Untitled
Abstract: No abstract text available
Text: SKKT 27B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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27B16
E63532
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Untitled
Abstract: No abstract text available
Text: SKKT 27B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 kA2s Tj = 130 °C 1152 kA2s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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27B16
E63532
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SKKT27B12E
Abstract: No abstract text available
Text: SKKT 27B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 kA2s Tj = 130 °C 1152 kA2s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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27B12
E63532
SKKT27B12E
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semikron thyristor skkt 27b16 e
Abstract: 27B16 skkt27b16e
Text: SKKT 27B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMIPACK 1 Thyristor Modules
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27B16
E63532
semikron thyristor skkt 27b16 e
skkt27b16e
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SKKT27B12E
Abstract: 27B12
Text: SKKT 27B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t SEMIPACK 1 Thyristor Modules
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27B12
E63532
SKKT27B12E
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Untitled
Abstract: No abstract text available
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •
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2SC3072
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Untitled
Abstract: No abstract text available
Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)
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2SC3076
2SA1241
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Untitled
Abstract: No abstract text available
Text: 2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications • Unit: mm High voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −600 V Collector-emitter voltage
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2SA1937
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17CA
Abstract: M68HC16 MC16S2CPU20B1 MC16S2CPU25B1 MC68HC16S2 MC68HC16S2CPU20 MC68HC16S2CPU25 SPMC16S2CPU20 SPMC16S2CPU25 37A6
Text: Order this document by MC68HC16S2TS/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC16S2 Technical Summary 16-Bit Modular Microcontroller 1 Introduction The MC68HC16S2 is a high-speed 16-bit microcontroller. It is a member of the MC68300/M68HC16 family. M68HC16 microcontrollers are built up from standard modules that interface through a common intermodule bus IMB . Standardization facilitates rapid development of devices tailored for specific applications.
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MC68HC16S2TS/D
MC68HC16S2
16-Bit
MC68HC16S2
MC68300/M68HC16
M68HC16
CPU16)
17CA
MC16S2CPU20B1
MC16S2CPU25B1
MC68HC16S2CPU20
MC68HC16S2CPU25
SPMC16S2CPU20
SPMC16S2CPU25
37A6
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2SB907
Abstract: B-907 B907 2SD1222
Text: 2SB907 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB907 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)
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2SB907
2SD1222
20070701-JA
2SB907
B-907
B907
2SD1222
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toshiba c3075
Abstract: 2SC3075 C3075
Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V
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2SC3075
toshiba c3075
2SC3075
C3075
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2SA1242
Abstract: A1242
Text: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)
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2SA1242
20070701-JA
2SA1242
A1242
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2SJ610
Abstract: No abstract text available
Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)
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2SJ610
2SJ610
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2SB907
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage
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-2SB907
2SD1222.
2SB907
2SB907
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MMA6
Abstract: No abstract text available
Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X . APPLICATIONS
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2SK2920
MMA6
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diode U1J
Abstract: No abstract text available
Text: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 4V Gate Drive
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2SK2201
0-28H
-20kil)
diode U1J
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400V INDUSTRIAL voltage regulator
Abstract: No abstract text available
Text: SILICON NPN T R IP LE DIFFUSED T Y P E SW ITCHIN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-D C CONVERTER APPLICATIONS. • • 2SC3233 INDUSTRIAL APPLICATIONS Unit in mm 6.8MAX. Excellent Switching Times : tr =1.0//s Max. , tf= 1 .0 / i S (Max.) at Ic = 0.8A
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2SC3233
400V INDUSTRIAL voltage regulator
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)
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2SD1221
2SB906
2SD122
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)
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2SK2162
2SJ338
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2SK2235
Abstract: DDS3400 44t transistor DDS34
Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
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DDS3400
2SK2235
300juA
20kfi)
O-22QAB
O-220
50URCE
O-220FL
00E3b43
44t transistor
DDS34
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2SK2493
Abstract: No abstract text available
Text: TOSHIBA 2SK2493 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2493 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, AND DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm j 2.5V Gate Drive Low Drain-Source ON Resistance : RßS (ON)= 0.08mil (Typ.)
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2SK2493
08mil
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toshiba lot number type
Abstract: 2SJ338 2SK2162 Toshiba 2SJ
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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2SJ338
2SK2162
SC-64
-10mA,
-10mA
toshiba lot number type
Toshiba 2SJ
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2sk2782
Abstract: MMA6
Text: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X .
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2SK2782
2sk2782
MMA6
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Untitled
Abstract: No abstract text available
Text: i" &;< CMOS PARALLEL SyncFIFO CLOCKED FIFO 5 1 2 X 18-BIT & 1024 X 18-BIT FEATURES • • • • • 512 x 18-bit and 1024 x 18-bit memory array structures 20ns read / write cycle time Easily expandable in width Read and write clocks can be independent or coincident
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18-BIT
18-bit
68-lead
IDT72215L/72225L
72215LB/72225LB
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