2112B Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
87520-2112BLF		Amphenol Communications Solutions	USB 2.0, Input Output Connector, USB Type A, Standard, Right Angle, Through Hole, Single Decks, 4 Positions

2112B Price and Stock

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Skyworks Solutions Inc SI52112-B5-GM2R IC OSC PCI EXPRESS 2OUT 10TDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI52112-B5-GM2R	Digi-Reel	5,120		1	1 $7.26 10 $4.947 100 $3.6809 1000 $2.9947 10000 $2.9947	Buy Now
	SI52112-B5-GM2R	Cut Tape	5,120		1	1 $7.26 10 $4.947 100 $3.6809 1000 $2.9947 10000 $2.9947	Buy Now
	SI52112-B5-GM2R	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $2.8625	Buy Now
Mouser Electronics	SI52112-B5-GM2R		1,670			1 $6.47 10 $4.35 100 $3.69 1000 $3 10000 $2.86	Buy Now
Richardson RFPD	SI52112-B5-GM2R				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Skyworks Solutions Inc SI52112-B6-GT IC OSC PCI EXPRESS 2OUT 8TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI52112-B6-GT	Tube	2,493		1	1 $6.5 10 $4.466 100 $3.349 1000 $3.325 10000 $3.325	Buy Now
Richardson RFPD	SI52112-B6-GT		1,000		1	1 $5.15 10 $5.15 100 $4.12 1000 $3.51 10000 $3.51	Buy Now
Skyworks Solutions Inc SI52112-B3-GM2 IC OSC PCI EXPRESS 2OUTPUT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI52112-B3-GM2		1,441		1	1 $4.51 10 $3.03 100 $2.2157 1000 $2.05 10000 $2.05	Buy Now
Richardson RFPD	SI52112-B3-GM2				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SI52112-B3-GM2		3,800			1 - 10 - 100 $2.5113 1000 $2.1765 10000 $2.1765	Buy Now
Skyworks Solutions Inc SI52112-B3-GM2R IC OSC PCI EXPRESS 2OUT 10TDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI52112-B3-GM2R	Cut Tape	529		1	1 $5.64 10 $3.788 100 $2.7697 1000 $2.21684 10000 $2.21684	Buy Now
	SI52112-B3-GM2R	Digi-Reel	529		1	1 $5.64 10 $3.788 100 $2.7697 1000 $2.21684 10000 $2.21684	Buy Now
Mouser Electronics	SI52112-B3-GM2R		1,585			1 $4.5 10 $3.31 100 $2.77 1000 $2.31 10000 $2.05	Buy Now
Richardson RFPD	SI52112-B3-GM2R				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Alpha Wire F3211-2-BK105 HEATSHRINK 1/2" X 4' BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	F3211-2-BK105	Bulk	441		1	1 $57.54 10 $43.574 100 $33.8644 1000 $33.8644 10000 $33.8644	Buy Now

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2112B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2112B		Unknown	IC Datasheet (Short Description and Cross Reference Only)		Scan	PDF

