200v 3A IGBT
Abstract: No abstract text available
Text: N-CHANNEL IGBT SGP6N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGP6N60UFD
O-220
200v 3A IGBT
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SGW6N60UFD
Abstract: No abstract text available
Text: N-CHANNEL IGBT SGW6N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGW6N60UFD
SGW6N60UFD
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200v 3A ultra fast recovery diode
Abstract: SGP6N60UFD SGP6N60
Text: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGP6N60UFD
O-220
SGP6N60UFD
200v 3A ultra fast recovery diode
SGP6N60
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200v 3A ultra fast recovery diode
Abstract: SGP6N60UFD
Text: IGBT SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP6N60UFD
O-220
200v 3A ultra fast recovery diode
SGP6N60UFD
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Q67040-S4340
Abstract: SKA06N60
Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Aug-00
Q67040-S4340
SKA06N60
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SGW6N60UFD
Abstract: No abstract text available
Text: IGBT SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGW6N60UFD
SGW6N60UFD
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FAST RECOVERY DIODE 200ns 8A 40V
Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Apr-00
FAST RECOVERY DIODE 200ns 8A 40V
6A, 100v fast recovery diode
Q67040-S4340
SKA06N60
200v 1.5v 3a diode
400v 3a low vf diode
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SGW6N60UFD
Abstract: No abstract text available
Text: SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGW6N60UFD
SGW6N60UFD
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SGS6N60UFD
Abstract: No abstract text available
Text: IGBT SGS6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGS6N60UFD
O-220F
SGS6N60UFD
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SGP6N60UFD
Abstract: No abstract text available
Text: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGP6N60UFD
O-220
95MAX.
54TYP
SGP6N60UFD
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Untitled
Abstract: No abstract text available
Text: SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGW6N60UFD
SGW6N60UFD
SGW6N60UFDTM
O-263
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Untitled
Abstract: No abstract text available
Text: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGP6N60UFD
O-220
SGP6N60UFD
SGP6N60UFDTU
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Untitled
Abstract: No abstract text available
Text: IGBT SGS6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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SGS6N60UFD
O-220F
SGS6N60UFD
SGS6N60UFDTU
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g6n50e
Abstract: HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S G6N40E G6N50
Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage
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HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTD6N50E1
O-251AA
O-252AA
g6n50e
HGTD6N40E1
HGTD6N40E1S
HGTD6N50E1
HGTD6N50E1S
G6N40E
G6N50
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K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
K06N60
fast recovery diode 2a trr 200ns
PG-TO-220-3-1
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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G6N50E1D
Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
Text: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance
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HGTP6N40E1D,
HGTP6N50E1D
O-220AB
150oC.
150oC
100oC
-50oC
G6N50E1D
hGtp6N50E1D
G6N50E1
G6N50
HGTP6N40E1D
G6N50E
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K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-220-3-45
K06N60
SKB02N60
200v 1.5v 3a diode
400v 3a low vf diode
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
SKB02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
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g6n50e
Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR
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HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTD6N50E1
O-251AA
O-252AA
g6n50e
G6N50
HGTD6N40E1
HGTD6N40E1S
HGTD6N50E1
HGTD6N50E1S
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fast recovery diode 2a trr 200ns
Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
fast recovery diode 2a trr 200ns
fast recovery diode 1a trr 200ns
K06N60
Q67040-S4214
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diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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