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a6628 Abstract: A-6628 cewe DIP32 MSM548512L Text: お客様各位資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコンダクタ株式会社に承継されました。従いまして、本資料中には「沖電気工業株	Original	PDF	J2L0044-17-Y1 MSM548512L MSM548512L 288-Word MSM548512L2048 84MSRAMCMOS 250mW 500mW 160ns a6628 A-6628 cewe DIP32
a6628 Abstract: SOP-112 DIP32 MSM548512L DIP32P Text: J2L0044-17-Y1 作成：1998年 1月 MSM548512L l 前回作成：1997年 9月 ¡ 電子デバイス MSM548512L 524,288-Wordx8-Bit PSRAM n 概要プロセスを	Original	PDF	J2L0044-17-Y1 MSM548512L MSM548512L 288-Word MSM548512L2048 84MSRAMCMOS 250mW 500mW 160ns a6628 SOP-112 DIP32 DIP32P
Untitled Abstract: No abstract text available Text: TC518512FL 1/2 IL00 * C-MOS 524,288WORDX8 BIT STATIC RAM -TOP VIEW12 A18 IN 1 VDD(+5V) 32 11 10 A16 31 A15 IN 2 IN 9 8 30 A17 IN A14 IN 3 7 6 A12 IN 4 29 R/W A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 IN 7 26 A9 IN 28 A4 IN 8 25 A11 IN 31 4	Original	PDF	TC518512FL 288WORDX8 VIEW12 A0-A18 A11-A18 256X8 A0-A10 2048X256X8
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7	OCR Scan	PDF	TC55V040FT/TR-85 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 20adl
TC518512 Abstract: LT/SG3527A Text: TOSHIBA T C 5 1 8 5 1 2 P iy F L /F T L A R L - 7 0 L 'I /8 0 ( L T ) /1 0 q _ ,'I) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 5 2 4,28 8 w o rd s by 8 bits. The T C 5 1 85 12P L utilizes	OCR Scan	PDF	D-173 TC518512PL/FL/FTL/TRL-70 D-174 TC518512 LT/SG3527A
TC518512FTL Abstract: TC518512 TC518512PL Text: TOSHIBA T C 5 1 8 5 1 2 P I7 F L / F T L / T R L r 7 0 / 8 0 / 1 0 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes	OCR Scan	PDF	TC518512PL TC518512PL/FL/FTL/TRL-70/80/10 D-166 TC518512FTL TC518512
TC518512 Abstract: transistor D195 Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er	OCR Scan	PDF	TC518512PL/FL/FTL/rRL-70LV/80LV/10LV TheTC518512PL TC518512PL TC518512PL-LV D-194 TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV D-195 TC518512 transistor D195
TC518512FTL-70 Abstract: No abstract text available Text: 5 2 4 ,2 8 8 W O R D S x 8 8 IT CMOS PSEUDO S T A T IC RAM PRELIMINARY D E S C R IP T IO N T he T C 5 1 8 5 1 2 P L F am ily is a 4M b it high speed CM OS Pseudo S tatic RAM organized as 5 2 4 ,2 8 8 words by 8 bits. T he T C 5 1 8 5 1 2 P L F am ily u tilizin g one transistor dynamic memory cell with CM OS	OCR Scan	PDF	TC518512PL TC518512PL/FL/FTUTRLâ TC518512FTL-70, 35MAX TC518512TRL TC518512FTL-70