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    250UA Search Results

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    250UA Price and Stock

    Littelfuse Inc 0242.250UAT1

    FUSE CRTRDGE 250MA 250VAC/DC AXL
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    DigiKey 0242.250UAT1 Cut Tape 1,720 1
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    0242.250UAT1 Ammo Pack 500 500
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    • 1000 $2.29817
    • 10000 $2.42352
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    Mouser Electronics 0242.250UAT1 234
    • 1 $4.84
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    Newark 0242.250UAT1 Bulk 172 1
    • 1 $5.27
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    • 100 $3.18
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    RS 0242.250UAT1 Bulk 1
    • 1 $4.58
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    TME 0242.250UAT1 500
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    Bourns Inc MF-R250U-AP

    PTC RESET FUSE 30V 2.5A RADIAL
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    DigiKey MF-R250U-AP Ammo Pack 3,000
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    Avnet Americas MF-R250U-AP Ammo Pack 4 Weeks 3,000
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    Mouser Electronics MF-R250U-AP
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    Newark MF-R250U-AP Reel 3,000
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    Avnet Abacus MF-R250U-AP 7 Weeks 3,000
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    Master Electronics MF-R250U-AP
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    Schneider Electric JLS36250UARD20

    MOLDED CASE CIRCUIT BREAKER 600V
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    DigiKey JLS36250UARD20 Box 1
    • 1 $10325.03
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    Teledyne e2v QP27C256-250/UA

    PROM, UV ERASABLE, 32K X 8, 250 NS ACCES - Rail/Tube (Alt: QP27C256-250/UA)
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    Avnet Americas QP27C256-250/UA Tube 250
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    Bourns Inc MF-RX014/250U-A5-0

    PTC Resettable Fuse 60VDC Bulk - Bulk (Alt: MF-RX014/250U-A5-0)
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    Avnet Americas MF-RX014/250U-A5-0 Bulk 2,500
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    Mouser Electronics MF-RX014/250U-A5-0
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    • 10000 $0.403
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    Master Electronics MF-RX014/250U-A5-0
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    Find more 250UA price and stock on Findchips.com

    250UA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N4103 Nom zener voltage:9.1V; low level zener diode low current: 250uA - low noise 1. Page 1 of 1 Enter Your Part # Home Part Number: 1N4103 Online Store 1N4103 Diodes Nom zener voltage:9.1V; low level zener diode low Transistors current: 250uA - low noise


    Original     		PDF 1N4103 250uA 1N4103 DO-204AA com/1n4103

    B08 REGULATOR

    Abstract: 7440430022 TS3410 inductor switching mosfet pwm schematic buck converter
    Text: TS3410 1A / 1.4MHz Synchronous Buck Converter SOT-25 Pin Definition: 1. EN 2. Ground 3. Switching Output 4. Input 5. Feedback General Description TS3410 is a high efficiency monolithic synchronous buck regulator using a constant frequency, current mode architecture. The device is available in an adjustable version. Supply current with no load is 250uA and drops to <1uA


    Original     		PDF TS3410 OT-25 TS3410 250uA B08 REGULATOR 7440430022 inductor switching mosfet pwm schematic buck converter

    Untitled

    Abstract: No abstract text available
    Text: ICE15N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE15N65FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE22N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE22N60W 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE13N65FP 250uA O-220 0E-06 0E-04 0E-02 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE8N70FP 250uA O-220 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE4N73D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 730V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE4N73D 250uA O-252 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE15N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.23Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE15N60W 250uA O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE6N70FP 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE60N150 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N150 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE4N70 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE60N130FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 23A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N130FP 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    ADM692

    Abstract: ADM693 ADM694 ADM695 ADM696 ADM697 ADM698 ADM699 ADM690 ADM691
    Text: MICROPROCESSOR SUPERVISORY CIRCUITS RESET GENERATORS Vcc Range Vbatt Range Max BATTERY SWITCH MODE Write Vcc Mode Vbb Mode Vbb Low Low Power Power Protect Vout Vout Vout Indicator Line Line Fail Fail CE Iout=1mA Iout=100mA Iout=250uA Input Output Indicator Threshold Delay


    Original     		PDF 100mA 250uA ADM696 ADM697 ADM698 ADM699 ADM690 ADM691 ADM692 ADM693 ADM692 ADM693 ADM694 ADM695 ADM696 ADM697 ADM698 ADM699 ADM690 ADM691

    MX23C3210

    Abstract: No abstract text available
    Text: PRELIMINARY MX23C3210 INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating:60mA - Standby:250uA


    Original     		PDF MX23C3210 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 D15/A-1 PM0526 MX23C3210

    Untitled

    Abstract: No abstract text available
    Text: ICE60N600D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 7A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.52Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N600D 250uA O-252 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE22N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE22N60 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE6N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE6N70 250uA O-220 16Forward 100us 0E-06 0E-05 0E-04 0E-03 0E-02

    Untitled

    Abstract: No abstract text available
    Text: ICE60N800D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 5A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE60N800D 250uA O-252 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE15N73FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE15N73FP 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE15N73 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE15N73 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE10N60 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23C321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating :60mA - Standby:250uA


    OCR Scan     		PDF MX23C321 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 A0-A20 D0-D14

    1n4101-1

    Abstract: 1N4627
    Text: Xw SGS-THOMSON iHG 1N 4614->1 N 4627 1N 4 0 9 9 - 1N 4118 ZENER DIODES • VOLTAGE RANGE : 1,8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak­ age low noise. Zener impedance and Zener voltage specified for low level operation at lzt = 250uA.


    OCR Scan     		PDF 250mW 250uA. 1n4101-1 1N4627

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX230321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max. • Current - Operating:60mA - Standby:250uA


    OCR Scan     		PDF MX230321 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 150ns 44pinSOP A0-A20