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Destaco DPL-3230-NS PARALLEL GRIPPER,DIRECT CONNECT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DPL-3230-NS	Ammo Pack			1	1 $1928 10 $1928 100 $1928 1000 $1928 10000 $1928	Buy Now
Halo Electronics Inc TGM-230NSLF ISO MOD DC MAX253 4C:3C 11VUS 6P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TGM-230NSLF	Tube			620	1 - 10 - 100 - 1000 $1.469 10000 $1.469	Buy Now
Avnet Americas	TGM-230NSLF	Tube			620	1 - 10 - 100 - 1000 $1.26 10000 $1.152	Buy Now
Mouser Electronics	TGM-230NSLF		40			1 $4.5 10 $4.5 100 $1.92 1000 $1.39 10000 $1.21	Buy Now
Halo Electronics Inc TGM-230NSRL ISO MOD DC MAX253 4C:3C 11VUS 6P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TGM-230NSRL	Tube			620	1 - 10 - 100 - 1000 $1.53984 10000 $1.53984	Buy Now
Avnet Americas	TGM-230NSRL	Tube			620	1 - 10 - 100 - 1000 $1.33 10000 $1.216	Buy Now
Mouser Electronics	TGM-230NSRL		200			1 $4.75 10 $4.75 100 $2.02 1000 $1.46 10000 $1.27	Buy Now
Halo Electronics Inc TGM-230NSLFTR ISO MOD DC MAX253 4C:3C 11VUS 6P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TGM-230NSLFTR	Reel			1,000	1 - 10 - 100 - 1000 $1.48001 10000 $1.48001	Buy Now
Avnet Americas	TGM-230NSLFTR	Reel			1,000	1 - 10 - 100 - 1000 $1.34478 10000 $1.2032	Buy Now
Mouser Electronics	TGM-230NSLFTR					1 - 10 - 100 - 1000 $1.39 10000 $1.26	Get Quote
Halo Electronics Inc TGM-230NSRLTR ISO MOD DC MAX253 4C:3C 11VUS 6P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TGM-230NSRLTR	Reel			1,000	1 - 10 - 100 - 1000 $1.54934 10000 $1.54934	Buy Now
Avnet Americas	TGM-230NSRLTR	Reel			1,000	1 - 10 - 100 - 1000 $1.41631 10000 $1.2672	Buy Now
Mouser Electronics	TGM-230NSRLTR					1 - 10 - 100 - 1000 $1.46 10000 $1.32	Get Quote

