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    Untitled

    Abstract: No abstract text available
    Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 180ns KM418C256LL

    KMM366F400BK

    Abstract: No abstract text available
    Text: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM366F400BK KMM366F410BK 4Mx64 KMM366F40 300mil 168-pin 110ns KMM366F400BK

    ax292

    Abstract: 50hz pure sine oscillator Butterworth
    Text: ?9-45£S;A*v2.&9S _ General Description The MAX291/MAX292/MAX295/MAX296 are easy-to-use, 8th-order. low-pass, switched-capacitor filters that can be set up with corner frequencies from 0.1 Hz to 25kHz MAX291/MAX292 or 0.1 Hz to 50kHz (MAX295/MAX296).


    OCR Scan     		PDF MAX291/MAX292/MAX295/MAX296 25kHz MAX291/MAX292) 50kHz MAX295/MAX296) MAX291/MAX295 MAX292/MAX296 MAX291 MAX292 MAX295 ax292 50hz pure sine oscillator Butterworth

    200jjs

    Abstract: No abstract text available
    Text: CELESTICA 2M x 64 FPM BUFFERED DIMM FEATURES • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 C, Fig. 4-13A, B, C, D, F Release 4 : No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3 ± 0.3V power supply


    OCR Scan     		PDF 168-pin MO-161 20432C) 16160C 200jjs

    Untitled

    Abstract: No abstract text available
    Text: 1M x 64 FPM UNBUFFERED DIMM CELESTICA FEATURES • • • • • • • • 168-pin industry standard 8-byte 8-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 5.0V ± 10% power supply TTL-compatible inputs and outputs


    OCR Scan     		PDF 168-pin MO-161 20432C) 16139C

    celestica

    Abstract: No abstract text available
    Text: CELESTICA 4M x 72 ECC EDO BUFFERED DIMM FEATURES • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 -C, Fig. 4-13A, B, C, D, P Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS


    OCR Scan     		PDF 168-pin MO-161 20431C) 14457C celestica

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TlbHlMS 00132^3 44b »SflGK KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fasi Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC I rc 70ns 20ns 130ns KM44C1010A-8 80ns 20ns


    OCR Scan     		PDF KM44C1010A 130ns KM44C1010A-8 150ns KM44C1010A-10 100ns 180ns KM44C1010A-7 KM44C1010A

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 4M x 72 ECC EDO BUFFERED DIMM FEATURES • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, P Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS


    OCR Scan     		PDF 168-pin MO-161 20431C) 14459C

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns

    EN61000-4-2

    Abstract: EN61000-4-3 EN61000-4-6 EXB50 EXB50-48S05
    Text: T ARTESSrN C/n * E C H N O L O I* G I E EXB50 SERIES S Single output • High efficiency topology, 91% typical on EXB50-48S05 • Industry standard footprint • Wide operating temperature -40°C to +70°C natural convection • 60% to 110% output trim • No minimum load


    OCR Scan     		PDF EXB50-48S05 EXB50 EN61000-4-2 EN61000-4-3 EN61000-4-6 EXB50-48S05

    4th order butterworth 50hz

    Abstract: MAX291 MAX291CWE 50hz pure sine oscillator 300F0
    Text: 19-4526: Rev 2: 6/96 8th-Order, Lowpass, Sw itched-Capacitor Filters The M AX291/MAX295 Butterworth filters provide m axi­ mally flat passband response, and the MAX292/MAX296 Bessel filters provide low overshoot and fast settling. All four filters have fixed responses, so the design task is


    OCR Scan     		PDF MAX291 /MAX292/MAX295/MAX296 25kHz MAX291/MAX292) 50kHz MAX295/MAX296) MAX291/MAX295 MAX292/MAX296 MIL-STD-883. MAX29_ 4th order butterworth 50hz MAX291CWE 50hz pure sine oscillator 300F0

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 4M x 72 ECC FPM UNBUFFERED DIMM FEATURES • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: Preliminary Ballot 744.1 : No. 95 MO-161 High performance, CMOS Single 5.0V ± 10% power supply TTL-compatible inputs and outputs


    OCR Scan     		PDF 168-pin MO-161 20432C) 14477C

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 1M x 32 EDO SIMM FEATURES • • • • • • • • • 72-pin industry standard 4-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-18 A,B, Fig. 4-6 Release 6 No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS


    OCR Scan     		PDF 72-pin MO-116 20431C) 14504C

    APEX MICRO

    Abstract: No abstract text available
    Text: 0 5 7 fiti3 ti S bE DDOlSHa OPEX 7^4 •AUT APEX MICROTECHNOLOGY CORP 2 0 WATT DC-DC CONVERTER AP EX M IC R O T E C H N O L O G Y C O R P O R A TIO N « T U C S O N . A R IZ O N A • A P P L IC A T IO N S H O TLIN E 8 0 0 4 2 1 - 1 8 6 5 r -rr-ii HI-REL DESIGN


    OCR Scan     		PDF DB2805S 127mm 051mm 254mm 127mm DB2805SU APEX MICRO

    Untitled

    Abstract: No abstract text available
    Text: System Reset with built-in watchdog timer MM1145 MITSUMI System Reset (with built-in mratcliciog timer) Monolithic IC MM1145 This IC has a built-in watchdog timer, with 2 channels for a clock monitoring function that monitors the microcomputer and outputs an intermittent reset signal if the microcomputer runs wild. Also, it has a power


    OCR Scan     		PDF MM1145

    LF440

    Abstract: No abstract text available
    Text: 19-0192: Rev 1:11/93 H i g h - E f f i c i e n c y , PWM, S t e p - D o w n , N - C h a n n e l DC-DC C o n t r o l l e r _ G e n e r a l Features Description The MAX746 is a high-efficiency, high-current, step-down DC-DC power-supply controller that drives external N-channel FETs. It provides 93% to 96% efficiency from a 6Vsupply


    OCR Scan     		PDF MAX746 LF440

    Untitled

    Abstract: No abstract text available
    Text: KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C4000ASL 41C4000ASL KM41C4000ASL 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 1M x 64 FPM BUFFERED DIMM FEATURES • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, G Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3V ± 0.3V power supply


    OCR Scan     		PDF 168-pin MO-161 20432C) 14435C

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 2M x 64 EDO BUFFERED DIMM FEATURES • • 168-pin industry standard 8-byte dual-in-tine memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, l Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 5.0V ± 10% power supply


    OCR Scan     		PDF 168-pin MO-161 20431C) 14440C

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1000AL 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1000AL 130ns 1000AL- 150ns 20-LEAD

    transistor SMD 1p4

    Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
    Text: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab


    OCR Scan     		PDF TQ-220AB C67078-A5007-A2 Q67060-S6202-A2 E3043 Q67060-S6202-A4 GPT05165 O-22QAB/5, E3062 BTS432E2 E3062A transistor SMD 1p4 KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A

    634BI4

    Abstract: 634AI5 Diode SOT-23 marking Jf 634A5 LM385 1.25V zener
    Text: a run TECH! TECHNOLOGY LT1634 Micropower Precision Shunt Voltage Reference K fffU R C S D € S C iI P T I O i • Initial Voltage Accuracy: 0.05% ■ Low Operating Current: 10uA ■ Low Drift: 10ppm/°C Max ■ Less Than 1Q Dynamic Impedance ■ Available in 1,25V, 2.5V, 4.096V and 5V in SO-8


    OCR Scan     		PDF LT1634 10ppm/ 10jaA LM185/LM3ER LTC1440 LT1460 LT1495 634BI4 634AI5 Diode SOT-23 marking Jf 634A5 LM385 1.25V zener