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    2067A Search Results

    2067A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TPS62067AQDSGRQ1 Texas Instruments Automotive 3-MHz 2-A step-down converter in 2x2 SON package 8-WSON -40 to 125 Visit Texas Instruments
    SF Impression Pixel

    2067A Price and Stock

    Kyocera AVX Components 12067A271GAT2A

    CAP CER 270PF 500V C0G/NP0 1206
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    DigiKey 12067A271GAT2A Cut Tape 13,925 1
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    12067A271GAT2A Digi-Reel 13,925 1
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    12067A271GAT2A Reel 8,000 4,000
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    Kyocera AVX Components 12067A6R8BAT2A

    CAP CER 6.8PF 500V C0G/NP0 1206
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    DigiKey 12067A6R8BAT2A Cut Tape 7,980 1
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    12067A6R8BAT2A Digi-Reel 7,980 1
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    12067A6R8BAT2A Reel 4,000 4,000
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    Kyocera AVX Components 12067A221GAT2A

    CAP CER 220PF 500V C0G/NP0 1206
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    DigiKey 12067A221GAT2A Digi-Reel 6,975 1
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    12067A221GAT2A Cut Tape 6,975 1
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    12067A221GAT2A Reel 4,000 4,000
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    Avnet Americas 12067A221GAT2A Reel 12 Weeks 4,000
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    Newark 12067A221GAT2A Reel 4,000
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    Avnet Abacus 12067A221GAT2A Reel 14 Weeks 2,000
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    Kyocera AVX Components 12067A1R8BAT2A

    CAP CER 1.8PF 500V C0G/NP0 1206
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    DigiKey 12067A1R8BAT2A Digi-Reel 3,893 1
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    12067A1R8BAT2A Cut Tape 3,893 1
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    Kyocera AVX Components 12067A820GAT2A

    CAP CER 82PF 500V C0G/NP0 1206
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    DigiKey 12067A820GAT2A Cut Tape 3,577 1
    • 1 $1.37
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    2067A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Filename: tfs 2067a.doc Version 1.4 VI TELEFILTER Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 27.02.2007 Filter specification 23 TFS 2067A 1/5 °C dBm 50 50 Characteristics Remark: The reference level for the relative attenuation arel of the TFS 2067A is the maximum attenuation in the pass band. The maximum attenuation in the pass


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    PDF 2067a

    Untitled

    Abstract: No abstract text available
    Text: IRAM256-2067A Series 20A, 600V Integrated Power Module for Appliance Motor Drive Applications Description International Rectifier's IRAM256-2067A is a 20A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.


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    PDF IRAM256-2067A IRAM256-2067A AN-1049 IRAM256-2067A2

    N1C1

    Abstract: No abstract text available
    Text: Telecommunication ADSL Transfor mer Transformers DT32-2048AS DT32-2061AS DT32-2067AS DT32-2005AS DT32-20XXXX XXXX : DATE CODE WHITE DOT ON PIN1 DELTAXXXX 10 1 N1 PRI A N3 8 3 9 2 N2 B 0.3 N4 4 7 3 0.4x0.7 TIN PLATED PHOSPHOR BRONZE D 10 5 6 6 10 4 6 1 N3


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    PDF DT32-2048AS DT32-2061AS DT32-2067AS DT32-2005AS DT32-20XXXX DT32-2084AS 100KHz N1C1

    smd MP1 AN

    Abstract: No abstract text available
    Text: DEMO MANUAL 2067A LT8710 Synchronous Inverting DC/DC Converter DESCRIPTION Demonstration circuit 2067A is a synchronous inverting converter CUK topology featuring the LT 8710 switching controller. It regulates a –5V, 6A output from a 4.5V to 28V input source, and operates at 300kHz switching frequency.