2112B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TC58NVG1S3ETA00 Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111 Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
TAG 8926 Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733 Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130	Original	PDF	MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
ata5272 Abstract: 125KHz LF coil antenna for Automotive ATA5791 automotive Immobilizer atmel 545 9241a IMMOBILIZER Antenna Coil immobilizer immobilizer AUTOMOTIVE KEY operation ATA572x Text: Atmel ATA5791 Embedded AVR Microcontroller Including RF Transmitter and Complete LF Functionality for Passive Entry/Passive Start Keys PRELIMINARY SUMMARY DATASHEET Features ● System solution for immobilizer and Passive Entry/Passive Start PEPS functionality	Original	PDF	ATA5791 2112-byte 32-bit 38-pin AES-128 ata5272 125KHz LF coil antenna for Automotive ATA5791 automotive Immobilizer atmel 545 9241a IMMOBILIZER Antenna Coil immobilizer immobilizer AUTOMOTIVE KEY operation ATA572x
TC58NYG0S3E Abstract: TC58NYG0S3ETA00 TC58NYG0S Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	PDF	TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S
KFG2G16Q2A Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
JESD97 Abstract: NAND04G-B2D TSOP48 outline Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage	Original	PDF	NAND16GW3B4D 16-Gbit 2112-byte TSOP48 JESD97 NAND04G-B2D TSOP48 outline
63FBGA Abstract: KFG1G16Q2B onenand Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand
JESD97 Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area	Original	PDF	NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit
48-pin TSOP Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0 Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001	Original	PDF	K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0 48-pin TSOP K9K2G08U0M 48-pin TSOP (I) flash memory samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G16Q0M-Y
Untitled Abstract: No abstract text available Text: Power line chokes Current-compensated D core double chokes 250 V AC, 0.4 … 2.2 A, 3.3 … 100 mH, +40 °C Series/Type: B82732R/W Date: July 2012 a~í~=pÜÉÉí EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures	Original	PDF	B82732R/W B82732R/W B82732R
Untitled Abstract: No abstract text available Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase	Original	PDF	3DFN4G08VS1636 512Mx8 384KM 3DFP-0636-REV
for lpc3180 Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C Text: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev	Original	PDF	UM10198 LPC3180 LPC3180; 16/32-bit LPC3180 UM10198 for lpc3180 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
HY27UF082G2A Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.	Original	PDF	HY27UF 256Mx8bit/128Mx16bit) HY27UF082G2A HY27UF162G2A HY27UF082G2A HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb hynix nand hynix nand spare area
Untitled Abstract: No abstract text available Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■	Original	PDF	NAND02G-B2D 2112-byte/1056-word TSOP48

Samsung Flash K9WAG08U1A Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
A 7800 Abstract: No abstract text available Text: DATASHEET BROCADE 7800 EXTENSION SWITCH DATASHEET BROCADE 7800 EXTENSION SWITCH DATA CENTER THE BROCADE 7800 EXTENSION SWITCH IS AN IDEAL PLATFORM FOR BUILDING OR EXPANDING A HIGH-PERFORMANCE SAN EXTENSION INFRASTRUCTURE FOR DISASTER RECOVERY, DATA PROTECTION, AND DATA MOBILITY STORAGE SOLUTIONS	Original	PDF
Untitled Abstract: No abstract text available Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A)
10072h Abstract: structure chart of samsung company Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,	Original	PDF	MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 10072h structure chart of samsung company
samsung 2GB X16 Nand flash Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue	Original	PDF	K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
Untitled Abstract: No abstract text available Text: Atmel ATA5790N Embedded AVR Microcontroller Including Complete LF Functionality for Passive Entry / Passive Start Keys PRELIMINARY SUMMARY DATASHEET Features System solution for immobilizer and Passive Entry/Passive Start PEPS functionality Optional integrated open source immobilizer software stack supports automotive	Original	PDF	ATA5790N 2112-byte 32-bit 38-pin AES-128
ULGA52 Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications	Original	PDF	NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
K9F1G08U0A-PCB0 Abstract: No abstract text available Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)	Original	PDF	K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0
SLC NAND endurance 100k Abstract: No abstract text available Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0	Original	PDF	KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k
D1801 Abstract: la 1201 sanyo transistor 2SB1201 2112b 2112-B 2SD 2581 2044B 2SB1201 2SD1801 21124- 4 Text: Ordering number: EN 2112B 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications •Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes ■Large current capacity and wide ASO	OCR Scan	PDF	2112B 2SB1201/2SD1801 2SB1201/2SD1801-used 2SB1201 D1801 la 1201 sanyo transistor 2SB1201 2112b 2112-B 2SD 2581 2044B 2SB1201 2SD1801 21124- 4

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2112B Search Results

2112B Result Highlights (1)

2112B Price and Stock

Skyworks Solutions Inc SI52112-B5-GM2R

Skyworks Solutions Inc SI52112-B6-GT

Skyworks Solutions Inc SI52112-B3-GM2

Skyworks Solutions Inc SI52112-B3-GM2R

Alpha Wire F3211-2-BK105

2112B Datasheets (1)

2112B Datasheets Context Search

TC58NVG1S3ETA00

TAG 8926

ata5272

TC58NYG0S3E

KFG2G16Q2A

JESD97

63FBGA

JESD97

48-pin TSOP

Untitled

Untitled

for lpc3180

HY27UF082G2A

Untitled

Samsung Flash K9WAG08U1A

A 7800

Untitled

10072h

samsung 2GB X16 Nand flash

Untitled

ULGA52

K9F1G08U0A-PCB0

SLC NAND endurance 100k

D1801