IC IGBT 25N120
Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12
Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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25N120
25N120D1
O-247
IC IGBT 25N120
25n120 IGBT
25N120
.25N12
25N120D1
FII30-12E
25N120D
25N12
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25N120
Abstract: IC IGBT 25N120 25n120 IGBT D-68623
Text: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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25N120
25N120D1
O-247
25N120
IC IGBT 25N120
25n120 IGBT
D-68623
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25N120
Abstract: 25N120 ixys
Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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25N120
25N120D1
O-247
25N120
25N120 ixys
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IC IGBT 25N120
Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E
Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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25N120
25N120D1
O-247
IC IGBT 25N120
25N120
25n120 IGBT
IXEH 25N120D1
25N120D
25N120 ixys
25N120D1
FII30-12E
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100N120
Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50
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15N120
25N120
50N120
75N120
100N120
150N120
75N170
100N170
100N-120
IC IGBT 25N120
100N170
IC IGBT 15N120
mj 1352
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25N120
Abstract: 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A
Text: Low VCE sat High speed IGBT IXGH 25 N120 IXGH 25 N120A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C
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N120A
O-247
25N120
25N120A
25N120
25N120A
IC IGBT 25N120
.25n120
25N120 ixys
.25N12
MOS-Gated Transistors
N120
92783D
N120A
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25N120
Abstract: IC IGBT 25N120 n120 30 igbt 25N120A N120 IXGH25N120A
Text: Low VCE sat High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES IC25 VCE(sat) 1200 V 1200 V 50 A 50 A 3V 4V Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 V
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N120A
25N120
25N120A
25N120
IC IGBT 25N120
n120 30 igbt
25N120A
N120
IXGH25N120A
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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c2555
Abstract: IC IGBT 25N120 25N120
Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C
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OCR Scan
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25N120
25N120A
25N120A
c2555
IC IGBT 25N120
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Untitled
Abstract: No abstract text available
Text: Low VCE sat High speed IGBT IXGH25N120 IXGH25N120A v CES ^C25 VC E (sat) 1200 V 1200 V 50 A 50 A 3V 4V ^0 Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE= 1 Mi2 1200 V Maximum Ratings v GES Continuous ±20 V V GEM
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OCR Scan
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IXGH25N120
IXGH25N120A
O-247
25N120
25N120A
100nH
D003bS4
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25N120
Abstract: IC IGBT 25N120 ixgh25n120 .25N120
Text: IXGH25N120 IXGH25N120A L O W V CE sa« High speed IGBT V " ces *C25 VCE(sat) 1200 V 1200 V 50 A 50 A 3V 4V Q_ $ Symbol Test Conditions V *CES Tj = 25°C to 150°C 1200 V v CGR Tj = 25°C to 150°C; ReE = 1 MU 1200 V v GES Continuous ±20 V v GEM T ransient
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OCR Scan
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IXGH25N120
IXGH25N120A
O-247
25N120A
25N120A
25N120
IC IGBT 25N120
.25N120
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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