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    2500V POWER DIODE Search Results

    2500V POWER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2500V POWER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V


    Original     		PDF CM800HA-50H

    CM1200HC-50H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-50H ● IC . 1200A ● VCES . 2500V


    Original     		PDF CM1200HC-50H CM1200HC-50H

    CM800HA-50H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V


    Original     		PDF CM800HA-50H CM800HA-50H

    CM1200HA-50H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V


    Original     		PDF CM1200HA-50H CM1200HA-50H

    CM800HA-50H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V


    Original     		PDF CM800HA-50H 18SULATED 018K/W 036K/W CM800HA-50H

    CM1200HA-50H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V


    Original     		PDF CM1200HA-50H 012K/W 024K/W CM1200HA-50H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V


    Original     		PDF CM1200HA-50H

    CM400DY-50H

    Abstract: 3400 transistor
    Text: MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H ● IC . 400A ● VCES . 2500V


    Original     		PDF CM400DY-50H CM400DY-50H 3400 transistor

    nf 0036 diode

    Abstract: CM400DY-50H
    Text: MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H ● IC . 400A ● VCES . 2500V


    Original     		PDF CM400DY-50H nf 0036 diode CM400DY-50H

    ESM6045DV

    Abstract: isotop bipolar 3845A v120t
    Text: ESM6045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM6045DV ESM6045DV isotop bipolar 3845A v120t

    esm3030dv

    Abstract: No abstract text available
    Text: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM3030DV esm3030dv

    ESM2012DV

    Abstract: No abstract text available
    Text: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM2012DV ESM2012DV

    ESM4045DV

    Abstract: ESM4045DV, motor
    Text: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM4045DV ESM4045DV ESM4045DV, motor

    ESM6045DV

    Abstract: schematic diagram UPS 600 Power free
    Text: ESM6045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM6045DV ESM6045DV schematic diagram UPS 600 Power free

    esm3030dv

    Abstract: transistor AC 307 MS10A
    Text: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM3030DV 15SGS-THOMSON esm3030dv transistor AC 307 MS10A

    ESM5045DV

    Abstract: No abstract text available
    Text: ESM5045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM5045DV ESM5045DV

    MFC40

    Abstract: No abstract text available
    Text: MFC40 Thyristor/Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with Increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter


    Original     		PDF MFC40 MFC40-12-223F3TD MFC40-14-223F3TD MFC40-16-223F3TD MFC40-18-223F3TD MFC40

    MDC570

    Abstract: No abstract text available
    Text: MDC570 Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter VRSM


    Original     		PDF MDC570 MDC570-12-416F3 MDC570-14-416F3 MDC570-16-416F3 MDC570-18-416F3 570/1800V 416F3 MDC570

    MDC200

    Abstract: No abstract text available
    Text: MDC200 Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter VRSM


    Original     		PDF MDC200 MDC200-12-216F3 MDC200-14-216F3 MDC200-16-216F3 MDC200-18-216F3 216F3 MDC200

    esm2012dv

    Abstract: No abstract text available
    Text: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM2012DV esm2012dv

    ESM4045DV

    Abstract: 0322AG
    Text: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM4045DV ESM4045DV 0322AG

    Untitled

    Abstract: No abstract text available
    Text: ESM3045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM3045DV

    ESM4045DV

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ ESM4045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT


    OCR Scan     		PDF ESM4045DV ESM4045DV

    ic Lb 598 d

    Abstract: ESM6045DV
    Text: FZ7 SGS-THOMSON *> 7 # ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF 6045DV ESM6045DV ic Lb 598 d ESM6045DV