IRFH7934TRPBF
Abstract: No abstract text available
Text: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits
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IRFH7934PbF
535mH,
IRFH7934TRPBF
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fta04n60
Abstract: fta*04n60 MOSFET 40A 600V N-Channel 600V MOSFET
Text: FTP04N60/FTA04N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 2.2Ω 4.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP04N60/FTA04N60
FTP04N60
O-220
FTA04N60
O-220F
fta04n60
fta*04n60
MOSFET 40A 600V
N-Channel 600V MOSFET
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mosfet 12V Motor CONTROLER
Abstract: SFS4936
Text: SFS4936 SemiWell Semiconductor Dual N-Channel MOSFET Features • ■ ■ ■ ■ Symbol Low RDS on (0.035Ω )@VGS=10V D2 5 4 G2 Low RDS(on) (0.053Ω )@VGS=4.5V D2 6 3 S2 Gate Charge (Typical 20nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C)
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SFS4936
switcSFS4936
mosfet 12V Motor CONTROLER
SFS4936
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Untitled
Abstract: No abstract text available
Text: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits
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IRFH7934PbF
535mH,
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mosfet 12V Motor CONTROLER
Abstract: SFS4936
Text: SFS4936 SemiWell Semiconductor Dual N-Channel MOSFET Features • ■ ■ ■ ■ Symbol Low RDS on (0.035Ω )@VGS=10V D2 5 4 G2 Low RDS(on) (0.053Ω )@VGS=4.5V D2 6 3 S2 Gate Charge (Typical 20nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C)
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SFS4936
mosfet 12V Motor CONTROLER
SFS4936
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features Description • RDS on = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP8N60ZU
FDPF8N60ZUT
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FQPF6N60
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. • Extended Safe Operating Area
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FQPF6N60
O-220F
FQPF6N60
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Untitled
Abstract: No abstract text available
Text: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l
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IRFH7934PbF
IRFH7934TRPBF
535mH,
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Untitled
Abstract: No abstract text available
Text: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS105KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.
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FQB6N60,
FQI6N60
FQB6N60
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Untitled
Abstract: No abstract text available
Text: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS105KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description • RDS on = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A • Low gate charge ( Typ. 20nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP18N20F
FDPF18N20FT
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. • Extended Safe Operating Area
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FQP6N60
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3
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IRF8734PbF
10irf
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A709
Abstract: b0613 ASTM B633 zinc plating B633 HDP-20 A709A
Text: _ TOA9W6 ~HAOE IÑ THIRO t o ÀftQLE PROJECTION THIS O M M im 15 UNPUBLISHED. C0P1*!«NT 1« 1 RELEASED FOR PUBLICATION *V AMP fWCOWW A T B D . ALL IW TM M TIflNAL MOO ¡3?— m s r 2 BD 39 .73 AfflKTB H O CWMgD. R E V IS IO N S 20NC <M7e KSCRiPTiCN
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R19HT9
177OS
HDP-20
A709
b0613
ASTM B633 zinc plating
B633
HDP-20
A709A
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N71001
Abstract: BDI37
Text: n m HAQg IN THIRD A m LC PROJCCTfON [*Hl£ D R A W I N G 1 5 U N P U B L I S H E D . BY A M P COPYRIGHT 19 INCORPORATED. mar ,19 RELEASED FOR PUBLICATION iiae lesisi 1 BD ¡37 ALL INTERNATIONAL RIGHTS RESERVED. REVISIONS 20NC OAT? oescRiprrek LTR APPO Ott/IC/SB
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08/1C/92
N71001
BDI37
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C0203
Abstract: WG 253 f 20mt AHP13469 C2901 C0701
Text: 4 M A K IN G fM OC IN IN M O W W LC PRO JECTIO N erst LOC THIS DRAWING IS UNPUBLISHED. | RELEASED FOR PUBLICATION ,19 <g COPYRIOffT 18 W AMP INCORPORATED. AU. INTERNATIONAL RIOHTS RfSBMSD. AF 5 0 p F 20NC REVISIONS 0E9CRIFTI0N LTR DATE c REDRAWN PER 0057-93
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AHP13469
US128A
C0203
WG 253
f 20mt
C2901
C0701
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E10-43
Abstract: C0703 of 557
Text: o TH19 0 AMPLE PROJECTfOM QgAMlKC MAflg T H IS DRAWING I S UNPUBLISHED. RELEASED FOR PU 6 LIC A T I0 N BY AMP /NCOftPORATED. CÛPYRIONT fS MOO ,7 9 ALL JWTEHNATrOMAL RIQHTS RESERVED. tic 1 ¿1st 1 BD 3 / R E V IS IO N S P r \ \J 20NC OeSCRJPTlON LT» RED RAW N
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T7I0S-3608
E10-43
C0703
of 557
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.
