Untitled
Abstract: No abstract text available
Text: Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.5 0.022 @ VGS = 2.5 V
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Si6880EDQ
S-04880â
22-Oct-01
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IC 566 vco
Abstract: power tr unit j122 J122 transistor transistor j122 MLF32 PCS30 T0345 56638 Infineon 77 GHz VCO
Text: Features • • • • • • Supply-voltage range 2.7 V to 3.3 V Single sideband upconverters save filter cost Chosen architecture needs only one synthesizer 100 dB control range of IF & RF -VGAs 105 mA current consumption Programmable output power: PCS band: 8 dBm @ 54 dBc APCR, cellular band: 9 dBm
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MLF32
22-Oct-01
IC 566 vco
power tr unit j122
J122 transistor
transistor j122
PCS30
T0345
56638
Infineon 77 GHz VCO
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Si7404DN
Abstract: No abstract text available
Text: Si7404DN New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile VDS (V) rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 13.3 30
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Si7404DN
07-mm
S-04888--Rev.
22-Oct-01
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PLCC
Abstract: PLCC-40 plcc-68 plcc 68
Text: 28 pins PLCC Plastic Lead Chip Carrier PLCC Package Outlines Code: SI Date: 12/05/95 – 22-Oct-01 1 PLCC 40 pins PLCC Code: SL Date: 12/12/95 2 – 22-Oct-01 52 pins PLCC Code: S3 Date: 13/02/01 3 PLCC – 22-Oct-01 PLCC 68 pins PLCC Code: SM Date: 22/03/00
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22-Oct-01
PLCC
PLCC-40
plcc-68
plcc 68
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DIL24
Abstract: DIL package DIL-24
Text: 24 pins PDIL Dual In Line DIL Package Outlines Code: 3Z Date: 22/10/93 – 22-Oct-01 1 DIL 24 pins CDIL with window Code: CZ Date: 21/08/00 2 – 22-Oct-01 40 pins PDIL Code: 3C Date: 09/01/98 3 DIL – 22-Oct-01
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22-Oct-01
DIL24
DIL package
DIL-24
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix SSOP: 28−LEAD See Note 6 0.30"0.05 Ĭ1.5 2.0"0.1 See Note 1 0.1 *0.0 4.0 A E 2.3 F See Note 6 W B0 B B SECTION A-A A Ĭ1.50 MIN A0 12.0 R 0.5 TYP 5.82 K1 K0 0.6 R 0.3 MAX SECTION B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.
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28-LEAD
T-01227--Rev.
22-Oct-01
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6822
Abstract: transistor 6822 transistors 6822 VC-800
Text: Product Data Sheet VC-800 Voltage Controlled Crystal Oscillator Features • Worlds Smallest VCXO, 5.0 x 3.2 x 1.5 mm • High Frequencies to 51.84 MHz • 5 or 3.3 V operation • Linearity ≤10% • Tri-State Output • Low jitter < 6ps rms • VCXO with CMOS outputs
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VC-800
VC-800
22Oct01
6822
transistor 6822
transistors 6822
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SI7415DN
Abstract: No abstract text available
Text: Si7415DN New Product Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –10 V –5.7 0.110 @ VGS = –4.5 V –4.4 D TrenchFETr Power MOSFET D New PowerPAKt Package – Low Thermal Resistance, RthJC
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Si7415DN
07-mm
S-04881--Rev.
