15356
Abstract: L-15356
Text: Surface Mount Self-Leaded Inductor 150 kHz Electrical Specifications at 25OC. 1 Part Number L with DC ( µH ) L-15356 54 Schematic Diagram Operating Temp. Range: -30OC to +130OC IDC (1) (1) (Amps) E-T Product ( V-µs ) DCR max. (Ω) 1.0 16.2 0.2 1) Typical values for a 55OC Temperature rise at 150 kHz and
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L-15356
-30OC
130OC
15356
L-15356
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N195PH12
Abstract: N086PH12 N0335SP120-160 N170PH12-16 N170PH12 N0131SP120-160 N0180SP120-160 N0290SP120-160 N0416SP020-080 N086PH12-16
Text: Old Part Number N086PH12-16 PDF Data Sheet Available RECTIFIER DEVICE - Phase Control Thyristors - Stud Types N VDRM VRRM Range IT AV at TSINK 25oC IT(RMS) at o TSINK 25 C New Part Number IT at TSINK 25oC Note 5 N0131SP120-160 ITSM(1) 10ms ITSM(2) 10ms VR ≤ 60%
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N086PH12-16
180osine
125oC
N0131SP120-160
125oC)
101A153
146mm
101A225
N195PH12
N086PH12
N0335SP120-160
N170PH12-16
N170PH12
N0131SP120-160
N0180SP120-160
N0290SP120-160
N0416SP020-080
N086PH12-16
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VN02AN
Abstract: CMA2000
Text: VN02AN HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS on I OUT V CC VN02AN 60 V 0.35 Ω 7A 36 V • ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 7A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT
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VN02AN
VN02AN
CMA2000
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P200PH12
Abstract: P202PH12 P205PH12 P214PH006-08 P215PH06-08 P270PH04 p0273sp12 639X P0306SP06x-08x
Text: Old Part Number PDF Data Sheet Available FAST SWITCHING DEVICE - Fast Turn Off Thyristors - Stud Types VDRM VRRM Range Turn-off Time Tq at 200V/µ µs Note 3 Note 4 V (µ µ s) New Part Number ITAV TCASE IT(RMS) at IT at TCASE TCASE 25oC 85oC 55oC ITMS(1) 10ms VR
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125oC
125oC
180osine
125oC)
101A225
P200PH12
P202PH12
P205PH12
P214PH006-08
P215PH06-08
P270PH04
p0273sp12
639X
P0306SP06x-08x
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SB103
Abstract: Edal Series SB103 Silicon Schottky Barrier Rectifiers Schottky
Text: Edal SERIES SB103 Silicon Schottky Barrier Rectifiers ELECTRICAL RATINGS Peak Inverse Voltage Io AMPS @ 95 oC Case 40 VOLTS 25 AMPS Maximum Surge Current Single Cycle Amps 600 AMPS Maximum Forward Drop @ 25oC Case Io Amps Vf Volts 25 AMPS .82 VOLTS Maximum Reverse Current
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SB103
SB103
Edal Series SB103 Silicon Schottky Barrier Rectifiers
Schottky
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125OC
Abstract: MMBT2907LT1
Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range
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MMBT2907LT1
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
CHARA10
125OC
MMBT2907LT1
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DAN217G
Abstract: DAN217
Text: Zowie Technology Corporation Switching Diode Lead free product 3 ANODE CATHODE 1 DAN217G 2 1 3 CATHODE/ANODE 2 SOT-23 MAXIMUM RATINGES At TA = 25oC unless otherwise noted RATINGS Symbol DAN217G UNITS Maximum Recurrent Peak Reverse Voltage VRRM 80 Volts
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DAN217G
OT-23
DAN217
100mA
DAN217G
DAN217
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100MHZ
Abstract: BC858A
Text: BC858A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C
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BC858A
OT-23
OT-23
MIL-STD-202E
100MHZ
BC858A
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9407a
Abstract: BPF-A1340 PL-227 048002
Text: Surface Mount Bandpass Filter 50Ω BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC • • • • Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case
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BPF-A1340+
-55oC
100oC
2002/95/EC)
HQ1157
M121478
EDR-9407AUF1
9407a
BPF-A1340
PL-227
048002
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1SS187
Abstract: No abstract text available
Text: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
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1SS187
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
1SS187
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50MHZ
Abstract: BC808
Text: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range
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BC808
OT-23
150OC
OT-23
MIL-STD-202E
012applications
50MHZ
BC808
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BPF-A127
Abstract: No abstract text available
Text: Surface Mount Bandpass Filter 50Ω BPF-A127+ 118 to 137 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC *Passband rating, derate linearly to 0.25W at 100oC ambient. • •
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BPF-A127+
-55oC
100oC
100oC
2002/95/EC)
HQ1157
M117937
