Untitled
Abstract: No abstract text available
Text: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2
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20H90CT
20H100CT
O-220AB
ITO-220AB
MBR20H90CT
MBR20H100CT
MBRF20H90CT
MBRF20H100CT
O-263AB
J-STD-020C,
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V60100C
Abstract: No abstract text available
Text: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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V60100C
O-220AB
2002/95/EC
2002/96/EC
08-Apr-05
V60100C
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MC9S12XF512RMV1
Abstract: S12XF temperature controller CHB 401 asea MBT 225 PMF15B6C MC9S12XF256 P112l ifr 2310 Operating Manual ASEA motor b3 freescale superflash
Text: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512RMV1 Rev.1.20 10-Nov-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most
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MC9S12XF512
MC9S12XF512
MC9S12XF384
MC9S12XF256
MC9S12XF128
MC9S12XF512RMV1
10-Nov-2010
MC9S12XF512V1RM
02-Nov-2010
MC9S12XF512RMV1
S12XF
temperature controller CHB 401
asea MBT 225
PMF15B6C
MC9S12XF256
P112l
ifr 2310 Operating Manual
ASEA motor b3
freescale superflash
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292D3
Abstract: No abstract text available
Text: 292D Vishay Sprague Solid Tantalum Chip Capacitors, TANTAMOUNT Lead Frameless Molded FEATURES • 0805 Footprint • Wraparound lead Pb -free terminations: P and R Cases Pb-free Available • 8 mm, 12 mm, 16 mm tape and reel packaging available per EIA-481-1 and reeling per IEC
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EIA-481-1
08-Apr-05
292D3
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Untitled
Abstract: No abstract text available
Text: UG F,B 8HCT & UG(F,B)8JCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency
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O-220AB
ITO-220AB
J-STD-020C,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
08-Apr-05
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SC-89
Abstract: Si1072X S-61291
Text: Si1072X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.093 at VGS = 10 V 1.3a 0.129 at VGS = 4.5 V 1.2 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 5.41 RoHS APPLICATIONS
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Si1072X
SC-89
Si1072X-T1-E3
08-Apr-05
SC-89
S-61291
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Si1056X
Abstract: SC-89
Text: Si1056X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS
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Si1056X
SC-89
Si1056X-T1-E3
08-Apr-05
SC-89
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SC-89
Abstract: SI1070X
Text: Si1070X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.099 at VGS = 4.5 V 1.2a 0.140 at VGS = 2.5 V 1.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.5 RoHS APPLICATIONS
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Si1070X
SC-89
Si1070X-T1-E3
08-Apr-05
SC-89
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9S12XEP100
Abstract: DELAY code for MC9S12XEP100 S12XMPUV1 9S12XEP768 9S12XE S12XMMCV4 ADC12B16C example MC9S12XEP100 MC9S12XE100 9S12x
Text: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12 Microcontrollers MC9S12XEP100 Rev. 1.02 11/2006 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
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MC9S12XEP100
MC9S12XE
HCS12
9S12XEP100
DELAY code for MC9S12XEP100
S12XMPUV1
9S12XEP768
9S12XE
S12XMMCV4
ADC12B16C
example MC9S12XEP100
MC9S12XE100
9S12x
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manual temperature controller CHB 702
Abstract: MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference
Text: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.17 02-October-2008 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most
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MC9S12XF512
MC9S12XF384
MC9S12XF256
MC9S12XF128
MC9S12XF512V1RM
02-October-2008
manual temperature controller CHB 702
MC9S12XF
asea MBT 160
S12XF256
NVP 1204
1M64J
S12XF384
transistor f a614 729 PIN CONFIGURATION
2M64J
Logic Cross-Reference
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Untitled
Abstract: No abstract text available
Text: Si7447ADP Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 30 0.0065 at VGS = - 10 V - 35 100 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 RoHS COMPLIANT S • Battery and Load Switching
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Si7447ADP
Si7447ADP-T1-E3
18-Jul-08
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74172
Abstract: No abstract text available
Text: SPICE Device Model SUM90P10-19 Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM90P10-19
18-Jul-08
74172
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Si5947DU
Abstract: 74174
Text: SPICE Device Model Si5947DU Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5947DU
18-Jul-08
74174
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74179
Abstract: Si7858ADP
Text: SPICE Device Model Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7858ADP
18-Jul-08
74179
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PLD-10
Abstract: No abstract text available
Text: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12 Microcontrollers MC9S12XEP100 Rev. 1.07 05/2007 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
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MC9S12XEP100
MC9S12XE
HCS12
PLD-10
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P112l
Abstract: MC9S12XF MC9S12XF512V1RM freescale user manuals of MC9S12XF512 MC9S12XF512 motor driver ic 7324 1218 footprint IPC IFR 740 freescale superflash S12X
Text: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.19 18-May-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most
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MC9S12XF512
MC9S12XF512
MC9S12XF384
MC9S12XF256
MC9S12XF128
MC9S12XF512V1RM
18-May-2010
P112l
MC9S12XF
MC9S12XF512V1RM
freescale user manuals of MC9S12XF512
motor driver ic 7324
1218 footprint IPC
IFR 740
freescale superflash
S12X
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74282
Abstract: SI7430DP Si7430DP-T1-E3
Text: Si7430DP Vishay Siliconix New Product N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested
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Si7430DP
Si7430DP-T1-E3
08-Apr-05
74282
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MBR30H35CT
Abstract: No abstract text available
Text: MBR F,B 30H35CT thru MBR(F,B)30H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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30H35CT
30H60CT
O-220AB
ITO-220AB
MBR30HxxCT
MBRF30HxxCT
O-263AB
J-STD-020C,
O-220AB
MBR30H35CT
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MBR20H35CT
Abstract: No abstract text available
Text: MBR F,B 20H35CT thru MBR(F,B)20H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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20H35CT
20H60CT
O-220AB
ITO-220AB
MBR20HxxCT
MBRF20HxxCT
J-STD-020C,
O-263AB
O-220AB
ITO-220AB
MBR20H35CT
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Untitled
Abstract: No abstract text available
Text: 1N914 Vishay Semiconductors Fast Switching Diodes Features • • • • • • Fast switching speed High reliability e2 High conductance For general purpose switching applications Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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1N914
2002/95/EC
2002/96/EC
TR/10
TAP/10
1N914
1N914-TR
1N914-TAP
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability
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O-220AB
ITO-220AB
O-263AB
J-STD-020C,
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: UG F,B 18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop
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18ACT
18DCT
O-220AB
ITO-220AB
UG18xCT
UGF18xCT
O-263AB
J-STD-020C,
O-220AB
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. GP REVISIONS DIST 00 LTR L DESCRIPTION REVISED PER E C O - 0 5- 010789 DATE DWN APVD 24JUL06 BM SS 14.00 0 .80 TYP 2 .79
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ECO-05-010789
24JUL06
09MAR05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 - ALL RIGHTS RESERVED. LOC DIST GP 00 REVISIONS LTR M AMP PART NO D DATE CODE A 18.60 [0.732] AMP LOGO DATE DWN 24JUL06 REVISED PER ECN 0S 13 - 0 1 6 6 - 0 5
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24JUL06
31MAR2000
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