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Catalog Datasheet	MFG & Type	PDF	Document Tags
FLW122 Abstract: ultrasonic flowmeter sensor JEMIS-032 ultrasonic flow meter FLW410 ultrasonic flowmeter flowmeter FLD22 RG58A/U flowmeter ultrasonics Text: SERIES ULTRASONIC FLOWMETER < S Standard Type > FLV•··3, FLW···2, FLD···1 DATA SHEET This flowmeter is a clamp-on type ultrasonic flowmeter based on transit-time measuring method. Thanks to mi croprocessor based electronics, the flowmeter can be easily	Original	PDF	6000mm 32bit FLW12) 250VAC/250VDC EN50014 FLW122 ultrasonic flowmeter sensor JEMIS-032 ultrasonic flow meter FLW410 ultrasonic flowmeter flowmeter FLD22 RG58A/U flowmeter ultrasonics
2SD2155 Abstract: 2SB1429 55NO Text: 2SB1429 * < 4 • mm 205MAX. • « it m -r r , • 2 S D 2 1 5 5 ¿ 3 ' y - f > > y 9 'J K .t£ * l i * » • 100W : vC EO - - i 8 o v a * * ) 7 r A * - 7 r .f * T iX S tt (T.-2S1C ) a C o a w ? * • < - M * i£ «Í ff * «L * vCBO -180 V VCEO -180	OCR Scan	PDF	2SB1429 2SD2155 Tc-25t 20SUAX. 55-no. 2SD2155 2SB1429 55NO
2sa1553 Abstract: TOSHIBA 2SA1553 Text: TOSHIBA Discrete Semiconductors 2SA1553 Transistor Unit in mm 205MAX Silicon PNP Epitaxial Type PCT Process #3-3 ±0.2 For General Purpose Switching and Amplifier Applications Features • Complementary to 2SC4029 • Recommended for 120W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SA1553 205MAX 2SC4029 00215b0 2sa1553 TOSHIBA 2SA1553
2SB 545 Abstract: No abstract text available Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Amplifier Com plem entary Pair with 2SD1975 Package Dim ensions • Features ■ • Very good linearity of DC current gain • Wide area of safety operation ASO • High transition frequency (fT)	OCR Scan	PDF	2SB1317 2SD1975 20-5max. Q01b2t13 2SB 545
2SB1317 Abstract: 2SD1975 Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)	OCR Scan	PDF	2SB1317 2SD1975 20-5max. 2SB1317 2SD1975
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : \|Yfg\| = 5.0S Typ. Complementary to 2SK1530	OCR Scan	PDF	2SJ201 20-5MAX. --200V 2SK1530
2SC3307 Abstract: 2-21F1A Text: TOSHIBA 2SC3307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3307 HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times	OCR Scan	PDF	2SC3307 -55hich 2SC3307 2-21F1A
Untitled Abstract: No abstract text available Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • M A X IM U M RATINGS Ta = 25°C CARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current	OCR Scan	PDF	GT60M302 20-5MAX. 22//s