DG2732
Abstract: R 2733 2732
Text: DG2731/2732/2733 Vishay Siliconix Low Voltage, 0.4 Ω, Dual SPDT Analog Switch DESCRIPTION The DG2731/2732/2733 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog signals. Combining
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DG2731/2732/2733
DG2731/2732/2733
DG2731
DG2732
DG2733
HP4192A
S-51920
R 2733
2732
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DG2731
Abstract: DG2733 DG2732 JESD78
Text: DG2731/2732/2733 Vishay Siliconix Low Voltage, 0.4 Ω, Dual SPDT Analog Switch DESCRIPTION The DG2731/2732/2733 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog signals. Combining
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DG2731/2732/2733
DG2731/2732/2733
DG2731
DG2732
DG2733
08-Apr-05
DG2732
JESD78
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Untitled
Abstract: No abstract text available
Text: DG2731/2732/2733 Vishay Siliconix Low Voltage, 0.4 Ω, Dual SPDT Analog Switch DESCRIPTION The DG2731/2732/2733 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog signals. Combining
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DG2731/2732/2733
DG2731/2732/2733
DG2731
DG2732
DG2733
18-Jul-08
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DG2732
Abstract: DG2731 DG2733 JESD78 R 2733
Text: DG2731/2732/2733 Vishay Siliconix Low Voltage, 0.4 Ω, Dual SPDT Analog Switch DESCRIPTION The DG2731/2732/2733 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog signals. Combining
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DG2731/2732/2733
DG2731/2732/2733
DG2731
DG2732
DG2733
18-Jul-08
DG2732
JESD78
R 2733
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RAYTHEON
Abstract: RMPA29400 2 Watt rf Amplifier power amplifier mmic
Text: Raytheon RMPA29400 RF Components 27-32 GHz 2.8 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features Electrical Characteristics At 25°C 50 Ω system, Vd=+5 V, Quiescent current (Idq) = 1.6 A The RMPA29400 is a high efficiency power amplifier designed for use in point to point radio, point to
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RMPA29400
RMPA29400
RAYTHEON
2 Watt rf Amplifier
power amplifier mmic
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pin diAGRAM OF DB8
Abstract: DA16
Text: APPLICATION NOTE AN–36 THE BiFIFO PARITY GENERATION AND CHECKING Integrated Device Technology, Inc. by John Chen INTRODUCTION An occasional error may be introduced into the information while moving binary words within a digital system or in exchanging words with other systems. One erroneous bit due
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2732 rom
Abstract: a7 moe ram 2732 MN86157 QFP044-P-1010
Text: For Communications Equipment MN86157 Shading Correction LSI Features Choice of correction range 50% or 75% depending on extent of shading distortion Parallel A/D converter functions Resolution: 7 bits A6 A7 A8 A9 A10 A11 N.C. MODE ENBO CKSH ENBI A5 A4 A3
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MN86157
MN86157
QFP044-P-1010
2732 rom
a7 moe
ram 2732
QFP044-P-1010
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2732 rom
Abstract: MN86157 QFP044-P-1010
Text: For Communications Equipment MN86157 Shading Correction LSI Overview Pin Assignment Resolution: 7 bits Non-linearity: ±1/2 LSB Conversion speed: max. 5 MHz Note: This is the guaranteed design value for the chip used as a stand-alone A/D converter. The guaranteed value at shipment is ±3 LSB
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MN86157
2732 rom
MN86157
QFP044-P-1010
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IC 2732
Abstract: intel 2732 pin diagram of ic 2732 2732 memory chip 2732 eprom 2732 EPROM specification intel 2732 eprom 2732 2732 rom eprom 2732
Text: intei 2732 32K 4K x 8 UV ERASABLE PROM Output Enable for MCS-85 and MCS86™ Compatibility Fast Access Time: — 390 ns Max. 2732-4 — 450 ns Max. 2732 — 550 ns Max. 2732-6 Industry Standard Pinout — JEDEC Approved Low Power Dissipation: — 150mA Max. Active Current
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MCS-85â
MCS-86â
150mA
768-bit
3902732s
2732s.
2732s
IC 2732
intel 2732
pin diagram of ic 2732
2732 memory chip
2732 eprom
2732 EPROM specification
intel 2732 eprom
2732
2732 rom
eprom 2732
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nec 2716 eprom
Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Text: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply
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uPD2364
iPD2364
-450ns35PC
2364-30PC
450nsec
350nsec
300nsec
nec 2716 eprom
2364 eprom
NEC 2732
pin diagram of ic 2764
pin diagram of ic 2732
2732 rom
2732 eprom
Electronic Arrays
2732 memory chip
ROM 2764
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intel 2732 eprom
Abstract: intel 2732 2732 eprom IC 2732 pin diagram of ic 2732 pin diagram of ic 2764 4Kx8 rom ttl eprom 2732 ram 2732 2kx8 sram
Text: A O M IN ! OMIF©fôlîMïrD@Kl in te i 2048 X 2K X 8 8-BIT STATIC RAM Fully Static Operation; No Clocks, Refresh or Latches Two Line Control, CE Controls PowerDown, OE Controls Output Buffers — Eliminates Bus Contention EPROM Compatible Pinout 150 ns Maximum Access Time
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24-Pin
384-bit
28-pin
The2732s
2732s.