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    PDF DC2067A LT8710 300kHz LT8710 DC2067 DC2067A dc2067af smd MP1 AN

    DT32-2005AT

    Abstract: DT32-2013T DT32-2061AT DT32-2067AT
    Text: Telecommunication ADSL Transfor mer Transformers DT32-2061AT DT32-2067AT DT32-2005AT DT32-2013T 9 N1 DT32-20XXXX XXXX : DATE CODE WHITE DOT ON PIN1 DELTAXXXX 3 7 PRI N3 8 SEC 4 N2 6 A 3 10 B 1 N1 10 9 7 6 8 9 5 PRI TINNED CP WIRE 2 SEC N4 7 7 6 4 4 10 PRI


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    PDF DT32-2061AT DT32-2067AT DT32-2005AT DT32-2013T DT32-20XXXX DT32-2061A------------ -80dB 100KHz -75dB DT32-2005AT DT32-2013T DT32-2061AT DT32-2067AT

    BD NPN transistors

    Abstract: 2SC5245 FC157
    Text: Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


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    PDF EN5433 FC157 FC157 2SC5245, FC157] BD NPN transistors 2SC5245

    2SC5245

    Abstract: FC157
    Text: Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


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    PDF EN5433 FC157 FC157 2SC5245, FC157] 2SC5245

    2SC3859

    Abstract: D059 FC128 ITR10521 ITR10522 ITR10523 ITR10524
    Text: 注文コード No. N 3 2 8 2 FC128 No. N 3 2 8 2 70500 FC128 特長 NPN エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗内蔵(R1=10kΩ) 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC128 FC128 2SC3859 ITR10521 ITR10522 ITR10523 ITR10524 2SC3859 D059 ITR10521 ITR10522 ITR10523 ITR10524

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3964 FC149 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


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    PDF EN3964 FC149 FC149 2SA1813, FC149]

    2SA1508

    Abstract: D059 FC123 ITR10501 ITR10502 ITR10503 ITR10504
    Text: 注文コード No. N 3 2 7 7 FC123 No. N3277 71000 FC123 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗内蔵(R1=47kΩ) 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC123 N3277 FC123 2SA1508 ITR10502 ITR10501 ITR10503 ITR10504 2SA1508 D059 ITR10501 ITR10502 ITR10503 ITR10504

    2SA1496

    Abstract: D059 FC127 ITR10517 ITR10518 ITR10519 ITR10520
    Text: 注文コード No. N 3 2 8 1 FC127 No. N 3 2 8 1 71000 FC127 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗内蔵(R1=10kΩ) 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC127 FC127 2SA1496 ITR10517 ITR10518 ITR10519 ITR10520 2SA1496 D059 ITR10517 ITR10518 ITR10519 ITR10520

    FC124

    Abstract: 2SC3898 D059 ITR10505 ITR10506 ITR10507 ITR10508
    Text: 注文コード No. N 3 2 7 8 FC124 No. N3278 71000 FC124 特長 NPN エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗内蔵(R1=47kΩ) 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC124 N3278 FC124 2SC3898 ITR10506 ITR10505 ITR10507 ITR10508 2SC3898 D059 ITR10505 ITR10506 ITR10507 ITR10508

    2SA1563

    Abstract: D059 FC131 ITR10533 ITR10534 ITR10535 ITR10536
    Text: 注文コード No. N 3 2 8 5 FC131 No. N 3 2 8 5 72500 FC131 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗内蔵(R1=10kΩ, R2=47kΩ) 。


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    PDF FC131 FC131 2SA1563 ITR10534 ITR10533 ITR10535 ITR10536 2SA1563 D059 ITR10533 ITR10534 ITR10535 ITR10536

    IC 4069

    Abstract: 2SC4577 FC118 ITR10442 ITR10443 ITR10444 ITR10445 ITR10446 ITR10447 ITR10448
    Text: 注文コード No. N 3 1 1 6 FC118 No. N3116 70500 * 半導体ニューズ No.2069 とさしかえてください。 FC118 特長 NPN エピタキシァルプレーナ形シリコン複合トランジスタ 低周波一般増幅用 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅に向上できる。


