12N60B3D
Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
12N60B3D
HGT1S12N60B3D
HGT1S12N60B3DS
HGT1S12N60B3DS9A
HGTG12N60B3D
HGTP12N60B3D
TA49188
TB334
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G12N60B3
Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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HGTP12N60B3,
HGT1S12N60B3,
HGT1S12N60B3S
HGT1S12N60B3
150oC.
112ns
150oC
TB334
G12N60B3
HGT1S12N60B3S
HGT1S12N60B3S9A
HGTP12N60B3
HGTP12N60B3D
TB334
G12N60B
G12N60
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APT10035LLL
Abstract: APT2X30D120J APT2X31D120J H100
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30D120J APT2X31D120J 27 2 T- 4 APT2X31D120J APT2X30D120J 1200V 1200V 27A 27A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X31D120J
APT2X30D120J
OT-227
APT10035LLL
APT2X30D120J
APT2X31D120J
H100
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSJ9260D,
FSJ9260R
-200V,
Rad Hard in Fairchild for MOSFET
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12N60B3
Abstract: 12n60b3d
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
1-800-4-HARRIS
12N60B3
12n60b3d
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1E14
Abstract: 2E12 FRK250D FRK250H FRK250R 32261
Text: FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK250D,
FRK250R,
FRK250H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRK250D
FRK250H
FRK250R
32261
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSYA250D,
FSYA250R
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSYA250D
FSYA250D1
FSYA250D3
FSYA250R
FSYA250R1
FSYA250R3
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FRK250H
Abstract: 1E14 2E12 FRK250D FRK250R Rad Hard in Fairchild for MOSFET PHOTO TRANSISTOR
Text: FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK250D,
FRK250R,
FRK250H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
FRK250H
1E14
2E12
FRK250D
FRK250R
Rad Hard in Fairchild for MOSFET
PHOTO TRANSISTOR
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FDB390N15A
Abstract: jc31 27a diode MOSFET 150V
Text: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mW Features Description • RDS on = 33.5mW ( Typ.)@ V GS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB390N15A
FDB390N15A
jc31
27a diode
MOSFET 150V
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Untitled
Abstract: No abstract text available
Text: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB390N15A
FDB390N15A
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717 MOSFET
Abstract: No abstract text available
Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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HGTP12N60B3,
HGT1S12N60B3,
HGT1S12N60B3S
HGT1S12N60B3
HGT1S12N60B3S
150oC.
1-800-4-HARRIS
717 MOSFET
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSYA250D,
FSYA250R
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSYA250D
FSYA250D1
FSYA250D3
FSYA250R
FSYA250R1
FSYA250R3
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1E14
Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSYA250D,
FSYA250R
1E14
2E12
FSYA250D
FSYA250D1
FSYA250D3
FSYA250R
FSYA250R1
FSYA250R3
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irfp140
Abstract: IRFp1401 160UH IRFP141 IRFP142 IRFP143
Text: IRFP140, IRFP141, IRFP142, IRFP143 S E M I C O N D U C T O R 27A and 31A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFP140,
IRFP141,
IRFP142,
IRFP143
TA17421.
irfp140
IRFp1401
160UH
IRFP141
IRFP142
IRFP143
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MIL-S-19500
Abstract: 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ9260D,
FSJ9260R
-200V,
MIL-S-19500
1E14
2E12
FSJ9260D
FSJ9260D1
FSJ9260D3
FSJ9260R
FSJ9260R1
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Irfp250
Abstract: irfp250 mosfet irfp252
Text: IRFP250, IRFP251, IRFP252, IRFP253 S E M I C O N D U C T O R 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFP250,
IRFP251,
IRFP252,
IRFP253
TA9295.
Irfp250
irfp250 mosfet
irfp252
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Untitled
Abstract: No abstract text available
Text: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSYA250D,
FSYA250R
FSYA250R
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SM81A
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ9260D,
FSJ9260R
-200V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
SM81A
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Untitled
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ9260D,
FSJ9260R
-200V,
varietyTO-254AA
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: y*Rg*s FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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PDF
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FRK250D,
FRK250R,
FRK250H
100S1
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AE
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DIODE 3LU
Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
Text: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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OCR Scan
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PDF
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HGTP12N60B3,
HGT1S12N60B3,
HGT1S12N60B3S
HGT1S12N60B3
112ns
1-800-4-HARRIS
DIODE 3LU
DIODE 3LU 32
DIODE 3LU 35
3lu diode
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G12N60B3
Abstract: TO-262AA Package equivalent
Text: HARRIS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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OCR Scan
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PDF
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HGTP12N60B3,
HGT1S12N60B3,
HGT1S12N60B3S
HGT1S12N60B3
HGT1S12N60B3S
1-800-4-HARRIS
G12N60B3
TO-262AA Package equivalent
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irfp140
Abstract: IRFP141 IRFP142 IRFP143
Text: i h a ” r r IRFP140, IRFP141, IRFP142, IRFP143 i s " I O O N ° “ C T ° " 27A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFP140,
IRFP141,
IRFP142,
IRFP143
irfp140
IRFP141
IRFP142
IRFP143
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IRFP250
Abstract: No abstract text available
Text: H a IRFP250, IRFP251, IRFP252, IRFP253 r r i s ” “ I CONDUCTOE 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150 V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRFP250,
IRFP251,
IRFP252,
IRFP253
TA929252,
RFP252,
IRFP250
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