2732s
intel 2732 eprom
intel 2732
2732 eprom
IC 2732
pin diagram of ic 2732
pin diagram of ic 2764
4Kx8 rom ttl
eprom 2732
ram 2732
2kx8 sram
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27128 eprom
Abstract: 27128 nec UPD23128 EPROM 27128 27128 ROM pin configuration NEC 2764 EPROM
Text: NEC NEC E lectron ics « . a iï f iw r MASK-PROGRAMMABLE NMOSROM Block Diagram Description The J.PD23128A is a 131,072-bit edge-enabled Read only M em ory utilizing MOS N-channel silicon gate technol ogy. The device is organized as 16,384 words by 8 bits and
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uPD23128A
072-bit
200ns
2732s.
2732s
xPD23128AC
23128ADS-884-CAT-L
27128 eprom
27128 nec
UPD23128
EPROM 27128
27128 ROM pin configuration
NEC 2764 EPROM
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intel 2732
Abstract: eprom 2732A 2732A INTEL IC 2732 intel 2732 eprom 2732A-2 ic 2764 rom 2732 eprom pin diagram of ic 2732 2732A
Text: intei 2732 32K 4K x 8 UV ERASABLE PROM Output Enable for MCS-85 and MCS86™ Compatibility Fast Access Time: — 390 ns Max. 2732-4 — 450 ns Max. 2732 — 550 ns Max. 2732-6 Industry Standard Pinout — JEDEC Approved Low Power Dissipation: — 150mA Max. Active Current
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MCS-85â
MCS-86â
150mA
768-bit
390ected
2732As.
2732As
intel 2732
eprom 2732A
2732A INTEL
IC 2732
intel 2732 eprom
2732A-2
ic 2764 rom
2732 eprom
pin diagram of ic 2732
2732A
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programmers 2732
Abstract: et2716 ETC2732Q-45 ETC2732Q-45-V DIP-24 ETC2716 ETC2732Q ETC2732Q-3 M2732A M2732
Text: SGS-THOMSON ETC2732 32K BIT 4K x 8 CMOS UV ERASABLE PROM • CMOS POWER CONSUMPTION: 26.25 mW MAX ACTIVE POWER, 0.53 mW MAX STANDBY POWER ■ 4096 x 8 O R G A N IZ A T IO N ■ PIN COMPATIBLE TO M/ET2716, ETC2716, M2732A, ■ ACCESS TIME DOWN TO 350 ns ■ SINGLE 5V POWER SUPPLY
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ETC2732
M/ET2716,
ETC2716,
M2732A,
ETC2732
DIP-24
ETC2732Q
ETC2732Q-45-V
programmers 2732
et2716
ETC2732Q-45
DIP-24
ETC2716
ETC2732Q-3
M2732A
M2732
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c 50275
Abstract: EPROM 2732 3P41 nec 1 x 40 vacuum fluorescent display JPD7527A P23C EPROM2732 p10j interfacing the 2732 eprom PD7527
Text: ¿ /P D 7 5 2 7 A /2 8 A /7 5 C G 2 8 E 4 -B it, S in g le -C h ip NEC Electronics Inc. Description The JPD7527A, mPD7528A, and mPD75CG28E are 4-bit, single-chip CMOS microcomputers with the piPD7500 architecture and FIP direct-drive capability. The/iPD7527A contains a 2048 x 8-bit ROM and a 128 x
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/PD7527A/28A/75CG28E
JPD7527A,
mPD7528A,
jjPD75CG28E
piPD7500
The/iPD7527A
The/aPD7528A
PD7527A/28A
/jPD7527A/28A
c 50275
EPROM 2732
3P41
nec 1 x 40 vacuum fluorescent display
JPD7527A
P23C
EPROM2732
p10j
interfacing the 2732 eprom
PD7527
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pin diagram of ic 2732
Abstract: 2732 eprom programmers 2732 SGS M2732A Eprom 2732 2732 cmos eprom et2716 DIP-24 ETC2716 ETC2732Q
Text: Æ 7 S C S -T H O M S O N ETC2732 [ ^ a g [ ^ ( ô i[ L [ i T r ( Q ) K ! io © s 32K BIT (4K x 8) CMOS UV ERASABLE PROM • CMOS POWER CONSUMPTION: 26.25 mW MAX ACTIVE POWER, 0.53 mW MAX STANDBY POWER ■ 4096 x 8 ORGANIZZATION ■ PIN COMPATIBLE TO M/ET2716, ETC2716,
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ETC2732
M/ET2716,
ETC2716,
M2732A,
ETC2732
DIP-24
ETC2732Q
ETC2732Q-45-V
pin diagram of ic 2732
2732 eprom
programmers 2732
SGS M2732A Eprom
2732
2732 cmos eprom
et2716
DIP-24
ETC2716
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2732 rom 4K
Abstract: No abstract text available
Text: OKI semiconductor MSM80C51FVS M80C51 PIGGY BACK GENERAL DESCRIPTION The M S M 80 C 5 1 F V S is a d e vice whose b u ilt-in ROM is replaced by e xte rn a l EPROM using the p ig g y-b a ck m ethod. External EPROM ca p a city is up to 4K bytes. It can be used fo r evaluation o f p ro
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MSM80C51FVS
M80C51
2732 rom 4K
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nec 2716 eprom
