Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QG
256Mbit
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timing controller SHART
Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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K4U52324QE
512Mbit
32Bit
136Ball
timing controller SHART
T21N
K4U52324Q
SAMSUNG GDDR4
K4U52324QE-BC09
GDDR4
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K4D263238G-VC33
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.7 February 2005 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238G-GC
128Mbit
32Bit
144-Ball
200MHz/
166MHz
K4D263238G-VC2A
K4D263238G-VC33.
K4D263238G-VC33
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M88E1111
Abstract: xcf32pv048 u3843 M88E1111 datasheet vga codec fb0805 SYSTEMACE TQFP144 XCF32P-V048 7a176 DIP41
Text: 4 3 2 1 Power Supply Differential SMA Clocks D 64 bit LVDS Expansion Header GPIO 5V PWR Jack Optional USER Xtal D VGA 3.3V@3A 100MHz Xtal 2.5V@3A AC97 Audio 1.8V@150mA Linear Flash 1.2V@6A IIC EEPROM Linear Flash [email protected] C C Virtex 4 UART CPLD XC95144XL
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100MHz
150mA
XC95144XL
047UF
M88E1111
xcf32pv048
u3843
M88E1111 datasheet
vga codec
fb0805
SYSTEMACE TQFP144
XCF32P-V048
7a176
DIP41
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M88E1111
Abstract: fb0805 DIP41 M88E1111 datasheet xcf32pv048 365R XTAL-SMD m21 sot23 transistor transistor C458 C4751
Text: 4 3 2 1 Power Supply Differential SMA Clocks D 64 bit LVDS Expansion Header GPIO 5V PWR Jack Optional USER Xtal VGA D Switcher 3.3V@6A max 100MHz Xtal Switcher 2.5V@6A max Linear 1.5V@5A max AC97 Audio Linear Flash Linear 1.2V VREF Switcher 1.5V@6A max IIC
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100MHz
XC95144XL
MAX6664,
MAX6663
BSS138N
ML405
M88E1111
fb0805
DIP41
M88E1111 datasheet
xcf32pv048
365R
XTAL-SMD
m21 sot23 transistor
transistor C458
C4751
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K4D263238G-VC33
Abstract: K4D263238G-VC2A K4D263238G-GC33 K4D26323 K4D263238g K4D263238G-GC K4D263238G-GC2A K4D263238G-GC36 K4D263238GVC33 k4d263238gvc2a
Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM Revision 1.8 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4D263238G-GC
128Mbit
144-Ball
K4D263238G-VC33
K4D263238G-VC2A
K4D263238G-GC33
K4D26323
K4D263238g
K4D263238G-GC
K4D263238G-GC2A
K4D263238G-GC36
K4D263238GVC33
k4d263238gvc2a
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Untitled
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 July 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238G-GC
128Mbit
32Bit
144-Ball
K4D26323QG-GC40/45
20tCK)
K4D263238G-GC2A
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k4j52324ki-hc1a
Abstract: K4J52324KI-HC08 K4J52324K K4J52324KI-HC14
Text: Rev. 1.2, Mar. 2010 K4J52324KI 512Mb GDDR3 SGRAM I-die 136 FBGA with Halogen-Free & Lead-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4J52324KI
512Mb
10MAX
k4j52324ki-hc1a
K4J52324KI-HC08
K4J52324K
K4J52324KI-HC14
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DDR2 x32
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR2 x32
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136ball
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QG-BC
256Mbit
136ball
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Untitled
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
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K4J52324Qc
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QC
512Mbit
K4J52324Qc
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K4D26323RA-GC33
Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC2A
20tCK
15tCK
22tCK
K4D26323RA-GC33
GC33
K4D26323AA-GL
K4D26323RA-GC
K4D26323RA-GC36
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DDR RAM 512M
Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR RAM 512M
K4J52324QC-BC14
Hynix Cross Reference
hynix memory h9 ddr2
K4J52324Q
K4J52324QC-BJ12
mark t5n
gddr3
K4J52324QC-BC20
K4J52324QC-A
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HY5RS573225B
Abstract: BA1 K11
Text: HY5RS573225BFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225BFP
8Mx32)
HY5RS573225BFP
550MHz
500MHz
HY5RS573225B
BA1 K11
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Cj721
Abstract: transistor j3003 J3009 j3003 J3005 JS28F256P30T85 11M24 FERRITE-220 J3007 A1818
Text: 4 3 PAGE 6 PAGE 3 System Monitor Aux System Monitor 2 PAGE 2 System Ace Upstream PAGE 2 Upstream Connector 1 PAGE 5 Single Ended Socket Clocks 2X PAGE 5 PAGE 7 Differential SMA Clocks 2X Differential SMA MGT Clocks 2X D D PAGE 12-13 Power Bus and Switches
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FF665
FF665
H-2X19
J3012
J3006
Cj721
transistor j3003
J3009
j3003
J3005
JS28F256P30T85
11M24
FERRITE-220
J3007
A1818
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Untitled
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 August 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238G-GC
128Mbit
32Bit
144-Ball
K4D26323QG-GC40/45
20tCK)
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K4j52324qh-hj1a
Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
Text: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QH
512Mbit
136FBGA
10MAX
K4j52324qh-hj1a
K4J52324QH-HJ08
K4J52324QH
K4J52324QH-HC12
K4J52324Q
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Untitled
Abstract: No abstract text available
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice.
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC2A
20tCK
15tCK
22tCK
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K4J52324QE-BJ1A
Abstract: K4J52324QE-BC14
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QE
512Mbit
K4J52324QE-BJ1A
K4J52324QE-BC14
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K4J55323QI
Abstract: K4J55323QI-BC14 K4J55323QI-BC12 K4J55323
Text: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.3 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QI
256Mbit
K4J55323QI
K4J55323QI-BC14
K4J55323QI-BC12
K4J55323
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SAMSUNG GDDR4
Abstract: K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N 136ball K4U52324QE-BC07 k4u52324qe-bc08
Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.2 May 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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K4U52324QE
512Mbit
32Bit
136Ball
SAMSUNG GDDR4
K4U52324QE
GDDR4
twido
K4U52324QE-BC09
HYNIX charge pump
T21N
K4U52324QE-BC07
k4u52324qe-bc08
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FERRITE-220
Abstract: transistor j3003 ff1136 J3009 j3003 HDR1X12 capacitor 100nf 16v N5 JS28F256P30T85 11n34 E28 ferrite
Text: 4 3 PAGE 6 PAGE 3 System Monitor Aux System Monitor 2 PAGE 2 System Ace Upstream PAGE 2 Upstream Connector 1 PAGE 5 Single Ended Socket Clocks 2X PAGE 5 PAGE 7 Differential SMA Clocks 2X Differential SMA MGT Clocks 2X D D PAGE 16-17 Power Bus and Switches
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FF1136
HDR-1X12
HDR-1X34
FF1136
H-2X19
J3012
J3006
FERRITE-220
transistor j3003
J3009
j3003
HDR1X12
capacitor 100nf 16v N5
JS28F256P30T85
11n34
E28 ferrite
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Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.0 January 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QI
256Mbit
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