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    20N60CFD Search Results

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    20N60CFD Price and Stock

    Rochester Electronics LLC SPI20N60CFDXKSA1

    N-CHANNEL POWER MOSFET
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    DigiKey SPI20N60CFDXKSA1 Bulk 125
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    Infineon Technologies AG SPI20N60CFDHKSA1

    MOSFET N-CH 650V 20.7A TO262-3
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    DigiKey SPI20N60CFDHKSA1 Tube
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    Infineon Technologies AG SPP20N60CFDHKSA1

    MOSFET N-CH 650V 20.7A TO220-3
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    DigiKey SPP20N60CFDHKSA1 Tube 500
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    Win Source Electronics SPP20N60CFDHKSA1 9,910
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    Infineon Technologies AG SPA20N60CFDXKSA1

    MOSFET N-CH 600V 20.7A TO220-FP
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    DigiKey SPA20N60CFDXKSA1 Tube 500
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    Newark SPA20N60CFDXKSA1 Bulk 1
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    Rochester Electronics SPA20N60CFDXKSA1 113 1
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    EBV Elektronik SPA20N60CFDXKSA1 16 Weeks 500
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    Infineon Technologies AG SPP20N60CFDXKSA1

    MOSFET N-CH 650V 20.7A TO220-3
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    DigiKey SPP20N60CFDXKSA1 Tube 500
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    Mouser Electronics SPP20N60CFDXKSA1 697
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    Rochester Electronics SPP20N60CFDXKSA1 1,995 1
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    EBV Elektronik SPP20N60CFDXKSA1 16 Weeks 500
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    Win Source Electronics SPP20N60CFDXKSA1 9,915
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    Find more 20N60CFD price and stock on Findchips.com

    20N60CFD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Demands for High-efficiency Magnetics in GaN Power Electronics

    Abstract: 20n60cfd TPH3006
    Text: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples


    Original     		PDF 5W/600V 9W/600V Demands for High-efficiency Magnetics in GaN Power Electronics 20n60cfd TPH3006

    D8172

    Abstract: 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220FP SP000216361 20N60CFD D8172 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP

    Untitled

    Abstract: No abstract text available
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP20N60CFD PG-TO220-3-1 20N60CFD PG-TO220-3-1 Q67040-S4616

    20n60cfd

    Abstract: No abstract text available
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd

    20N60CFD

    Abstract: SPW20N60CFD TP001
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD SPW20N60CFD TP001

    20n60cfd

    Abstract: PG-TO-220-3-1 SPP20N60CFD
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP20N60CFD PG-TO220 Q67040-S4616 20N60CFD 20n60cfd PG-TO-220-3-1 SPP20N60CFD

    20N60CFD

    Abstract: 20n60c SPI20N60CFD SPP20N60CFD ultra low idss
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO262 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPI20N60CFD PG-TO262 20N60CFD 20N60CFD 20n60c SPI20N60CFD SPP20N60CFD ultra low idss

    DF 331 TRANSISTOR

    Abstract: d207
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD DF 331 TRANSISTOR d207

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF

    20n60cfd

    Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD 20n60cfd D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207

    d207

    Abstract: 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD d207 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon

    20n60cfd

    Abstract: d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω ID 8.3 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000079613 20N60CFD 20n60cfd d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD

    20N60CFD

    Abstract: No abstract text available
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP20N60CFD PG-TO220-3-1 PG-TO220-3-1 Q67040-S4616 20N60CFD 20N60CFD

    D8172

    Abstract: 20n60cfd 20n60cf D207 F 207 diode
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 W ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD D8172 20n60cfd 20n60cf D207 F 207 diode

    Untitled

    Abstract: No abstract text available
    Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 9 ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    20n60cfd

    Abstract: SPP20N60CFD 20n60c
    Text: 20N60CFD Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP20N60CFD P-TO220-3-1 Q67040-S4616 20N60CFD 20n60cfd SPP20N60CFD 20n60c

    20N60CFD

    Abstract: TP001 SPW20N60CFD 20n60c 207a Q67040-S4617
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD TP001 SPW20N60CFD 20n60c 207a Q67040-S4617

    20n60cfd

    Abstract: No abstract text available
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd

    20n60cfd

    Abstract: No abstract text available
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP20N60CFD PG-TO220-3-1 20N60CFD PG-TO220-3-1 Q67040-S4616 20n60cfd

    20n60cfd

    Abstract: SPW20N60CFD
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 009-134-A 20n60cfd SPW20N60CFD

    20n60cfd

    Abstract: spp20N60CFD 20n60cf PG-TO-220-3-1 Q67040-S4616
    Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP20N60CFD PG-TO220 Q67040-S4616 20N60CFD 20n60cfd spp20N60CFD 20n60cf PG-TO-220-3-1 Q67040-S4616