Abstract: D2732
Text: ñ | à */S NEC Electronic U.S.A. Inc. Electronic Arrays Division_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ NMOS /¿PD2364 N E C Ly *-J w DE ] ELECTRONICS INC ST bME7S2S GGObD^ READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times
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uPD2364
-450nsec
-350nsec
-300nsec
iPD2364
2364-45PC
2364-35PC
2364-30PC
450nsec
350nsec
nec 2716 eprom
D2732
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eprom 2732
Abstract: NEC sl 1000 ports 2732 eprom 2732 EPROM specification 7537A p23c PD7538A interfacing the 2732 eprom PD7500 P112l
Text: j^TT?/”* [y ILK * ¿/PD7537A/38A/75CG38E 4-B it, Singla-Chip N E C E le c t r o n ic s In c . Description The f4PD7537A, ^PD7538A, and pPD75CG38E are 4-bit, single-chip CMOS microcomputers with the f*PD7500 architecture and FIP direct-drive capability. The f<PD7537A contains a 2048 x 8-bit ROM and a
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uPD7537A
uPD7538A
uPD75CG38E
f4PD7537A,
PD7538A,
pPD75CG38E
PD7500
PD7537A
PD7538A
PD7537A/38A
eprom 2732
NEC sl 1000 ports
2732 eprom
2732 EPROM specification
7537A
p23c
interfacing the 2732 eprom
P112l
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d7537
Abstract: pd7538 PD7538A nec pd7538a 7537A EPROM 2732 PD7537 28 pin ceramic dip pin diagram of ic 2732 PD7537A
Text: jk /X Y * i M Zá V //P D 7 5 3 7 A /3 8 A /7 5 C G 3 8 E 4-B it, Single-Chip C M 0S Microcomputers W ith FIP Driver NEC Electronics Inc. Description The fjPD7537A, MPD7538A, and fjPD75CG38E are 4-bit, single-chip C M O S m icrocomputers with the /jPD7500
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uPD7537A
uPD7538A
uPD75CG38E
uPD7500
PD7537A
PD7538A
tiPD75CG38E
piPD7537A/
pP07SCQ38E
P07537*
d7537
pd7538
nec pd7538a
7537A
EPROM 2732
PD7537
28 pin ceramic dip
pin diagram of ic 2732
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NEC 2732
Abstract: 2764 eprom PINOUT 2764 eprom ci 2764 pin diagram of ic 2764 NEC 2764 2764 ROM 2764 2764 pin diagram 2764 rom
Text: |xPD2364E 8,192 X 8-BIT NEC Electronics Inc. m a s k -p r ° g |^ m m a b l e NMOS ROM Revision 2 Pin Configuration Description The H.PD2364E is a 65,536-bit Read-only Memory utilizing NMOS silicon gate technology. The device is static in opera tion, organized as 8,192 words by 8 bits and operates from a
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uPD2364E
PD2364E
536-bit
NEC 2732
2764 eprom PINOUT
2764 eprom
ci 2764
pin diagram of ic 2764
NEC 2764
2764
ROM 2764
2764 pin diagram
2764 rom
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2732 EPROM
Abstract: 2364 eprom 2364 rom
Text: VT2364 PRELIMINARY 8192 x 8 STATIC READ ONLY MEMORY FEATURES DESCRIPTION • 2732 EPROM pin com patible The VT2364 high-perform ance Read Only Memory is organized as 8,192 words by eight bits with an access time of 300 ns. The ROM is designed to be com patible with all micro
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VT2364
VT2364
24-pin
2732 EPROM
2364 eprom
2364 rom
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CL 2181
Abstract: 30 Pinout panel lcd v4nc COM63
Text: SED1191 CMOS LCD 64-COMMON DRIVER • DESCRIPTION The SED1191 is a dot matrix LCD common row driver for driving high-capacity LCD panel at duty cycles higher than 1/64. The LSI uses two serially connected, 32-bit shift registers to hold the display data, and level
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SED1191
64-COMMON
SED1191
32-bit
64-bit
SED1181
CL 2181
30 Pinout panel lcd
v4nc
COM63
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LA 4645
Abstract: No abstract text available
Text: CMOS LCD 64-COMMON DRIVER • DESCRIPTION The SED1191 is a dot matrix LCD common row driver for driving high-capacity LCD panel at duty cycles higher than 1/64. The LSI uses two serially connected, 32-bit shift registers to hold the display data, and level
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64-COMMON
SED1191
32-bit
64-bit
TheSED1191is
SED1181
COM54
LA 4645
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