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FQB6N60,
FQI6N60
D2PAK/TO-263
D2PAK/TO-263
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Untitled
Abstract: No abstract text available
Text: A OPAWIMS m o t IW THIHQ AM Lg TH IS DRAUING pnojscrioM IS UNPUBLISHED. o o p y r is h t RELEASED FOR P U B L IC A T IO N BY II AMP IN O M P M A T IO . A t l. LOC ,1 9 B IS T G INTEM lATIO NAL PID H TS M S f lt v e O . 14 R E V IS IO N S p w LT P 20NC REVISED PEP 0720-0230-93
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2/30/S#
MIL-T-10727
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MIL-T-1072
Abstract: AMP CPC series 2
Text: O DRAWING MAOE IN THIRD ANGLE PROJECTI ON THIS ORAtflNfi IS UNPUBLISHED. co pw j w r 1« 1 RELEASED FOR PUBLICATION •Y AMP NCÛMPÛftATSX A U . ÎKTEHWAfïÛNAL ,1 9 nr- moA . 23 A lfiN TS «SSetVSD. BBT" BD R E V IS IO N S 39 20NC LTR OATC D ESC RIPTIO N
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5-2J-07
MIL-G-45204
QG-N-230.
MIL-T-1072?
MIL-C-74550
20ONTACT
MIL-T-1072
AMP CPC series 2
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108-10033
Abstract: No abstract text available
Text: o ka *., o uw MOO p ia r 80 1 39 R E V IS IO N S * r 20NC LT* V s> E 1 ÛATC K 9 C IU P TJ0 N REDRAWN & REVISED, ECN BD5681 REVISED PER ECN BD606S 1- 92 am « 1 AT 1 AT J 70 . 8 7 ± 0 . 0 8 C. 4 2 8 ± . 0033 TYP t 4 .8 3 J C. 190J TYP > > C A B L E G A T E NO
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BD5681
BD6065
1-3J-92
108-10033
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G1238
Abstract: No abstract text available
Text: * I M U M IM * MMX 1M THIRD AMOLE PMOJCCTION THIS OftAWfWG IS UNPUaLISHEO. COPYRIGHT 19 3 ~ I RELEASED FOR PUBLICATION BY AMP INCORPORATED. M X INTERNATIONAL - 2 V i toe *00 a 13 RJ4MV3 RESERVED. BD 1 I | REVISIONS 37 p \ p 20NC LTR c c s a ttP T io tt
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1471S
oq065S8
G1238
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d 9329
Abstract: r4373
Text: l PROJECTION go, I 1 aetgASgQ FO* PUflLJCATiON •V A HP OATC INCOf^OftArCO. LOC AD 25 ALL ¿MnHNATIONAL ftltMTS MTMÜVKO. APPO S/10/91 L SB LSB 12/90/» L SB S/2/S2 LSB S/28/33 LSB 2/7/94 LSB 3/25/94 LSB o:sr R E V IS IO N S p p LTH 20NC B : C D E • :5>
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M/14/9*
S/28/99
3/2S/94
d 9329
r4373
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