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230NS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
schematic diagram UPS 600 Power free Abstract: schematic diagram UPS SanRex welding rectifier schematic 150a power supply dc welding circuit diagram dc welding machine circuit diagram NY Series sanrex Welding machine circuit diagram DCA150AA60 Text: SanRex Soft Recovery Diode DCA150AA50/60 IF AV = 150A, VRRM=600V trr=230ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA150AA series is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for	Original	PDF	DCA150AA50/60 230ns, DCA150AA O-240 E76102 co-1313 00A/Fs schematic diagram UPS 600 Power free schematic diagram UPS SanRex welding rectifier schematic 150a power supply dc welding circuit diagram dc welding machine circuit diagram NY Series sanrex Welding machine circuit diagram DCA150AA60
LMV331 Abstract: MAX9030 MAX9031 na3x MAX903X Text: SHATTERING COMPARATOR STANDARDS FOR SPEED, POWER, AND PACKAGING 230ns SPEC fast 600ns slow ns 0 100 200 300 400 500 600 230 600 ICC @ 5V 55µA 120µA Shutdown Current 1µA None Hysteresis 4mV None Price* $0.26 $0.26 700 SUPPLY CURRENT µA CONSUME 2.0x LESS CURRENT	Original	PDF	230ns LMV331 MAX9031 MAX9030 LMV33x 600ns MAX903x MAX9075/9077 LMV331 MAX9030 MAX9031 na3x MAX903X
No 42 G30N60C3D Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss	Original	PDF	HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
Untitled Abstract: No abstract text available Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC	Original	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S O-220AB 230ns 150oC O-262AA HGT1S12N60C3
DC chopper Abstract: DCA150AA60 SanRex Text: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA150AA50/60 VRRM=500/600V, IFAV =150A, trr=230ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA150AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber	Original	PDF	DCA150AA50/60 500/600V, 230ns, DCA150AA E76102 00A/Fs DC chopper DCA150AA60 SanRex
IS456 Abstract: No abstract text available Text: IS456 IS456 High Speed Response Type OPIC Light Detector • Features ■ Outline Dimensions 0.25 3 2 ■ Applications 3.81 ± 0.3 4 Detector center 5.0 ± 0.1 1 Unit : mm 2.5 ± 0.2 + 0.7 0.4 - 0.3 0.1 1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible	Original	PDF	IS456 230ns 780nm IS456
B456 F 15 Abstract: B456 1S456 IS456 50n25 Text: 1S456 1S456 Huh Speed Res~se Type OPIC Light Detector • F-ras 1. High speed response b~~ : TYP.230ns 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ¤ouuina~ (Unit : mm) ■ Amti	Original	PDF	1S456 230ns) IS456 B456 F 15 B456 1S456 IS456 50n25
g30n60c3d Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating	Original	PDF	HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. 1-800-4-HARRIS g30n60c3d G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 N-channel enhancement 200V 60A
51k diode Abstract: IS456 Text: IS456 IS456 High Speed Response Type OPIC Light Detector • Features ■ Outline Dimensions 0.25 3 2 ■ Applications 3.81 ± 0.3 4 Detector center 5.0 ± 0.1 1 Unit : mm 2.5 ± 0.2 + 0.7 0.4 - 0.3 0.1 1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible	Original	PDF	IS456 230ns 780nm 51k diode IS456
g30n60c3 Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60 Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating	Original	PDF	HGTG30N60C3 230ns 150oC O-247 HGTG30N60C3 150oC. g30n60c3 TA49051 igbt g30n60c3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
Untitled Abstract: No abstract text available Text: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA1 5 0 AA5 0 /6 0 VRRM=500/600V, IFAV =150A, trr=230ns, Softness=0.8 Sa nRe x Soft Recovery Diode Module DCA150AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber	Original	PDF	500/600V, 230ns, DCA150AA E76102 in-25) 00A/Fs
APT30F50B Abstract: APT30F50S MIC4452 Text: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft	Original	PDF	APT30F50B APT30F50S 230ns APT30F50B APT30F50S MIC4452
transistor 1354 Abstract: LT1354CN8 1354 LT1354 LT1354CS8 LT1357 LT1365 Text: LT1354 12MHz, 400V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1354 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1354 has much lower supply current, lower	Original	PDF	LT1354 12MHz, LT1354 120kHz LT1355/LT1356 LT1357 25MHz, LT1358/LT1359 transistor 1354 LT1354CN8 1354 LT1354CS8 LT1357 LT1365
p12n60c3 Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123 Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123