EDR-9028AU
BPF-A127
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1SS193
Abstract: No abstract text available
Text: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
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1SS193
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
1SS193
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BC848C
Abstract: 100MHZ
Text: BC848C SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C
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BC848C
OT-23
OT-23
MIL-STD-202E
BC848C
100MHZ
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Untitled
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR CMPSH-3 TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE FEATURES * Power dissipation P D: 350 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range
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OT-23
-55OC
150OC
OT-23
MIL-STD-202E
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100MHZ
Abstract: FMMT491
Text: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range
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FMMT491
OT-23
OT-23
MIL-STD-202E
100MHZ
FMMT491
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1SS190
Abstract: No abstract text available
Text: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
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1SS190
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
1SS190
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TB 6064
Abstract: BPF-A122
Text: Surface Mount Bandpass Filter 50Ω BPF-A122+ 119 to 125 MHz Maximum Ratings Features o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.3:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC Application
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BPF-A122+
-55oC
100oC
100oC
M102075
EDR-7824U
TB 6064
BPF-A122
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W3743ZC400-500
Abstract: W6262 westcode diodes sw06 W2958NC280-350 100A249 W6262ZC120-240 SW40-50CXC815 w2052NC300 SW16-24CXC380 SW04-15CXC400
Text: Old Part Number PDF Data Sheet Available RECTIFIER DEVICE - Rectifier Diodes - Capsule Types VDRM VRRM Range IF AV @ THS IF(RMS) @ IF @ THS 55oC THS 25oC 25oC IFSM(1) 10ms VR ≤ 60% VRRM IFSM(1) 10ms VR ≤ 10V I2t(2) 10ms IRRM @ Tj Max. Vo r @ Tj Max. Vo
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SW06-15CXC300
W0646WC060-150
100A270
SW14FXC27C
100A293
SW10DXC32C
100A241
100A291
100A317
100A243
W3743ZC400-500
W6262
westcode diodes sw06
W2958NC280-350
100A249
W6262ZC120-240
SW40-50CXC815
w2052NC300
SW16-24CXC380
SW04-15CXC400
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hall sensor 4-pin SIP
Abstract: 24V DC brushless fan regulator circuit AH266 circuit diagram of hall effect
Text: AH266 High Voltage Hall Effect Latch Features General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous, 25oC - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=62V(Typ)
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AH266
400mA
AH266
971mm
046mm
hall sensor 4-pin SIP
24V DC brushless fan regulator circuit
circuit diagram of hall effect
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63b01
Abstract: AC1331 3B01
Text: 3B Series 16 Channel Backplane 3B01 FEATURES Mix and Match 3B Series I/O Module Capability Factory Mutual FM Approved CE Certified +1500 V peak Channel/Channel and Input/Output Isolation -25oC to +85oC Temperature Range LEDs indicate when power is applied
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-25oC
D05407-0-2/05
63b01
AC1331
3B01
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Untitled
Abstract: No abstract text available
Text: RECTRON GMZJ Series SEMICONDUCTOR TECHNICAL SPECIFICATION Micro MELF ZENER DIODE 2.5% 500mW Micro MELF 0.049 1.25 0.047(1.20) 0.008(0.2) 0.079(2.0) 0.071(1.8) Units in mm Absolute Maximun Ratings (Ta=25oC) Symbol Zener Current see Table "Characteristics"
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500mW
100mA
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Untitled
Abstract: No abstract text available
Text: WT-CG1FJ High Power Light Source Product Specification Specification Material Total Flux Minimum 200 lm @ 18 mA/Ta = 25oC Correlated Color Temperature 2400 K~3000 K @ 18 mA/Ta = 25 oC VF Typical 108 V @ 18 mA/ Ta = 25 oC IR WT standard Resin Warm White Tray
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18-Nov-2013
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Untitled
Abstract: No abstract text available
Text: HD, HG, HGE, HGF, HGU-Modular “Hi-Bel” High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number VRRM Avg. Forward Current Max. 'favm '" V Volts V 5 °c A (Amps) Max. Reverse Current Max. Forward Voltage Drop VFCa lF !R •" v rrm 1(1 25oC
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OCR Scan
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18-HGE,
17-HD
27Gbfl4b
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