Untitled
Abstract: No abstract text available
Text: RF-13 Rev 25AUG14 BE25S–00SJ7–02.0–02–0305 BE25S–01SP1–02.0–02–0305 BE25S SERIES 50Ω MICROWAVE CABLE ASSEMBLIES SPECIFICATIONS For complete specifications see www.samtec.com?BE25S Mates with: BAR, SMA, SMP, 292PS, BSR High performance 25 AWG
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RF-13
25AUG14)
BE25Sâ
00SJ7â
01SP1â
BE25S
BE25S
292PS,
92SPP
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byw76
Abstract: BYW72
Text: BYW72, BYW73, BYW74, BYW75, BYW76 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and
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BYW72,
BYW73,
BYW74,
BYW75,
BYW76
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYW72
byw76
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1N5062 diode
Abstract: 1N5060 1N5061 1N5061 vishay
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
1N5060
1N5062 diode
1N5061 vishay
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BYV27-200
Abstract: BYV27-50 BYV27-100 BYV27-150 BYV27 BYV-27-100
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV27-50
BYV27-100
BYV27-200
BYV27-150
BYV27
BYV-27-100
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byt54m
Abstract: No abstract text available
Text: BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in
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BYT54A,
BYT54B,
BYT54D,
BYT54G,
BYT54J,
BYT54K,
BYT54M
2002/95/EC
2002/96/EC
OD-57
byt54m
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Untitled
Abstract: No abstract text available
Text: VS-12TQ.PbF Series, VS-12TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 15 A FEATURES Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-12TQ.
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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VS119
Abstract: VS-19TQ015
Text: VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 19 A FEATURES • 125 °C TJ operation VR < 5 V Base cathode 2 • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation TO-220AC
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VS-19TQ015PbF,
VS-19TQ015-N3
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
61249-2trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
VS119
VS-19TQ015
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byv28
Abstract: DIODE BYV28 BYV28-50 BYV28-200
Text: BYV28-50, BYV28-100, BYV28-150, BYV28-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV28-50,
BYV28-100,
BYV28-150,
BYV28-200
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
byv28
DIODE BYV28
BYV28-200
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Untitled
Abstract: No abstract text available
Text: VS-16CTQ.PbF Series, VS-16CTQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 8 A FEATURES Base 2 common cathode • 175 °C TJ operation • Low forward voltage drop • High frequency operation Anode TO-220AB Anode 2 1 Common 3
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VS-16CTQ.
O-220AB
2002/95/EC
JEDEC-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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marking DX DIODE
Abstract: smd marking SOT343 marking 55 Sot-343 dx diode smd SUD493Z DX SOT diode smd marking dx
Text: SUD493Z SWITCHING DIODE Small Signal Fast Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-343 surface mounted device SMD packages. Features and Benefits
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SUD493Z
OT-343
OT-343
25-AUG-10
KSD-D5Q001-001
marking DX DIODE
smd marking SOT343
marking 55 Sot-343
dx diode smd
SUD493Z
DX SOT
diode smd marking dx
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marking j1k
Abstract: SMD CODE marking sot-23 J1K SOT23 SMD diode MARKING CODE 4 SDS19WK
Text: SDS19WK SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits Silicon epitaxial planar diode
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SDS19WK
OT-23
OT-23
25-AUG-10
KSD-D5C031-001
marking j1k
SMD CODE
marking sot-23
J1K SOT23
SMD diode MARKING CODE 4
SDS19WK
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SDS2838EF
Abstract: SMD MARKING P3 smd dual diode code 05
Text: SDS2838EF SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-523F surface mounted device SMD packages. Features and Benefits
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SDS2838EF
OT-523F
OT-523F
25-AUG-10
KSD-D5E002-000
SDS2838EF
SMD MARKING P3
smd dual diode code 05
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J1 SOD323
Abstract: No abstract text available
Text: SDS19D SWITCHING DIODE High Voltage Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOD-323 surface mounted device SMD packages. Features and Benefits Silicon epitaxial planar diode
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SDS19D
OD-323
OD-323
25-AUG-10
KSD-D6C023-001
J1 SOD323
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SMD diode CA6
Abstract: ca6 smd code SMD CA6 diode CA6 DIODE MARKING CODE CA6 SDS2838F KSD-D5C014-002 diode smd CA6 ca6 smd
Text: SDS2838F SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device SMD packages. Features and Benefits
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SDS2838F
OT-23F
OT-23F
25-AUG-10
KSD-D5C014-002
SMD diode CA6
ca6 smd code
SMD CA6
diode CA6
DIODE MARKING CODE CA6
SDS2838F
KSD-D5C014-002
diode smd CA6
ca6 smd
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Untitled
Abstract: No abstract text available
Text: SDS21WK SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits Silicon epitaxial planar diode
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SDS21WK
OT-23
OT-23
25-AUG-10
KSD-D5C028-002
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smd j1a
Abstract: J1A marking
Text: SDS19WA SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits Silicon epitaxial planar diode
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SDS19WA
OT-23
OT-23
25-AUG-10
KSD-D5C030-001
smd j1a
J1A marking
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smd diode marking 5d
Abstract: smd diode 5d smd code marking 5D diode 5d smd SOT-323F 5D DIODE SMD SDS152KF TP5A
Text: SDS152KF SWITCHING DIODE Small Signal Fast Switching Diode General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-323F surface mounted device SMD packages. Features and Benefits y y y y y Silicon epitaxial planar diode
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SDS152KF
OT-323F
OT-323F
25-AUG-10
KSD-D5D004-001
smd diode marking 5d
smd diode 5d
smd code marking 5D
diode 5d smd
SOT-323F
5D DIODE SMD
SDS152KF
TP5A
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SDS19WKF
Abstract: marking j1k
Text: SDS19WKF SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device SMD packages. Features and Benefits
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SDS19WKF
OT-23F
OT-23F
25-AUG-10
KSD-D5C053-000
SDS19WKF
marking j1k
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SDB310WK
Abstract: marking db8 sot23
Text: SDB310WK SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SDB310WK
OT-23
25-AUG-10
KSD-D5C037-001
SDB310WK
marking db8 sot23
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DIODE GE
Abstract: SDB310WMU KSD-D5D017-001
Text: SDB B310W WMU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.
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B310W
OT-323
25-AUG-10
KSD-D5D017-001
DIODE GE
SDB310WMU
KSD-D5D017-001
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marking j3a
Abstract: No abstract text available
Text: SDS20WA SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits Silicon epitaxial planar diode
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SDS20WA
OT-23
OT-23
25-AUG-10
KSD-D5C033-001
marking j3a
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SUB610
Abstract: No abstract text available
Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SUB610
OT-363
25-AUG-10
KSD-D5S004-001
SUB610
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SMD diode CA2
Abstract: ca2 smd code SMD CA2 SDS2836F CA2 smd
Text: SDS2836F SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device SMD packages. Features and Benefits
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SDS2836F
OT-23F
OT-23F
25-AUG-10
KSD-D5C049-000
SMD diode CA2
ca2 smd code
SMD CA2
SDS2836F
CA2 smd
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Untitled
Abstract: No abstract text available
Text: T H IS LOG ÄNDERUNGEN, S C H R IT T HALTEN DIE C O N TRO LLED D O C U M E N T. DEM D E S C R IP T IO N P/N: 826936-4 REACTIVATION DATE DWN A PVD 25AUG1 1H f RP FORT D IE N E N , WIR IS A REVISIONS D IS T LTR T E C H N IS C H E N DRAW IN G UNS POS. BE
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OCR Scan
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25AUG1
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