cmkm Abstract: OPA605 KS 2152 OPA80 Text: B U R R -B R O W N OPA6Q5 ] Wideband Fast-Settling OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • FAST SETTLING: 230nsec typ to 0.01% • PULSE AMPLIFIERS • WIDE BANDWIDTH: 200MHz Galn-Bandwidth Product • FAST D/A CONVERTERS • FAST SLEWING: 300V//usoc slow rate, Acl > 50	OCR Scan	PDF	230nsec 200MHz 00V//Â 50tyiV PH0T0DI00E OPA605 cmkm KS 2152 OPA80
Untitled Abstract: No abstract text available Text: BURR-BROW N [ O PA605 ] là Wideband Fast-Settling O P E R A TIO N A L AMPLIFIER FEATURES APPLICATIO NS • FA S T S E T T LIN G : 230nsec typ to 0.01% • P U LS E A M P LIFIER S • W IDE BANDW IDTH: 200MHz Gain-Bandwidth Product • FA S T D/A C O N VER TER S	OCR Scan	PDF	OPA605 230nsec 200MHz 500//V
Untitled Abstract: No abstract text available Text: SHARP IS456 IS456 High Speed Response Type OPIC Ught Detector • Feature« ■ Outfne Dknenskxis U nit : m m 1. High speed response (tm : TYP.230ns) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package	OCR Scan	PDF	IS456 230ns)
Untitled Abstract: No abstract text available Text: OPA605 B U R R -B R O W N ; E 1 Wideband Fast-Settling OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • FAST SETTLING: 230nsec typ to 0.01% • PULSE AM PLIFIERS • WIDE BANDWIDTH: 200MHz Giln-Bindwfdth Product • FAST D/A CONVERTERS • FAST SLEWING: 300V//iSOC law rite. A * > 50	OCR Scan	PDF	OPA605 230nsec 200MHz 00V//iSOC OPA605
km41256 dram Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D Text: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A	OCR Scan	PDF	KM41256A/KM41257A 256Kx KM41256/7A-10 100ns 200ns KM41256/7A-12 120ns 230ns KM41256/7A-15 150ns km41256 dram KM-41256 km41256 KM41256A-10 KM41257A TRCD D
KM41256 Abstract: 30 pin SIP dram memory 256KX8 SIMM Text: KMM48256/KMM48257 KM M58256/KM M58257 MEMORY MODULES 2 5 6 K x 8 Bit DRAM Memory Modules SIP/SIMM GENERAL DESCRIPTION FEATURES • 262,144 x 8-bit Organization • Performance range: • • • • • • • tRAC tcAc Í rc K M M48256/7-12 120ns 60ns 230ns	OCR Scan	PDF	M48256/KM M48257 KMM58256/KMM58257 256Kx8 M48256/7-12 120ns 230ns KMM58256/7-12 KM41256 30 pin SIP dram memory 256KX8 SIMM
Untitled Abstract: No abstract text available Text: SMAH9P IS456 High Speed Response Type OPtC Light Detector IS456 IOutline Dimensions • Features U n it: mm 1. High speed response (tpm.: TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation o f the semiconductor laser spot. D etector	OCR Scan	PDF	IS456 230ns
TRANSISTOR D206 Abstract: 8512A transistor D209 LA 8512 TC51V8512 Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F	OCR Scan	PDF	TC51V8512AF/AFT/ATR-12/15 D-212 D-213 TRANSISTOR D206 8512A transistor D209 LA 8512 TC51V8512
of half subtractor ic Abstract: AD369AM ic for half subtractor Text: A N A LO G D EVICES Complete Programmable Gain 12-Bit Data Acquisition System AD369 FEATURES Includes: Programmable Gain Instrumentation Amplifier, Track and Hold Amplifier 12-Bit A/D Converter Digitally Controlled Gain 1,10,100, 500 50kHz Throughput Rate	OCR Scan	PDF	12-Bit 50kHz 28-Pin 775mW AD369 AD369 150pF) of half subtractor ic AD369AM ic for half subtractor
memory samsung Abstract: No abstract text available Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM	OCR Scan	PDF	KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung

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230NS Search Results

230NS Price and Stock

Destaco DPL-3230-NS

Halo Electronics Inc TGM-230NSLF

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230NS Datasheets Context Search

schematic diagram UPS 600 Power free

LMV331

No 42 G30N60C3D

Untitled

DC chopper

IS456

B456 F 15

g30n60c3d

51k diode

g30n60c3

Untitled

APT30F50B

transistor 1354

p12n60c3

cmkm

Untitled

Untitled

Untitled

km41256 dram

KM41256

Untitled

TRANSISTOR D206

of half subtractor ic

memory samsung