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    250V 60A MOSFET Search Results

    250V 60A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    250V 60A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AC MOTOR SPEED CONTROL USING IGBT

    Abstract: SMCV6G120
    Text: . SMCV6M120-025, SMCV6M150-010 SMCV6G080-120, SMCV6G120-060 SENSITRON SEMICONDUCTOR DATA SHEET 5324, REV - DIGITAL SPEED CONTROLLER BRUSHLESS DC MOTOR DRIVER MODULE 100V/80A, 250V/60A, 600V/50A, 1200V/40A Features • • • Sinusoidal Sensorless/Resolver/Hall


    Original     		PDF SMCV6M120-025, SMCV6M150-010 SMCV6G080-120, SMCV6G120-060 00V/80A, 50V/60A, 00V/50A, 200V/40A 7-20Khz RS232, AC MOTOR SPEED CONTROL USING IGBT SMCV6G120

    SPM6M080-010D

    Abstract: SPM6M060-025D 010D
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D SPM6M060-025D 010D

    SPM6M080-010D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D

    APT5010JLLU3

    Abstract: No abstract text available
    Text: APT5010JLLU3 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLLU3 E145592 APT5010JLLU3

    UJ-845

    Abstract: MOSFET Module transistor d 1556 APTM50DHM65T
    Text: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives G1 S1 OUT1 OUT2


    Original     		PDF APTM50DHM65T UJ-845 MOSFET Module transistor d 1556 APTM50DHM65T

    BV 726 C 1 Converter

    Abstract: BV 726 B BV 726 C APTM50DHM75T 4 switched reluctance motor miller
    Text: APTM50DHM75T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 G1 S1 OUT1 OUT2 Q4 CR2 G4 0/VBUS SENSE S4 NTC1 0/VBUS VBUS SENSE NTC2 G4 S4 VBUS 0/VBUS S1 0/VBUS SENSE G1 OUT2 OUT1 NTC2 NTC1 VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C


    Original     		PDF APTM50DHM75T BV 726 C 1 Converter BV 726 B BV 726 C APTM50DHM75T 4 switched reluctance motor miller

    APTM50SKM38T

    Abstract: No abstract text available
    Text: APTM50SKM38T Buck chopper MOSFET Power Module VBUS NT C2 Q1 G1 OUT S1 0/VBUS SENSE 0/VBUS 0/VBUS SENSE VBUS S1 G1 0/VBUS 0/VBUS SENSE NTC1 OUT OUT NTC2 NTC1 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • AC and DC motor control


    Original     		PDF APTM50SKM38T APTM50SKM38T

    2482 TRANSISTOR

    Abstract: transistor 2482
    Text: APTM50DAM38T Boost chopper MOSFET Power Module VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • S2 VBUS VBUS SENSE


    Original     		PDF APTM50DAM38T 2482 TRANSISTOR transistor 2482

    Untitled

    Abstract: No abstract text available
    Text: APTM50SKM38T Buck chopper MOSFET Power Module VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • • S1 G1 0/VBUS 0/VBUS SENSE OUT NTC2 Benefits


    Original     		PDF APTM50SKM38T

    tf 115 250v 15a

    Abstract: No abstract text available
    Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75JLLU2 E145592 tf 115 250v 15a

    Untitled

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF Max247 STY60NM50 Max247

    Untitled

    Abstract: No abstract text available
    Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75JLLU2 E145592

    STY60NM50

    Abstract: 250v 60A mosfet
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STY60NM50 Max247 STY60NM50 250v 60A mosfet

    250v 60A mosfet

    Abstract: STY60NM50FD ZVS phase-shift converters welding equipment smps schematic
    Text: STY60NM50FD N-CHANNEL 500V - 0.045Ω - 60A Max247 FDmesh Power MOSFET with FAST DIODE ADVANCED DATA TYPE STY60NM50FD VDSS RDS(on) ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STY60NM50FD Max247 250v 60A mosfet STY60NM50FD ZVS phase-shift converters welding equipment smps schematic

    250v 60A mosfet

    Abstract: Max247 Zener-Protected MDmeshTMPower STY60NM50
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STY60NM50 Max247 250v 60A mosfet Max247 Zener-Protected MDmeshTMPower STY60NM50

    motor DC 400V 1600A

    Abstract: No abstract text available
    Text: APTM50DAM38CT Boost chopper VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C SiC FWD diode MOSFET Power Module NTC2 VBUS SENSE CR1 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features


    Original     		PDF APTM50DAM38CT motor DC 400V 1600A

    Untitled

    Abstract: No abstract text available
    Text: APTM50DHM75T Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C ID = 46A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • •


    Original     		PDF APTM50DHM75T

    APT5010JLL

    Abstract: APT5010JLLU2 0830A
    Text: APT5010JLLU2 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLLU2 E145592 APT5010JLL APT5010JLLU2 0830A

    STY60NM50

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STY60NM50 Max247 STY60NM50

    Untitled

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF Max247 STY60NM50 Max247

    mosfet 60v 60a

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF Max247 STY60NM50 Max247 mosfet 60v 60a

    STE70NM50

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE70NM50 STE70NM50

    mosfet 4430

    Abstract: 4430 MOSFET 600v 60a STY60NM60
    Text: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STY60NM60 Max247 mosfet 4430 4430 MOSFET 600v 60a STY60NM60

    STE70NM50

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE70NM50 STE70NM50