22-Oct-01
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CMOS Single Chip 8-Bit Microcontrollers
Abstract: T83C5121 EEPROM-AT24C128 80C51 ISO7816 PLCC52 R232 SSOP24 T85C5121 T89C5121
Text: 1. Features • 80C51 core • • • • • • • • • • • • • • • • • • – 12 or 6 clocks per instruction X1 and X2 modes – 256 bytes scratchpad RAM – Dual Data Pointer – Two 16-bit timer/counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM
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80C51
16-bit
T83C5121
T85C5121
T89C5121
16Kbytes
CMOS Single Chip 8-Bit Microcontrollers
EEPROM-AT24C128
ISO7816
PLCC52
R232
SSOP24
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Untitled
Abstract: No abstract text available
Text: PHR Vishay Sfernice Very High Precision, Very High Stability Thin Film Chip Resistors FEATURES For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, VISHAY SFERNICE’s precision thin film wraparound
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10ppm/
MIL-PRF-55342G
C/10s
13/CEI
22-Oct-01
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U4793B
Abstract: No abstract text available
Text: U4793B Overload Monitoring with Resistive Load, VT = 44.5 mV Description The bipolar IC U4793B is designed to monitor overload or a short circuit in automotive or industrial applications. The threshold is tied to V4,6 = VS – VT where VT = 44.5 mV. It is independent of the supply voltage, VS.
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U4793B
U4793B
D-74025
22-Oct-01
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capacitor cdm 500
Abstract: VC800A
Text: Product Data Sheet VC-800 Voltage Controlled Crystal Oscillator Features • Worlds Smallest VCXO, 5.0 x 3.2 x 1.5 mm • High Frequencies to 51.84 MHz • 5 or 3.3 V operation • Linearity ≤10% • Tri-State Output • Low jitter < 6ps rms • VCXO with CMOS outputs
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VC-800
VC-800
1-88-VECTRON-1
1-888-FAX-VECTRON
22Oct01,
capacitor cdm 500
VC800A
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO−252 DPAK (T1 METHOD) T H See Note 1 G J See Note 6 E R O D See Note 6 C B A F See Note 1 A M K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2. 2. Camber not to exceed 1 mm in 100 mm.
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O-252
T-01227--Rev.
22-Oct-01
18-Oct-01
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SUB50N04-07T
Abstract: No abstract text available
Text: SPICE Device Model SUB50N04-07T Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUB50N04-07T
22-Oct-01
SUB50N04-07T
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DG3000
Abstract: S0476
Text: DG3000 New Product Vishay Siliconix Low-Voltage Single SPDT MICRO FOOTtAnalog Switch FEATURES BENEFITS APPLICATIONS D MICRO FOOT Chip Scale Package 1.07 x 1.57 mm D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 1.4 W D Fast Switching - tON : 24 ns, tOFF: 9 ns
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DG3000
DG3000
S-04763--Rev.
22-Oct-01
S0476
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Si4866DY
Abstract: No abstract text available
Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Low Output Voltage PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V
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Si4866DY
02-Oct-01
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VC-800
Abstract: No abstract text available
Text: Product Data Sheet VC-800 Voltage Controlled Crystal Oscillator Features • Worlds Smallest VCXO, 5.0 x 3.2 x 1.5 mm • High Frequencies to 51.84 MHz • 5 or 3.3 V operation • Linearity ≤10% • Tri-State Output • Low jitter < 6ps rms • VCXO with CMOS outputs
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VC-800
VC-800
1-88-VECTRON-1
1-888-FAX-VECTRON
22Oct01,
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO−263 D2PAK : 3− AND 5−LEAD See Note 6 Ĭ 1.5 ) 0.1 –0.0 0.30"0.05 See Note 1 2.0"0.1 4.0 A E R 0.3 max 1.0 0.8 (ref) F See Note 6 0.3 B0 W 10.8 K1 K0 A Ĭ 1.50 min 16.0 R 0.5 typ A0 Section A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.
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O-263
T-01227--Rev.
22-Oct-01
90-2342-x
18-Oct-01
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING P RELEASED FOR P U B L I C A T IO N IS UNPUBLISHED. COPYRIGHT ,1 9 LOC ALL RIGHTS RESERVED. BY AMP INCORPORATED. 19 2 3 DIST CE r e v is io n 16 DE SC RI PT IO N LTR REV 4 . 3mm 5TRAIN : PER 0A 00-0290-01 DATE DWN APVD 190CT01 DDE 5B R E L I EF
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190CT01
17105-3b0
22-OCT-01
ampi8159
/home/ampl8169/DMtecmod
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