Untitled
Abstract: No abstract text available
Text: r r i ri0 \B TECHNOLOGY LT1246/LT1247 1MHz Off-Line Current M ode PWM and DC/DC Converter f€OTUR€S D C S C R IP T IO n • Current Mode Operation to 1MHz ■ 30ns Current Sense Delay ■ < 250jli.A Low Start-Up Current ■ Current Sense Leading Edge Blanking
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LT1246/LT1247
250ji
UC1842
1246/LT1247
LT1105
LT1170/LT1171/LT1172
100kHz
LT1241-5
500kHz
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HM-6505
Abstract: HM-6505-5 HMB505B
Text: H S L S L S l! A R R IS H M -6 5 0 5 SE M IC O N D U C T O R P R O D UCT S DIVISION A DIVISION OF MARAIS CORPORATION 4096 X 1 C M O S R A M Advance Information Pinout Features TOP V IE W • LO W POWER S T A N D B Y 250JLIW M A X . • LO W POWER O P E R A T IO N
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HM-6505
250JLIW
35mW/MHz
200ns
HM-6505
HM-6505-5
HMB505B
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Untitled
Abstract: No abstract text available
Text: SFW/I9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V
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SFW/I9Z24
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Untitled
Abstract: No abstract text available
Text: SFP9520 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In = -1 0 0 V 0 -6 & -6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area
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SFP9520
O-220
-100V
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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SFR/U9214
-250V
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Untitled
Abstract: No abstract text available
Text: SFP9510 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n In = -1 0 0 V 1 -2 Q -3 .6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area
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SFP9510
O-220
-100V
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Untitled
Abstract: No abstract text available
Text: B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = o ■ cn CO Avalanche Rugged Technology II ■ - o CD I FEATURES V o cn SFS9Z14 Advanced Power MOSFET Q. A ■ 175°C Operating Temperature ■ Extended Safe Operating Area
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SFS9Z14
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Untitled
Abstract: No abstract text available
Text: S F W /I9 52 0 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology R DS on = ■ Lower Input Capacitance In = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
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-100V
SFW/I9520
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Untitled
Abstract: No abstract text available
Text: S F W /I9 6 3 0 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 0 0 V ^D S o n - 0 -8 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V
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-200V
SFW/I9630
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Untitled
Abstract: No abstract text available
Text: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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SFR/U9224
-250V
200nF>
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C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition
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Untitled
Abstract: No abstract text available
Text: SFR/U9120 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -1 0 0 V ^D S o n - 0 -6 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V
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SFR/U9120
-100V
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Untitled
Abstract: No abstract text available
Text: S F W /I9 5 1 0 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -100V
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-100V
SFW/I9510
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Untitled
Abstract: No abstract text available
Text: SFP9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - 0 . 2 8 Q. In = -9.7 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area
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SFP9Z24
O-220
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Untitled
Abstract: No abstract text available
Text: SFW/I9Z14 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V
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SFW/I9Z14
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Untitled
Abstract: No abstract text available
Text: SFR/U9110 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V
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SFR/U9110
-100V
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irf9640n
Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Text: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A
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IRF9640
-200V
O-220
1RF9640S
irf9640n
1RF9640
422B
D66A
IRF9640S
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Untitled
Abstract: No abstract text available
Text: SFR/U9024 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -6 0 V ^D S o n - 0.28 Q. In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -60V
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SFR/U9024
Gate-12.
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SFP9614
Abstract: No abstract text available
Text: SFP9614 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 5 0 V ^ D S o n = 4 . 0 £2 lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : -1 0 |^A (M a x.) @ V DS = -250V
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SFP9614
-250V
SFP9614
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Untitled
Abstract: No abstract text available
Text: SFS9520 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ 175°C Operating Temperature ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -100V
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SFS9520
-100V
0-220F
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Untitled
Abstract: No abstract text available
Text: B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = o ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -60V ■ Lower RDS(ON) ■ cn CO Avalanche Rugged Technology
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SFR/U9014
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Untitled
Abstract: No abstract text available
Text: S F W /I9 61 4 Advanced Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = -250V
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-250V
SFW/I9614
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Untitled
Abstract: No abstract text available
Text: SFS9630 Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V
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SFS9630
-200V
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Untitled
Abstract: No abstract text available
Text: - o BVDSS CD 1 FEATURES V o cn SFP9Z14 Advanced Power MOSFET Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = -6-7 A ■ 175°C Opereting Temperature ■ Extended Safe Operating Area
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SFP9Z14
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