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    PDF FC118 N3116 FC118 2SC4577 400mA 95200mA, ITR10445 ITR10447 IC 4069 2SC4577 ITR10442 ITR10443 ITR10444 ITR10445 ITR10446 ITR10447 ITR10448

    marking 149

    Abstract: 2SA1813 FC149
    Text: Ordering number:EN3964 FC149 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


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    PDF EN3964 FC149 FC149 2SA1813, VEBO15V) FC149] marking 149 2SA1813

    2SA1342

    Abstract: D2000 FC109 ITR10402 ITR10403 ITR10404 ITR10405
    Text: 注文コード No. N 3 0 7 7 FC109 No. N3077 D2000 FC109 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗 R1=22kΩ, R2=22kΩ を内蔵。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC109 N3077 D2000 FC109 2SA1342 ITR10403 ITR10402 ITR10404 ITR10405 2SA1342 D2000 ITR10402 ITR10403 ITR10404 ITR10405

    FC135

    Abstract: 046b1 2SA1510 D059 ITR10549 ITR10550 ITR10551 ITR10552 FC-135
    Text: 注文コード No. N 3 2 8 9 FC135 No. N 3 2 8 9 72500 FC135 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗内蔵(R1=4.7kΩ) 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC135 FC135 2SA1510 ITR10550 ITR10549 ITR10551 ITR10552 046b1 2SA1510 D059 ITR10549 ITR10550 ITR10551 ITR10552 FC-135

    2SA1753

    Abstract: FC117 ITR10434 ITR10435 ITR10436 ITR10437 ITR10438 ITR10439 ITR10440 ITR10441
    Text: 注文コード No. N 3 1 1 5 A FC117 No. N 3 1 1 5 A 70500 半導体ニューズ No.3115 とさしかえてください。 FC117 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ 低周波一般増幅用 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅に向上できる。


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    PDF FC117 FC117 2SA1753 400mA ITR10438 ITR10439 ITR10440 ITR10441 2SA1753 ITR10434 ITR10435 ITR10436 ITR10437 ITR10438 ITR10439 ITR10440 ITR10441

    2SC3396

    Abstract: D2000 FC110 ITR10406 ITR10407 ITR10408 ITR10409
    Text: 注文コード No. N 3 0 7 8 FC110 No. N3078 D2000 FC110 特長 NPN エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用(バイアス抵抗内蔵) ・バイアス抵抗 R1=22kΩ, R2=22kΩ を内蔵。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。


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    PDF FC110 N3078 D2000 FC110 2SC3396 ITR10407 ITR10406 ITR10408 ITR10409 2SC3396 D2000 ITR10406 ITR10407 ITR10408 ITR10409

    Untitled

    Abstract: No abstract text available
    Text: D R A W IN G HUNGER sm soom m r e * r o ft 3 n Q 3 R ft o u s o o o RE V ISIO N n ? SHEET BEVISIOSE VC Foetto | / | APPROVAL L E V E L 1/ 1 nv. DtmsmiosE - STRICTLY CONFIDENTIAL ll RXX 1J L. — g mil d - -H - >PBT GF10< ±0.15 tsi 15 .8±0*3 . D D 4 1 . 9dfc0.3


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: E N 3964 FC149 No.3964 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications F eatures •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


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    PDF FC149 2SA1813, 53094TH FC149

    CQ 523

    Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523
    Text: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the


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    PDF EN5433 FC157 FC157 2SC5245, CQ 523 cq 531 mc 5357 Z0 607 2SC5245 s22L transistor but 607 cq 765 NPN/CQ 523

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


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    PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3964 FC149 No.3964 PN P E pitaxial P la n ar Silicon Composite T ransistor Low-Frequency General-Purpose Amp, Driver Applications F e a tu re s • Composite type with 2 tran sisto rs contained in the CP package c u rre n tly in use, im proving the


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    PDF EN3964 FC149 FC149 2SA1813,