text: BDM-Debugger TX68k Debug Control By The Chip Motorola incorporates the Background Debug Mode BDM in all CPU32/CPU32+ core based microcontrollers. BDM provides Debug-Control by the chip itself via an 8- or 10-pin connector. This allows for building simple debug
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TX68k
CPU32/CPU32+
10-pin
TX68k
MC68360
on9-721-9628-149
Feb-98-001
CV47EZ
programming 29F400
29F016
29F040
29f800 29f400
29F080
28F010
28F020
28F256
28F512
29F010
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TMS28F010A
Abstract: 28F010A
Text: 28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993 • • • • • • • • • Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs
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TMS28F010A
1048576-BIT
SMJS012
28F010A-10
28F010A-12
28F010A-15
28F010A-17
168-Hour
TMS28F010A
28F010A
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Untitled
Abstract: No abstract text available
Text: 28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993 • • • • • • • • • Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs
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TMS28F010A
1048576-BIT
SMJS012
28F010A-10
28F010A-12
28F010A-15
28F010A-17
168-Hour
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Untitled
Abstract: No abstract text available
Text: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes
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28F010A
11796D.
16778C.
IN3064
16778C-20
16778C-21
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Untitled
Abstract: No abstract text available
Text: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase
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28F010A
32-pin
Am28F010A
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current
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32-Pin
28F010
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Untitled
Abstract: No abstract text available
Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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Am28F020A
32-pin
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28F020A
Abstract: 28F020T
Text: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current
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Am28F020A
32-Pin
28F020A
28F020A
28F020T
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Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e
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32-Pin
Am28F010A
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance
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Am28F010A
32-pin
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Untitled
Abstract: No abstract text available
Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time
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32-Pin
28F512A
2S752Ã
0032fc
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance
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Am28F020A
32-pin
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Untitled
Abstract: No abstract text available
Text: FSNAi- AM D3 Am28F512A 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ C M O S low power consum ption — 30 mA maximum active current
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Am28F512A
AM28F512A
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SMD A7H
Abstract: qml-38535 MD28F01090 MR28F01025
Text: _ RE V I S I O N S _ _ _ L T R _ D E S C R I P T I O N _ DA T E VR-HO-DA _ A P P R O V E D A U p d a t e d b o i l e r p l a t e . A d d e d dev i c e t y p e s 09 13. M o v e d e n d u r a n c e and d a t a re t e n t i o n t e s t i n g
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Am26F010
Abstract: am26f AM28F010
Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption
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Am28F010
32-Pin
0257S2Ã
D033TÃ
Am26F010
am26f
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2956
Abstract: 1065002 MN170
Text: 28F010A 1048576-BIT FUSH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS012-DECEM BER 1992-R E V IS E D NOVEMBER 1993 N PACKAGE O rganization. . . 128K x 8-Bit Flash Memory Pin Com patible W ith Existing 1-Megabit EPROMs V q c Tolerance ±10%
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TMS28F010A
1048576-BIT
JS012-DECEM
1992-R
28F010A-10
28F010A-12
28F010A-15
28F010A-17
168-Hour
2956
1065002
MN170
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smd marking b4h
Abstract: qml-38535 ice2 ao 565 28F010 GDIP1-T32 SMD MARKING CODE
Text: _ REVISIONS_ _ LTR_ DESCRIPTION_ DATE YR-MO-DA _ APPROVED A Updated boilerplate. Added device types 09 13. Moved endurance and data retention testing requirements from Section 4 of drawing to
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BUL-103
QML-38535.
QML-38535
MIL-BUL-103.
MIL-BUL-103
00470fi
000170cÃ
smd marking b4h
ice2 ao 565
28F010
GDIP1-T32
SMD MARKING CODE
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Untitled
Abstract: No abstract text available
Text: a Am 28 F 010 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time
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32-Pin
Am28F010A
|
OA95
Abstract: 28F010A
Text: F IN A L a A m 28F 010A 131,072 x 8-Bit CMOS Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time ■ CMOS low pow er consum ption - 30 m A m aximum active current - 100 mA m aximum standby current
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28F010A
OA95
28F010A
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Untitled
Abstract: No abstract text available
Text: FINAL AM D Ü 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■
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Am28F010A
32-pin
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Untitled
Abstract: No abstract text available
Text: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,
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Am28F01
11796D.
16778C.
Am28F010A
IN3064
16778C
16778C-21
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