TO-220CFM
Abstract: TO220CFM
Text: 富鼎先進電子股份有限公司 ADVANCED POWER ELECTRONICS CORP. 產 品 尺 寸 圖 Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 φ L4 MIN NOM MAX A 4.30 4.60 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30
|
Original
|
PDF
|
O-220CFM
QWQAD-7701
TO-220CFM
TO220CFM
|
Untitled
Abstract: No abstract text available
Text: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device
|
Original
|
PDF
|
SSM2761F
O-220FM
O-220CFM
SSM2761
265VAC
|
Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
|
Original
|
PDF
|
2SK2426
O-220CFM
D-85622
Hitachi DSA001651
|
Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
|
Original
|
PDF
|
2SK2423
O-220CFM
D-85622
Hitachi DSA001651
|
Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM
|
Original
|
PDF
|
2SK2114,
2SK2115
O-220CFM
2SK2114
2SK2115
D-85622
Hitachi DSA002749
|
DG12
Abstract: Hitachi DSA002748
Text: 2SK2529 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate
|
Original
|
PDF
|
2SK2529
O-220CFM
D-85622
DG12
Hitachi DSA002748
|
Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2425 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
|
Original
|
PDF
|
2SK2425
O-220CFM
D-85622
Hitachi DSA002780
|
Hitachi DSA002781
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
|
Original
|
PDF
|
2SK2423
O-220CFM
D-85622
Hitachi DSA002781
|
TO220CFM
Abstract: TO-220CFM to 220cfm PRSS0003AE-A
Text: Previous Code TO-220CFM / TO-220CFMV 1.0 ± 0.2 1.15 ± 0.2 0.6 ± 0.1 2.54 φ 3.2 ± 0.2 2.54 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.9g 2.5 ± 0.2 13.6 ± 1.0 RENESAS Code PRSS0003AE-A 12.0 ± 0.3 JEITA Package Code ⎯ 4.1 ± 0.3 Package Name
|
Original
|
PDF
|
O-220CFM
O-220CFMV
PRSS0003AE-A
O-220CFM
TO220CFM
TO-220CFM
to 220cfm
PRSS0003AE-A
|
02n60i
Abstract: No abstract text available
Text: AP02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G 650V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
|
Original
|
PDF
|
AP02N60I-A
O-220CFM
O-220CFM
02N60I
02n60i
|
2sk1153
Abstract: dc-dc converter hitachi HITACHI DIODE 2SK1862 2SK2431 Hitachi DSA00396 HITACHI 2SK* TO-3
Text: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
|
Original
|
PDF
|
2SK2431
O-220CFM
2sk1153
dc-dc converter hitachi
HITACHI DIODE
2SK1862
2SK2431
Hitachi DSA00396
HITACHI 2SK* TO-3
|
Untitled
Abstract: No abstract text available
Text: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS Simple Drive Requirement RDS ON -100V 160m ID Fast Switching Characteristic G D S -12A TO-220CFM(I) Description D Advanced Power MOSFETs from APEC provide the designer
|
Original
|
PDF
|
AP18P10GI
-100V
O-220CFM
O-220CFM
18P10GI
|
AP9575GI
Abstract: No abstract text available
Text: AP9575GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge BVDSS -60V ▼ Simple Drive Requirement RDS ON 70mΩ ▼ Fast Switching Characteristic ID G D S -16A TO-220CFM(I) Description D
|
Original
|
PDF
|
AP9575GI
O-220CFM
AP9575GI
|
PM544
Abstract: ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM
Text: +2 -2 Packing form Non dry pack PRSS0004AC-A TO-220AB, TO-220ABV 50 PRSS0003AD-A TO-220FM, TO-220FMV 50 Non dry pack PRSS0003AE-A TO-220CFM, TO-220CFMV 50 Non dry pack PRSS0004AE-A LDPAK L , LDPAK(L)V 50 Non dry pack PRSS0004AE-B LDPAK(S)-(1), LDPAK(S)-(1)V
|
Original
|
PDF
|
PRSS0004AC-A
O-220FM,
O-220FMV
PRSS0003AE-A
O-220CFM,
O-220CFMV
PRSS0004AE-A
PRSS0004AE-B
PRSS0004AE-C
O-220AB,
PM544
ldpak
PRSS0003AD-A
PRSS0003AE-A
PRSS0004AC-A
PRSS0004AE-A
PRSS0004AE-C
TO220FM
TO220CFM
|
|
|
Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM
|
Original
|
PDF
|
2SK2116,
2SK2117
O-220CFM
2SK2116
2SK2117
D-85622
Hitachi DSA002749
|
Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
|
Original
|
PDF
|
2SK2431
O-220CFM
D-85622
Hitachi DSA002780
|
Hitachi DSA002781
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
|
Original
|
PDF
|
2SK2426
O-220CFM
D-85622
Hitachi DSA002781
|
2SK1157
Abstract: 2SK1158 2SK2116 2SK2117 Hitachi DSA003755
Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate
|
Original
|
PDF
|
2SK2116,
2SK2117
O-220CFM
2SK2116
2SK1157
2SK1158
2SK2116
2SK2117
Hitachi DSA003755
|
Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2425 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
|
Original
|
PDF
|
2SK2425
O-220CFM
D-85622
Hitachi DSA001651
|
HITACHI DIODE
Abstract: 2SK1159 2SK2423 Hitachi DSA00388
Text: 2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
|
Original
|
PDF
|
2SK2423
O-220CFM
HITACHI DIODE
2SK1159
2SK2423
Hitachi DSA00388
|
2SK1155
Abstract: 2SK1156 2SK2114 2SK2115 Hitachi DSA00395
Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate
|
Original
|
PDF
|
2SK2114,
2SK2115
O-220CFM
2SK2114
2SK1155
2SK1156
2SK2114
2SK2115
Hitachi DSA00395
|
h7n0308cf
Abstract: Hitachi DSA00280
Text: H7N0308CF Silicon N Channel MOS FET High Speed Power Switching ADE-208-1570A Z 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220CFM
|
Original
|
PDF
|
H7N0308CF
ADE-208-1570A
O-220CFM
h7n0308cf
Hitachi DSA00280
|
2SK2529
Abstract: DSA0037440
Text: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM
|
Original
|
PDF
|
2SK2529
ADE-208-356F
O-220CFM
2SK2529
DSA0037440
|
Untitled
Abstract: No abstract text available
Text: 2SJ321 Silicon P C h a n n e l M O S F E T Application T0-220CFM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC
|
OCR Scan
|
PDF
|
2SJ321
T0-220CFM
2SJ290
|
