FLW122
Abstract: ultrasonic flowmeter sensor JEMIS-032 ultrasonic flow meter FLW410 ultrasonic flowmeter flowmeter FLD22 RG58A/U flowmeter ultrasonics
Text: SERIES ULTRASONIC FLOWMETER < S Standard Type > FLV•··3, FLW···2, FLD···1 DATA SHEET This flowmeter is a clamp-on type ultrasonic flowmeter based on transit-time measuring method. Thanks to mi croprocessor based electronics, the flowmeter can be easily
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6000mm
32bit
FLW12)
250VAC/250VDC
EN50014
FLW122
ultrasonic flowmeter sensor
JEMIS-032
ultrasonic flow meter
FLW410
ultrasonic flowmeter
flowmeter
FLD22
RG58A/U
flowmeter ultrasonics
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2SD2155
Abstract: 2SB1429 55NO
Text: 2SB1429 * < 4 • mm 205MAX. • « it m -r r , • 2 S D 2 1 5 5 ¿ 3 ' y - f > > y 9 'J K .t£ * l i * » • 100W : vC EO - - i 8 o v a * * ) 7 r A * - 7 r .f * T iX S tt (T.-2S1C ) a C o a w ? * • *< - * M * i£ «Í ff * «L * vCBO -180 V VCEO -180
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2SB1429
2SD2155
Tc-25t
20SUAX.
55-no.
2SD2155
2SB1429
55NO
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2sa1553
Abstract: TOSHIBA 2SA1553
Text: TOSHIBA Discrete Semiconductors 2SA1553 Transistor Unit in mm 205MAX Silicon PNP Epitaxial Type PCT Process #3-3 ±0.2 For General Purpose Switching and Amplifier Applications Features • Complementary to 2SC4029 • Recommended for 120W High Fidelity Audio Frequency Amplifier
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2SA1553
205MAX
2SC4029
00215b0
2sa1553
TOSHIBA 2SA1553
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2SB 545
Abstract: No abstract text available
Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Amplifier Com plem entary Pair with 2SD1975 Package Dim ensions • Features ■ • Very good linearity of DC current gain • Wide area of safety operation ASO • High transition frequency (fT)
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2SB1317
2SD1975
20-5max.
Q01b2t13
2SB 545
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2SB1317
Abstract: 2SD1975
Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)
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2SB1317
2SD1975
20-5max.
2SB1317
2SD1975
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530
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2SJ201
20-5MAX.
--200V
2SK1530
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2SC3307
Abstract: 2-21F1A
Text: TOSHIBA 2SC3307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3307 HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times
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2SC3307
-55hich
2SC3307
2-21F1A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • M A X IM U M RATINGS Ta = 25°C CARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current
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GT60M302
20-5MAX.
22//s
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