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    27N80 Search Results

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    27N80 Price and Stock

    Littelfuse Inc IXFX27N80Q

    MOSFET N-CH 800V 27A PLUS247-3
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    DigiKey IXFX27N80Q Tube 59 1
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    Newark IXFX27N80Q Bulk 300
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    IXYS Corporation IXFK27N80

    MOSFET N-CH 800V 27A TO264AA
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    New Advantage Corporation IXFK27N80 49 1
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    IXYS Corporation IXFN27N80

    MOSFET N-CH 800V 27A SOT-227B
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    IXYS Corporation IXFN27N80Q

    MOSFET N-CH 800V 27A SOT-227B
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    Littelfuse Inc IXFK27N80Q

    MOSFET N-CH 800V 27A TO264AA
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    DigiKey IXFK27N80Q Tube 1
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    RS IXFK27N80Q Bulk 8 Weeks 25
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    Find more 27N80 price and stock on Findchips.com

    27N80 Datasheets Context Search

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    27n80q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C


    Original     		PDF 27N80Q 27N80Q 247TM O-264

    27N80

    Abstract: 25n80 IXFK27N80 IXFN27N80 125OC
    Text: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)


    Original     		PDF 27N80 25N80 O-264 27N80 25N80 IXFK27N80 IXFN27N80 125OC

    power mosfet ixfn 27n80q

    Abstract: 27N80Q S-7600 1M800
    Text: HiPerFETTM Power MOSFETs Q-Class IXFN 27N80Q VDSS ID25 RDS on Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 800 V = 27 A Ω = 320 mΩ S Test Conditions S Maximum Ratings TJ = 25°C to 150°C


    Original     		PDF 27N80Q OT-227 E153432 power mosfet ixfn 27n80q S-7600 1M800

    27N80Q

    Abstract: TO-264
    Text: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 27N80Q 247TM 27N80Q TO-264

    27N80

    Abstract: 25n80 IXFN27N80 IXFK27N80 125OC
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 Test Conditions VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuous ±20


    Original     		PDF 27N80 25N80 O-264 27N80 25n80 IXFN27N80 IXFK27N80 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFK 27N80Q IXFX 27N80Q VDSS ID25 = 800 V = 27 A Ω = 320 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 27N80Q 728B1

    27N80Q

    Abstract: IXFX27N80Q 27N80
    Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFK 27N80Q IXFX 27N80Q = 800 V = 27 A Ω = 320 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 27N80Q 728B1 27N80Q IXFX27N80Q 27N80

    27N80

    Abstract: U/25/20/TN26/15/850/25N80
    Text: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)


    Original     		PDF 27N80 25N80 O-264 27N80 25N80 U/25/20/TN26/15/850/25N80

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    IXFK27N80

    Abstract: IXFN27N80
    Text: nixYs v DSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 IXFN 25N80 800 800 800 800 V V V V p ^D25 27 A 25 A 27 A 25 A DS on 0.30 0.35 0.30 0.35 a Q £2 a TO-264 AA (IXFK) Symbol


    OCR Scan     		PDF IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 O-264 to150 27N80 25N80

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )


    OCR Scan     		PDF 27N80 25N80 -264A

    TO-264 Jedec package outline

    Abstract: d2580 d2560 IXFK27N80 IXFN27N80
    Text: Advanced Technical Information HiPerFET Power MOSFETs IXFK 27N80 IXFK 27N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr p VDSS ^D25 800 V 800 V 27 A 27 A DS on 0.32 Q 0.30 £2 trr —< 250 ns TO-264 AA (IXFK) Sym bol Test C onditions


    OCR Scan     		PDF 27N80 27N80 O-264 UL94V-0, TO-264 Jedec package outline d2580 d2560 IXFK27N80 IXFN27N80

    IXFN27N80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions


    OCR Scan     		PDF 27N80 25N80 25N80 O-264AA IXFN27N80

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


    OCR Scan     		PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30

    mosfet 4800

    Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055


    OCR Scan     		PDF 200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50